US4556899A
Expired / Lapsed
US
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Insulated type semiconductor devices
Assignee: Hitachi Ltd
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Filing: 1982-06-07
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Granted: 1985-12-03
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Expires: 2002-06-07
Abstract
Abstract In an insulated type semiconductor device, a metal member is disposed between an insulating member and a circuit element which includes a semiconductor substrate. The metal member is a composite metal member having at least two different kinds of metal layers bonded to each other. In a preferred embodiment, in order to reduce undesirable effects caused by differences in the thermal coefficients α I and α S of the insulating member and the semiconductor substrate, respectively, the thermal expansion coefficient of said composite metal member as a whole α M is adjusted in a range between α I and α S .
Inventors
- 👤 Yasutoshi Kurihara
- 👤 Yoshihiro Suzuki
- 👤 Michio Ooue
- 👤 Hiroaki Hachino
- 👤 Mitsuo Yanagi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 17:08
CPC Classifications
H; H10; H10W; H10W70/00; H10W70/60; H10W70/67; H10W70/68; H10W70/6875; H10W70/611; H05; H05K; H05K1/00; H05K1/02; H05K1/03; H05K1/05; H05K1/053; H10W90/00; H10W90/701; H10W90/751; H10W90/754
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
7 words
A semiconductor device comprising: a support member;
Claim 2
Dependent Claim
7 words
A semiconductor device comprising: a support member;
Claim 3
Dependent Claim
131 words
an insulating member disposed on said support member; a metal member soldered on said insulating member; and at least one circuit element including a semiconductor substrate soldered on said metal member, wherein the metal member is a composite metal member comprising at least two different kinds of metal layers bonded to each other, and wherein the thermal expansion coefficient of said composite metal member as a whole (α M ) is adjusted in a range between the thermal expansion coefficient of the insulating member (α I ) and that of the semiconductor substrate (α S ) to reduce deterioration of the solder between the metal member and the insulating member and between the semiconductor substrate and the metal member during thermal cycles which occur in the semiconductor device during its operation.
Claim 4
Dependent Claim
131 words
an insulating member disposed on said support member; a metal member soldered on said insulating member; and at least one circuit element including a semiconductor substrate soldered on said metal member, wherein the metal member is a composite metal member comprising at least two different kinds of metal layers bonded to each other, and wherein the thermal expansion coefficient of said composite metal member as a whole (α M ) is adjusted in a range between the thermal expansion coefficient of the insulating member (α I ) and that of the semiconductor substrate (α S ) to reduce deterioration of the solder between the metal member and the insulating member and between the semiconductor substrate and the metal member during thermal cycles which occur in the semiconductor device during its operation.
Claim 5
Dependent Claim
45 words
A semiconductor device according to claim 1, wherein the insulating member has a larger major surface than that of the semiconductor substrate and the α M is adjusted within a range between the α I and the mid-point of α S and α I .
Claim 6
Dependent Claim
22 words
A semiconductor device according to claim 2, wherein said composite metal member comprises a laminated structure of different kinds of metal sheets.
Claim 7
Dependent Claim
49 words
A semiconductor device according to claim 3, wherein said laminated structure comprises one center layer made of a first metal and two outer layers made of a second metal other than the first metal, which outer layers are clad on a pair of major surfaces of the center layer.
Claim 8
Dependent Claim
29 words
A semiconductor device according to claim 1, wherein said support member comprises a composite metal member having at least two different kinds of metal layers bonded to each other.
Claim 9
Dependent Claim
63 words
A semiconductor device according to claim 5, wherein said support member is a laminated structure of different kinds of metal sheets wherein said laminated structure comprises one center layer made of a first metal and two outer layers made of a second metal other than the first metal, which outer layers are clad on a pair of major surfaces of the center layer.
Claim 10
Dependent Claim
20 words
A semiconductor device according to claim 1, wherein the insulating member has an area greater than 500 mm 2 .
Claim 11
Dependent Claim
13 words
A semiconductor device according to claim 7, wherein the insulating member comprises alumina.
Claim 12
Dependent Claim
24 words
A semiconductor device according to claim 4, wherein said center layer is comprised of copper and said outer layers are comprised of FeNi alloy.
Claim 13
Dependent Claim
153 words
A semiconductor device comprising: an insulating support member having first and second major surfaces on opposite sides of said insulating support member; a metal member soldered on the first major surface of said insulating support member; and at least one circuit element including a semiconductor substrate soldered on said metal member, wherein the metal member is a composite metal member comprising at least two different kinds of metal layers bonded to each other, and wherein the thermal expansion coefficient of said composite metal member as a whole (α M ) is adjusted in a range between the thermal expansion coefficient of said insulating support member (α I ) and that of said semiconductor substrate (α S ) to reduce deterioration of the solder between the metal member and the insulating support member and between the semiconductor substrate and the metal member during thermal cycles which occur in the semiconductor device during its operation.
Claim 14
Dependent Claim
153 words
A semiconductor device comprising: an insulating support member having first and second major surfaces on opposite sides of said insulating support member; a metal member soldered on the first major surface of said insulating support member; and at least one circuit element including a semiconductor substrate soldered on said metal member, wherein the metal member is a composite metal member comprising at least two different kinds of metal layers bonded to each other, and wherein the thermal expansion coefficient of said composite metal member as a whole (α M ) is adjusted in a range between the thermal expansion coefficient of said insulating support member (α I ) and that of said semiconductor substrate (α S ) to reduce deterioration of the solder between the metal member and the insulating support member and between the semiconductor substrate and the metal member during thermal cycles which occur in the semiconductor device during its operation.
Claim 15
Dependent Claim
30 words
A semiconductor device according to claim 10, wherein the second major surface of said insulating support member includes a plurality of heat dissipation fins projecting from said second major surface.
Claim 16
Dependent Claim
24 words
A semiconductor device according to claim 7 or 11 wherein the metal layers in said composite metal member are bonded directly to one another.
References Cited (Backward Citations)
US3248681A
Cited
US3311798A
Cited
US3597658A
Cited
US3829598A
Cited
US4025997A
Cited
JPS5389664A
Cited
US4340902A
Cited
US4227036A
Cited
US4278990A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1988-12-02 | 1989-06-03 | 1989-12-03 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1992-12-02 | 1993-06-03 | 1993-12-03 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1996-12-02 | 1997-06-03 | 1997-12-03 | $7700.00 | Window Closed / Lapsed |