Patent US5814852A successfully refreshed from Google Patents.
US5814852A
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Method of forming a Ta2 O5 dielectric layer, method of forming a capacitor having a Ta2 O5 dielectric layer, and capacitor construction
Assignee: Micron Technology Inc
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Filing: 1996-06-11
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Granted: 1998-09-29
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Expires: 2016-06-11
Abstract
Abstract A method of forming a dielectric layer includes, a) chemical vapor depositing a dielectric layer of Ta 2 O 5 atop a substrate; and b) providing a predominately amorphous diffusion barrier layer over the Ta 2 O 5 dielectric layer. A method of forming a capacitor includes, a) providing a node to which electrical connection to a capacitor is to be made; b) providing a first electrically conductive capacitor plate over the node; c) chemical vapor depositing a capacitor dielectric layer of Ta 2 O 5 over the first electrically conductive capacitor plate; and d) providing a predominately amorphous diffusion barrier layer over the Ta 2 O 5 dielectric layer. A capacitor construction is also disclosed. The preferred amorphous diffusion barrier layer is electrically conductive and constitutes a metal organic chemical vapor deposited TiC x N y O z , where "x" is in the range of from 0.01 to 0.5, and "y" is in the range of from 0.99 to 0.5, and "z" is in the range of from 0 to 0.3, with the sum of "x", "y" and "z" equalling about 1.0. Such is preferably deposited by utilizing a gaseous titanium organometallic precursor of the formula Ti(NR 2 ) 4 , where R is selected from the group consisting of H and a carbon containing radical, and utilizing deposition conditions of from 200° C. to 600° C. and from 0.1 to 100 Torr.
Inventors
- 👤 Gurtej S. Sandhu
- 👤 Pierre C. Fazan
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 20:01
CPC Classifications
H; H10; H10D; H10D1/00; H10D1/60; H10D1/68; H10D1/682; H10D1/684; H10D84/00; H10D84/01
Claims Analysis
Total Claims: 31
Claim 1
Independent Claim
102 words
A capacitor comprising: a first electrically conductive capacitor plate; a capacitor dielectric layer adjacent the first electrically conductive capacitor plate, the capacitor dielectric layer comprising Ta 2 O 5 ; a second electrically conductive capacitor plate, the Ta 2 O 5 dielectric layer being positioned between the first and second electrically conductive plates; and a predominately amorphous diffusion barrier layer adjacent the Ta 2 O 5 dielectric layer, the diffusion layer comprising TiC x N y , and wherein "x" is in a range of about 0.01 to about 0.05 and "y" is in a range of about 0.99 to about 0.5.
Claim 2
Dependent Claim
102 words
A capacitor comprising: a first electrically conductive capacitor plate; a capacitor dielectric layer adjacent the first electrically conductive capacitor plate, the capacitor dielectric layer comprising Ta 2 O 5 ; a second electrically conductive capacitor plate, the Ta 2 O 5 dielectric layer being positioned between the first and second electrically conductive plates; and a predominately amorphous diffusion barrier layer adjacent the Ta 2 O 5 dielectric layer, the diffusion layer comprising TiC x N y , and wherein "x" is in a range of about 0.01 to about 0.05 and "y" is in a range of about 0.99 to about 0.5.
Claim 3
Dependent Claim
31 words
The capacitor of claim 1 wherein the amorphous diffusion barrier layer comprises a material which is a barrier to out diffusion of tantalum from the Ta 2 O 5 dielectric layer.
Claim 4
Dependent Claim
14 words
The capacitor of claim 1 wherein the amorphous diffusion barrier layer is electrically conductive.
Claim 5
Dependent Claim
33 words
The capacitor of claim 1 wherein the amorphous diffusion barrier layer is electrically conductive and constitutes a thickness which is effective to form a predominate portion of the second electrically conductive capacitor plate.
Claim 6
Dependent Claim
31 words
The capacitor of claim 1 wherein the amorphous diffusion barrier layer is electrically conductive, and a predominate portion of the second capacitor plate is discrete from the amorphous diffusion barrier layer.
Claim 7
Dependent Claim
63 words
The capacitor of claim 1 wherein the amorphous diffusion barrier layer comprises TiC x N y O z , where "x" is in the range of from 0.01 to 0.5, and "y" is in the range of from 0.99 to 0.5, and "z" is in the range of from 0 to 0.3, with the sum of "x", "y" and "z" equalling about 1.0.
Claim 8
Dependent Claim
91 words
The capacitor of claim 1 wherein the amorphous diffusion barrier layer comprises TiC x N y O z , where "x" is in the range of from 0.01 to 0.5, and "y" is in the range of from 0.99 to 0.5, and "z" is in the range of from 0 to 0.3, with the sum of "x", "y" and "z" equalling about 1.0; and the amorphous diffusion barrier layer is electrically conductive and constitutes a thickness which is effective to form a predominate portion of the second electrically conductive capacitor plate.
Claim 9
Dependent Claim
89 words
The capacitor of claim 1 wherein the amorphous diffusion barrier layer comprises TiC x N y O z , where "x" is in the range of from 0.01 to 0.5, and "y" is in the range of from 0.99 to 0.5, and "z" is in the range of from 0 to 0.3, with the sum of "x", "y" and "z" equalling about 1.0; and the amorphous diffusion barrier layer is electrically conductive, and a predominate portion of the second capacitor plate is discrete from the amorphous diffusion barrier layer.
Claim 10
Dependent Claim
85 words
A capacitor comprising: a first electrically conductive capacitor plate; a capacitor dielectric layer adjacent the first electrically conductive capacitor plate, the capacitor dielectric layer comprising Ta 2 O 5 ; a second electrically conductive capacitor plate, the Ta 2 O 5 dielectric layer being positioned between the first and second electrically conductive plates; and a pair of predominately amorphous diffusion barrier layers adjacent the Ta 2 O 5 dielectric layer, and wherein the amorphous diffusion barrier layers comprise TiC x N y O z .
Claim 11
Dependent Claim
85 words
A capacitor comprising: a first electrically conductive capacitor plate; a capacitor dielectric layer adjacent the first electrically conductive capacitor plate, the capacitor dielectric layer comprising Ta 2 O 5 ; a second electrically conductive capacitor plate, the Ta 2 O 5 dielectric layer being positioned between the first and second electrically conductive plates; and a pair of predominately amorphous diffusion barrier layers adjacent the Ta 2 O 5 dielectric layer, and wherein the amorphous diffusion barrier layers comprise TiC x N y O z .
Claim 12
Dependent Claim
31 words
The capacitor of claim 9 wherein the amorphous diffusion barrier layers comprise a material which is a barrier to out diffusion of tantalum from the Ta 2 O 5 dielectric layer.
Claim 13
Dependent Claim
14 words
The capacitor of claim 9 wherein the amorphous diffusion barrier layers are electrically conductive.
Claim 14
Dependent Claim
37 words
The capacitor of claim 9 wherein the amorphous diffusion barrier layers are electrically conductive and constitute respective thicknesses which are effective to form a predominate portion of the first and the second electrically conductive capacitor plates, respectively.
Claim 15
Dependent Claim
35 words
The capacitor of claim 9 wherein the amorphous diffusion barrier layers are electrically conductive, and predominate portions of each of the first and the second capacitor plate are discrete from the amorphous diffusion barrier layers.
Claim 16
Dependent Claim
49 words
The capacitor of claim 9 wherein "x" is in the range of from 0.01 to 0.5, and "y" is in the range of from 0.99 to 0.5, and "z" is in the range of from 0 to 0.3, with the sum of "x", "y" and "z" equalling about 1.0.
Claim 17
Dependent Claim
81 words
The capacitor of claim 9 wherein "x" is in the range of from 0.01 to 0.5, and "y" is in the range of from 0.99 to 0.5, and "z" is in the range of from 0 to 0.3, with the sum of "x", "y" and "z" equalling about 1.0; and the amorphous diffusion barrier layers are electrically conductive and constitute respective thicknesses which are effective to form a predominate portion of the first and the second electrically conductive capacitor plates, respectively.
Claim 18
Dependent Claim
79 words
The capacitor of claim 9 wherein "x" is in the range of from 0.01 to 0.5, and "y" is in the range of from 0.99 to 0.5, and "z" is in the range of from 0 to 0.3, with the sum of "x", "y" and "z" equalling about 1.0; and the amorphous diffusion barrier layers are electrically conductive, and predominate portions of each of the first and the second capacitor plate are discrete from the amorphous diffusion barrier layers.
Claim 19
Independent Claim
83 words
A device having at least two electrically conductive surfaces, comprising: a layer of Ta 2 O 5 positioned between the at least two conductive surfaces; and a diffusion barrier layer adjacent the Ta 2 O 5 layer, and which comprises TiC x N y O z , and wherein "x" lies in a range of about 0.01 to about 0.5, "y" lies in a range of about 0.99 to about 0.5, and "z" lies in a range of about 0 to about 0.3.
Claim 20
Independent Claim
83 words
A device having at least two electrically conductive surfaces, comprising: a layer of Ta 2 O 5 positioned between the at least two conductive surfaces; and a diffusion barrier layer adjacent the Ta 2 O 5 layer, and which comprises TiC x N y O z , and wherein "x" lies in a range of about 0.01 to about 0.5, "y" lies in a range of about 0.99 to about 0.5, and "z" lies in a range of about 0 to about 0.3.
Claim 21
Dependent Claim
36 words
A device as claimed in claim 17, wherein the device stores electrical charge, and wherein the at least two conductive surfaces comprise first and second plates which are oriented in spaced relation, one to the other.
Claim 22
Dependent Claim
37 words
A device as claimed in claim 17, wherein the device is a capacitor, and wherein the at least two conductive surfaces comprise first and second capacitor plates which are oriented in spaced relation, one to the other.
Claim 23
Dependent Claim
17 words
A device as claimed in claim 17, wherein the layer of Ta 2 O 5 is dielectric.
Claim 24
Dependent Claim
33 words
A device as claimed in claim 17, wherein the diffusion barrier layer is amorphous, and wherein the diffusion barrier layer substantially impedes out diffusion of Tantalum from the Ta 2 O 5 layer.
Claim 25
Dependent Claim
26 words
A device as claimed in claim 17, wherein the diffusion barrier layer comprises a pair of layers adjacent the layer of Ta 2 O 5 .
Claim 26
Dependent Claim
15 words
A device as claimed in claim 17, wherein the diffusion barrier layer is electrically conductive.
Claim 27
Dependent Claim
26 words
A device as claimed in claim 17, wherein the diffusion barrier layer is electrically conductive and forms a predominate portion of one of the conductive surfaces.
Claim 28
Dependent Claim
18 words
A device as claimed in claim 17, wherein the sum of "x", "y", and "z" equals about 1.0.
Claim 29
Dependent Claim
44 words
A device as claimed in claim 17, wherein the diffusion barrier layer comprises a pair of layers adjacent the Ta 2 O 5 layer, and wherein the individual diffusion barrier layers are electrically conductive and form predominate portions of the two conductive surfaces, respectively.
Claim 30
Dependent Claim
132 words
A capacitor comprising: a first electrically conductive capacitor plate; a capacitor dielectric layer positioned on the first electrically conductive capacitor plate, the capacitor dielectric layer comprising Ta 2 O 5 ; an amorphous diffusion barrier layer positioned on the capacitor dielectric layer, the amorphous diffusion barrier layer comprising TiC x N y O z , and wherein "X" is in the range of from 0.01 to 0.5; "Y" is in the range of from 0.99 to 0.5; and "Z" is in the range of from 0 to 0.3; and wherein the sum of "X", "Y" and "Z" equals about 1.0; and a second electrically conductive capacitor plate on the amorphous diffusion barrier layer, the dielectric layer and the amorphous diffusion barrier layer positioned between the first and second electrically conductive capacitor plates.
Claim 31
Dependent Claim
132 words
A capacitor comprising: a first electrically conductive capacitor plate; a capacitor dielectric layer positioned on the first electrically conductive capacitor plate, the capacitor dielectric layer comprising Ta 2 O 5 ; an amorphous diffusion barrier layer positioned on the capacitor dielectric layer, the amorphous diffusion barrier layer comprising TiC x N y O z , and wherein "X" is in the range of from 0.01 to 0.5; "Y" is in the range of from 0.99 to 0.5; and "Z" is in the range of from 0 to 0.3; and wherein the sum of "X", "Y" and "Z" equals about 1.0; and a second electrically conductive capacitor plate on the amorphous diffusion barrier layer, the dielectric layer and the amorphous diffusion barrier layer positioned between the first and second electrically conductive capacitor plates.
References Cited (Backward Citations)
JPH01222469A
Cited
US5057447A
Cited
US5082797A
Cited
US5234857A
Cited
US5324679A
Cited
US5192589A
Cited
US5279985A
Cited
US5142438A
Cited
US5302540A
Cited
US5162248A
Cited
US5471418A
Cited
US5340763A
Cited
US5338700A
Cited
US5246881A
Cited
US5278091A
Cited
US5340765A
Cited
US5489548A
Cited
US5504041A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2001-09-28 | 2002-03-30 | 2002-09-29 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-09-28 | 2006-03-30 | 2006-09-29 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-09-28 | 2010-03-30 | 2010-09-29 | $7700.00 | Window Closed / Lapsed |