Patent US5814880A successfully refreshed from Google Patents.
US5814880A
Expired / Lapsed
US
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Thick film copper metallization for microwave power transistor packages
Assignee: Northrop Grumman Corp
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Filing: 1993-01-29
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Granted: 1998-09-29
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Expires: 2013-01-29
Abstract
Abstract A heat dissipating module and package for power microwave transistors and method of making same that includes a substrate having a thick copper layer bonded to a ceramic core which is thereto subjected to high processing temperatures.
Inventors
- 👤 John A. Costello
- 👤 Harry Buhay
- 👤 Richard R. Papania
- 👤 Prosenjit Rai-Choudhury
- 👤 Kenneth J. Petrosky
- 👤 Gene A. Madia
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 15:46
CPC Classifications
H; H10; H10W; H10W40/00; H10W40/20; H10W40/25; H10W40/255; H10W72/00; H10W72/30; H10W76/00; H10W76/10; H10W76/12; H10W76/15; H10W76/157; H10W90/00; H10W72/071; H10W72/073; H10W72/07331; H10W72/07337; H10W72/351; H10W72/352
Claims Analysis
Total Claims: 50
Claim 1
Independent Claim
332 words
A power microwave generating transistor module, comprising: a thermally conductive metallic plate for supporting a plurality of electronic components; a plurality of spaced inductive, capacitive, and resistive components mounted on the metallic plate; a plurality of power microwave transistor packages spaced from the inductive, capacitive, and resistive components, and from each other mounted on the metallic plate; the plurality of components, and the transistors of the transistor packages being interconnected electrically to produce an alternating output signal of a predetermined wattage, each transistor package including: a metallic base member fixedly attached to and in physical engagement with the metallic plate for conducting heat from the base member to the metallic plate, a substrate having a ceramic core with first and second opposite planar surfaces, each of the planar surfaces having a layer of copper with a thickness in the range of approximately 0.5 to 7 mils bonded to the ceramic core by a metallic film, a layer of nickel having a thickness substantially less than the copper layer plated on the copper layer, at least a portion of the first planar surface being electrically isolated from the metal base member for supporting a plurality of power microwave transistors, the copper layer having the characteristics and thickness to spread heat from a plurality of power microwave transistors mounted on the first electrically isolated planar surface, the second planar surface being brazed to the metallic base member; a frame assembly brazed to one of either the metallic layer of the substrate or the metallic base member surrounding and spaced from the electrically isolated first planar surface of the substrate for connecting electrically at least two terminals exterior the respective package, the two terminals being electrically isolated from the substrate and the base member and from each other; a plurality of power microwave transistors mounted to the electrically isolated first planar surface of the substrate; and a metallic cover bonded to the frame assembly for hermetically sealing the plurality of transistors within the respective package.
Claim 2
Dependent Claim
332 words
A power microwave generating transistor module, comprising: a thermally conductive metallic plate for supporting a plurality of electronic components; a plurality of spaced inductive, capacitive, and resistive components mounted on the metallic plate; a plurality of power microwave transistor packages spaced from the inductive, capacitive, and resistive components, and from each other mounted on the metallic plate; the plurality of components, and the transistors of the transistor packages being interconnected electrically to produce an alternating output signal of a predetermined wattage, each transistor package including: a metallic base member fixedly attached to and in physical engagement with the metallic plate for conducting heat from the base member to the metallic plate, a substrate having a ceramic core with first and second opposite planar surfaces, each of the planar surfaces having a layer of copper with a thickness in the range of approximately 0.5 to 7 mils bonded to the ceramic core by a metallic film, a layer of nickel having a thickness substantially less than the copper layer plated on the copper layer, at least a portion of the first planar surface being electrically isolated from the metal base member for supporting a plurality of power microwave transistors, the copper layer having the characteristics and thickness to spread heat from a plurality of power microwave transistors mounted on the first electrically isolated planar surface, the second planar surface being brazed to the metallic base member; a frame assembly brazed to one of either the metallic layer of the substrate or the metallic base member surrounding and spaced from the electrically isolated first planar surface of the substrate for connecting electrically at least two terminals exterior the respective package, the two terminals being electrically isolated from the substrate and the base member and from each other; a plurality of power microwave transistors mounted to the electrically isolated first planar surface of the substrate; and a metallic cover bonded to the frame assembly for hermetically sealing the plurality of transistors within the respective package.
Claim 3
Dependent Claim
48 words
The module of claim 1 wherein the metallic base member of each of the plurality of transistor packages has opposite planar surfaces, the frame assembly is brazed to the first planar surface of the substrate surrounding and spaced from the electrically isolated portion of the first planar surface.
Claim 4
Dependent Claim
34 words
The module of claim 1 wherein the base member of each of the plurality of transistor packages is composed of a nickel plated tungsten copper mixture having a total thickness of approximately sixty mils.
Claim 5
Dependent Claim
23 words
The module of claim 1 wherein the brazed base member and substrate of each of the plurality of transistor packages is gold plated.
Claim 6
Dependent Claim
36 words
The module of claim 1 wherein the ceramic core of the substrate of each of the plurality of transistor packages is composed of one of the group consisting of beryllium oxide, aluminum nitride and silicon carbide.
Claim 7
Dependent Claim
25 words
The module of claim 1 wherein the ceramic core of the substrate of each transistor package has a thickness of approximately 7 to 40 mils.
Claim 8
Dependent Claim
36 words
The module of claim 1 wherein the bonding material for each copper layer is a film approximately 20 to 80 nanometers thick composed of one of the group consisting of chromium, titanium, molybdenum, tungsten, and titanium-tungsten.
Claim 9
Dependent Claim
28 words
The module of claim 1 wherein the brazing material for brazing the base member, substrate, and frame assembly to one another is a mixture of silver and copper.
Claim 10
Dependent Claim
43 words
The module of claim 1 wherein the plurality of transistors of each of the plurality of transistor packages includes a silicon die, and the silicon die is soldered to the electrically isolated first surface of the corresponding substrate with a gold silicon solder.
Claim 11
Dependent Claim
27 words
The module of claim 1 wherein the metallic cover of each of the plurality of transistor packages is bonded to the frame assembly with gold tin solder.
Claim 12
Dependent Claim
62 words
The module of claim 1 wherein the metallic base member of each of the plurality of transistor packages has a centrally disposed recess, the frame assembly is brazed to the base member surrounding the recess, and the substrate is disposed in the recess and spaced from the edges thereof for electrically isolating the first surface of the substrate from the base member.
Claim 13
Dependent Claim
63 words
The module of claim 1 wherein the base member of each of the plurality of transistor packages is composed of a tungsten copper mixture having a total thickness of approximately sixty mils, nickel plating overlaying the mixture having a thickness of approximately one tenth of a mil, and gold plating overlaying the nickel having a thickness of approximately fifteen hundredths of a mil.
Claim 14
Dependent Claim
136 words
The module of claim 1 wherein the substrate of each of the plurality of transistor packages has a ceramic core composed of one of the group consisting of beryllium oxide, aluminum nitride, and silicon carbide having a thickness in the range of approximately 7 to 40 mils, a film of one of the group consisting of chromium, titanium, molybdenum, tungsten, and titanium-tungsten, deposited directly on the ceramic core having a thickness in the range of approximately 20 to 80 nanometers bonding the copper layer to the first and second planar surfaces of the core, a layer of nickel approximately one tenth of a mil thick plated to the copper layer, and a layer of gold approximately fifteen hundredths of a mil thick plated to the nickel layer at least on the first surface of the substrate.
Claim 15
Dependent Claim
35 words
The module of claim 13 wherein the brazing material for brazing the base member, substrate, and frame assembly to one another is a layer approximately one mil thick of a mixture of silver and copper.
Claim 16
Dependent Claim
43 words
The module of claim 14 wherein the plurality of transistors of each of the plurality of transistor packages includes a silicon die, and the silicon die is soldered to the electrically isolated first surface of the corresponding substrate with a gold silicon solder.
Claim 17
Dependent Claim
225 words
a power transistor package, comprising: a metallic base member; a substrate having a ceramic core with first and second opposite planar surfaces, each of the planar surfaces having a layer of copper with a thickness in the range of approximately 0.5 to 7 mils bonded to each of the planar surfaces by a metallic film; a metallic layer of nickel having a thickness substantially less than the copper layer plated on the copper layer, at least a portion of the first planar surface being electrically isolated from the base member for supporting a plurality of power transistors, the copper layer having the characteristics and thickness to spread heat from the plurality of power microwave transistors mounted on the electrically isolated planar surface, the second planar surface being brazed to the metallic base member; a frame assembly brazed to one of either the metallic layer on the substrate or metallic base member surrounding and spaced from the electrically isolated planar surface of the substrate for connecting electrically at least two terminals exterior the respective package, the two terminals being electrically isolated from the substrate and the base member and from each other; a plurality of power transistors mounted to the electrically isolated planar surface of the substrate; and a metallic cover bonded to the frame assembly for hermetically sealing the plurality of transistors within the package.
Claim 18
Dependent Claim
225 words
a power transistor package, comprising: a metallic base member; a substrate having a ceramic core with first and second opposite planar surfaces, each of the planar surfaces having a layer of copper with a thickness in the range of approximately 0.5 to 7 mils bonded to each of the planar surfaces by a metallic film; a metallic layer of nickel having a thickness substantially less than the copper layer plated on the copper layer, at least a portion of the first planar surface being electrically isolated from the base member for supporting a plurality of power transistors, the copper layer having the characteristics and thickness to spread heat from the plurality of power microwave transistors mounted on the electrically isolated planar surface, the second planar surface being brazed to the metallic base member; a frame assembly brazed to one of either the metallic layer on the substrate or metallic base member surrounding and spaced from the electrically isolated planar surface of the substrate for connecting electrically at least two terminals exterior the respective package, the two terminals being electrically isolated from the substrate and the base member and from each other; a plurality of power transistors mounted to the electrically isolated planar surface of the substrate; and a metallic cover bonded to the frame assembly for hermetically sealing the plurality of transistors within the package.
Claim 19
Dependent Claim
38 words
The package of claim 16 wherein the metallic base member has opposite planar surfaces, the frame assembly is brazed to the first surface of the substrate surrounding and spaced from the electrically isolated portion of the first surface.
Claim 20
Dependent Claim
15 words
The package of claim 16 wherein the brazed base member and substrate is gold plated.
Claim 21
Dependent Claim
25 words
The package of claim 16 wherein the ceramic core is composed of one of the group consisting of beryllium oxide, aluminum nitride and silicon carbide.
Claim 22
Dependent Claim
36 words
The package of claim 16 wherein the bonding material for the copper layer is a film approximately 20 to 80 nanometers thick composed of one of the group consisting of chromium, titanium, molybdenum, tungsten, and titanium-tungsten.
Claim 23
Dependent Claim
28 words
The package of claim 16 wherein the brazing material for brazing the base member, substrate, and frame assembly to one another is a mixture of silver and copper.
Claim 24
Dependent Claim
34 words
The package of claim 16 wherein the plurality of transistors include a silicon die, and the silicon die is soldered to the electrically isolated first surface of the substrate with a gold silicon solder.
Claim 25
Dependent Claim
19 words
The package of claim 16 wherein the metallic cover is bonded to the frame assembly with gold tin solder.
Claim 26
Dependent Claim
54 words
The package of claim 16 wherein the metallic base member has a centrally disposed recess, the frame assembly is brazed to the base member surrounding the recess, and the substrate is disposed in the recess and spaced from the edges thereof for electrically isolating the first surface of the substrate from the base member.
Claim 27
Dependent Claim
107 words
The package of claim 16 wherein the substrate has a ceramic core composed of one of the group consisting of beryllium oxide, aluminum nitride, and silicon carbide having a thickness in the range of approximately 7 to 40 mils, a film of one of the group consisting of chromium, titanium, molybdenum, tungsten, and titanium-tungsten, deposited directly on the ceramic core having a thickness in the range of approximately 20 to 80 nanometers bonding the copper layer to the core, a layer of nickel plated to the copper layer, and a layer of gold plated to the nickel layer on at least the first surface of the substrate.
Claim 28
Dependent Claim
31 words
The package of claim 25 wherein the brazing material for brazing the base member, substrate, and frame assembly to one another is a preform of a mixture of silver and copper.
Claim 29
Dependent Claim
37 words
The package of claim 26 wherein the plurality of transistors of a package includes a silicon die, and the silicon die is soldered to the electrically isolated first surface of the substrate with a gold silicon solder.
Claim 30
Dependent Claim
19 words
The package of claim 27 wherein the metallic cover is bonded to the frame assembly with gold tin solder.
Claim 31
Dependent Claim
276 words
A power microwave generating transistor module, comprising a thermally conductive metallic plate for supporting a plurality of electronic components; a plurality of spaced inductive, capacitive, and resistive components mounted on the metallic plate; a plurality of power microwave transistor packages spaced from the inductive, capacitive, and resistive components, and from each other mounted on the metallic plate, each of the packages including; a metallic base member fixedly attached to and in physical engagement with the metallic plate for conducting heat from the base member to the metallic plate, a substrate having a ceramic core with first and second opposite planar surfaces, each of the planar surfaces having a layer of copper with a thickness in the range of approximately 0.5 to 7 mils bonded to the ceramic core by a metallic film, a layer of nickel having a thickness substantially less than the copper layer plated on the copper layer, at least a portion of first planar surface being electrically isolated from the metallic base member for supporting a plurality of power microwave transistors, the copper layer having the characteristics and thickness to spread heat from a plurality of power microwave transistors mounted on the first electrically isolated planar surface, the nickel layer of the second planar surface being brazed to the metallic base member; and a frame assembly brazed to one of either of the layer of nickel or the metallic base member surrounding and spaced from the electrically isolated planar surface portion of the substrate for connecting electrically at least two terminals exterior the respective transistor package, the two terminals being electrically isolated from the substrate and the base member and from each other.
Claim 32
Dependent Claim
276 words
A power microwave generating transistor module, comprising a thermally conductive metallic plate for supporting a plurality of electronic components; a plurality of spaced inductive, capacitive, and resistive components mounted on the metallic plate; a plurality of power microwave transistor packages spaced from the inductive, capacitive, and resistive components, and from each other mounted on the metallic plate, each of the packages including; a metallic base member fixedly attached to and in physical engagement with the metallic plate for conducting heat from the base member to the metallic plate, a substrate having a ceramic core with first and second opposite planar surfaces, each of the planar surfaces having a layer of copper with a thickness in the range of approximately 0.5 to 7 mils bonded to the ceramic core by a metallic film, a layer of nickel having a thickness substantially less than the copper layer plated on the copper layer, at least a portion of first planar surface being electrically isolated from the metallic base member for supporting a plurality of power microwave transistors, the copper layer having the characteristics and thickness to spread heat from a plurality of power microwave transistors mounted on the first electrically isolated planar surface, the nickel layer of the second planar surface being brazed to the metallic base member; and a frame assembly brazed to one of either of the layer of nickel or the metallic base member surrounding and spaced from the electrically isolated planar surface portion of the substrate for connecting electrically at least two terminals exterior the respective transistor package, the two terminals being electrically isolated from the substrate and the base member and from each other.
Claim 33
Dependent Claim
178 words
A power transistor package, comprising: a metallic base member; a substrate having a ceramic core with first and second opposite planar surfaces, each of the planar surfaces having a layer of copper with a thickness in the range of approximately 0.5 to 7 mils bonded to each of the planar surfaces by a metallic film; a layer of nickel having a thickness substantially less than the copper layer plated on the copper layer, at least a portion of the first planar surface being electrically isolated from the base member for supporting a plurality of power transistors, the copper layer having the characteristics and thickness to spread heat from power microwave transistors mounted on the electrically isolated planar surface, the second planar surface being brazed to the metallic base member; and a frame assembly brazed to a metallic surface surrounding and spaced from the electrically isolated planar surface of the substrate for connecting electrically at least two terminals exterior the respective package, the two terminals being electrically isolated from the substrate and the base member and from each other.
Claim 34
Dependent Claim
178 words
A power transistor package, comprising: a metallic base member; a substrate having a ceramic core with first and second opposite planar surfaces, each of the planar surfaces having a layer of copper with a thickness in the range of approximately 0.5 to 7 mils bonded to each of the planar surfaces by a metallic film; a layer of nickel having a thickness substantially less than the copper layer plated on the copper layer, at least a portion of the first planar surface being electrically isolated from the base member for supporting a plurality of power transistors, the copper layer having the characteristics and thickness to spread heat from power microwave transistors mounted on the electrically isolated planar surface, the second planar surface being brazed to the metallic base member; and a frame assembly brazed to a metallic surface surrounding and spaced from the electrically isolated planar surface of the substrate for connecting electrically at least two terminals exterior the respective package, the two terminals being electrically isolated from the substrate and the base member and from each other.
Claim 35
Dependent Claim
183 words
A package for a power transistor, comprising: a ceramic substrate having a first surface for supporting at least one power transistor thereon, and a second surface opposite the first surface, at least the first surface of the first and second opposite surfaces being metallized; at least the first metallized surface including a layer of copper having a thickness in the range of approximately 0.5 to 7 mils, for laterally spreading heat generated by a mounted power transistor; a thin metallic film bonding the copper layer to the respective surface of the substrate, the thin film being of the type having a low thermal resistance for conducting the heat spread by the copper layer into the ceramic substrate through the first surface of the substrate, a layer of nickel having a thickness substantially less than the copper layer plated on the copper layer; and metal in contact with the second surface of the substrate for dissipating heat exiting the substrate; the ceramic substrate electrically isolating the first metallized surface of the substrate from the metal in contact with the second surface of the substrate.
Claim 36
Dependent Claim
183 words
A package for a power transistor, comprising: a ceramic substrate having a first surface for supporting at least one power transistor thereon, and a second surface opposite the first surface, at least the first surface of the first and second opposite surfaces being metallized; at least the first metallized surface including a layer of copper having a thickness in the range of approximately 0.5 to 7 mils, for laterally spreading heat generated by a mounted power transistor; a thin metallic film bonding the copper layer to the respective surface of the substrate, the thin film being of the type having a low thermal resistance for conducting the heat spread by the copper layer into the ceramic substrate through the first surface of the substrate, a layer of nickel having a thickness substantially less than the copper layer plated on the copper layer; and metal in contact with the second surface of the substrate for dissipating heat exiting the substrate; the ceramic substrate electrically isolating the first metallized surface of the substrate from the metal in contact with the second surface of the substrate.
Claim 37
Dependent Claim
18 words
The package of claim 31 wherein the ceramic substrate has a thickness of approximately 7 to 40 mils.
Claim 38
Dependent Claim
33 words
The package of claim 31 wherein the thin metallic film is a film approximately 20 to 80 nanometers thick composed of one of the group consisting of chromium, titanium, molybdenum, tungsten, and titanium-tungsten.
Claim 39
Dependent Claim
25 words
The package of claim 31 wherein the ceramic substrate is composed of one of the group consisting of aluminum nitrate, silicon carbide, and beryllium oxide.
Claim 40
Dependent Claim
25 words
The package of claim 31 further comprising at least one power transistor mounted to and overlaying the metallized electrically isolated first surface of the substrate.
Claim 41
Dependent Claim
24 words
The package of claim 35 further comprising, means covering the first metallized surface of the substrate for enclosing the at least one power transistor.
Claim 42
Dependent Claim
32 words
The package of claim 36 wherein the means for enclosing the at least one power transistor includes a frame surrounding the electrically isolated first surface of the substrate for supporting a cover.
Claim 43
Dependent Claim
24 words
The package of claim 37 wherein the means for enclosing the at least one power transistor further includes a cover attached to the frame.
Claim 44
Dependent Claim
180 words
A power generating transistor module, comprising: a plurality of metallized ceramic substrate portions, each having a first planar surface and a second planar surface opposite the first planar surface; a plurality of spaced power transistors mounted on the metallized first surface of each metallized portion; at least each metallized first surface portion including a layer of copper having a thickness in the range of approximately 0.5 to 7 mils for spreading heat generated by the plurality of transistors; a thin metallic film bonding the layer of copper to the respective planar surface of the substrate; the metallic film being of the type having a low thermal resistance for conducting heat from the copper layer and entering the substrate through the first surface; a metal base member mounted opposing the second surface of each of the plurality of metallized substrate portions for conducting heat from said substrate; the metallic base member being electrically isolated from the plurality of metallized first planar surfaces; and means interconnecting electrically the plurality of spaced power transistors for producing an output signal of a predetermined wattage.
Claim 45
Dependent Claim
180 words
A power generating transistor module, comprising: a plurality of metallized ceramic substrate portions, each having a first planar surface and a second planar surface opposite the first planar surface; a plurality of spaced power transistors mounted on the metallized first surface of each metallized portion; at least each metallized first surface portion including a layer of copper having a thickness in the range of approximately 0.5 to 7 mils for spreading heat generated by the plurality of transistors; a thin metallic film bonding the layer of copper to the respective planar surface of the substrate; the metallic film being of the type having a low thermal resistance for conducting heat from the copper layer and entering the substrate through the first surface; a metal base member mounted opposing the second surface of each of the plurality of metallized substrate portions for conducting heat from said substrate; the metallic base member being electrically isolated from the plurality of metallized first planar surfaces; and means interconnecting electrically the plurality of spaced power transistors for producing an output signal of a predetermined wattage.
Claim 46
Dependent Claim
22 words
The module of claim 39 further comprising means covering the plurality of metallized substrate portions for enclosing the plurality of spaced transistors.
Claim 47
Dependent Claim
74 words
The module of claim 40 wherein the means for enclosing the power transistors includes; a frame attached to the base member surrounding and spaced from the first planar surface metallized substrate portions, the frame including means for connecting electrically at least two terminals of the plurality of transistors, the two terminals being electrically isolated from the metallized substrate portions and the base member and from each other; and a cover attached to the frame.
Claim 48
Dependent Claim
23 words
The module of claim 39 wherein each metallized substrate portion has a ceramic core with a thickness of approximately 7 to 40 mils.
Claim 49
Dependent Claim
29 words
The module of claim 39 wherein the ceramic of the metallized substrate portions is composed of one of the group consisting of aluminum nitrate, silicon carbide, and beryllium oxide.
Claim 50
Dependent Claim
33 words
The module of claim 39 wherein the thin metallic film is a film approximately 20 to 80 nanometers thick composed of one of the group consisting of chromium, titanium, molybdenum, tungsten, and titanium-tungsten.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2001-09-28 | 2002-03-30 | 2002-09-29 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-09-28 | 2006-03-30 | 2006-09-29 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-09-28 | 2010-03-30 | 2010-09-29 | $7700.00 | Window Closed / Lapsed |