US5324679A
Expired / Lapsed
US
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Method for manufacturing a semiconductor device having increased surface area conductive layer
Assignee: Samsung Electronics Co Ltd
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Filing: 1992-02-28
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Granted: 1994-06-28
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Expires: 2012-02-28
Abstract
Abstract A semiconductor device having a capacitor of large capacitance and the fabrication method thereof are disclosed. The semiconductor device comprises; a first electrode composed of a conductive structure whose entire surface, including sidewalls, are uneven and formed on the semiconductor substrate; a second electrode formed on the first electrode; and a dielectric film formed between the first and second electrodes. Also the method comprises the steps of forming as a first electrode a conductive structure with an uneven surface on a semiconductor structure, forming a dielectric film, and forming a conductive layer as a second electrode on the conductive structure. Accordingly, a capacitor of large capacitance and high reliability can be obtained.
Inventors
- 👤 Sung-tae Kim
- 👤 Kyung-hoon Kim
- 👤 Jae-hong Ko
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 22:13
CPC Classifications
H; H10; H10B; H10B12/00; H10B12/30; H10B12/31; H10B12/01; H10B12/02; H10B12/03; H10D; H10D1/00; H10D1/60; H10D1/68; H10D1/682; H10D1/684; H10D1/692; H10D1/696; H10P; H10P14/00; H10P14/20; H10P14/24; H10P14/34; H10P14/3451; H10P14/3452; H10P14/3458; H10P14/40; H10P14/416; Y; Y10; Y10S; Y10S438/00; Y10S438/964
Claims Analysis
Total Claims: 20
Claim 1
Independent Claim
99 words
A method for manufacturing a semiconductor device, which comprises the steps of: forming a conductive structure on a semiconductor substrate; depositing silicon nitride on said conductive structure to thereby form a nitride layer having pin holes on said conductive structure; forming a silicon oxide film on said nitride layer and in said pinholes; etching said silicon oxide film on said nitride layer and in said pinholes; etching said conductive structure through said pin holes to thereby give a first electrode of a capacitor; and forming a dielectric film and a second electrode of said capacitor on said first electrode.
Claim 2
Independent Claim
99 words
A method for manufacturing a semiconductor device, which comprises the steps of: forming a conductive structure on a semiconductor substrate; depositing silicon nitride on said conductive structure to thereby form a nitride layer having pin holes on said conductive structure; forming a silicon oxide film on said nitride layer and in said pinholes; etching said silicon oxide film on said nitride layer and in said pinholes; etching said conductive structure through said pin holes to thereby give a first electrode of a capacitor; and forming a dielectric film and a second electrode of said capacitor on said first electrode.
Claim 3
Dependent Claim
21 words
A method for manufacturing a semiconductor device as claimed in claim 1, wherein said conductive structure is composed of polycrystalline silicon.
Claim 4
Dependent Claim
20 words
A method for manufacturing a semiconductor device as claimed in claim 2, wherein said conductive structure is a polycrystalline pattern.
Claim 5
Dependent Claim
45 words
A method for manufacturing a semiconductor device as claimed in claim 3, wherein said polycrystalline silicon pattern is formed by depositing said polycrystalline silicon on said semiconductor substrate to form a polycrystalline silicon layer, implanting an impurity therein and then performing a conventional photolithorgaphy process.
Claim 6
Dependent Claim
25 words
A method for manufacturing a semiconductor device as claimed in claim 1, wherein said conductive structure is a portion of a single crystalline silicon substrate.
Claim 7
Dependent Claim
43 words
A method for manufacturing a semiconductor device as claimed in claim 5, wherein said conductive structure is formed by forming a trench in said single crystalline silicon substrate and then imparting conductivity to an inner surface of said trench by implanting an impurity.
Claim 8
Dependent Claim
30 words
A method for manufacturing a semiconductor device as claimed in claim 3, wherein said conductive structure is formed on the inner surface of a trench formed in said semiconductor substrate.
Claim 9
Dependent Claim
36 words
A method for manufacturing a semiconductor device as claimed in claim 3, wherein silicon nitride is deposited to a thickness of 30 Å to 500 Å by an LPCVD method to form a silicon nitride film.
Claim 10
Dependent Claim
34 words
A method for manufacturing a semiconductor device as claimed in claim 3, wherein the surface of said conductive structure with said silicon nitride film formed thereon is oxidized to form said silicon oxide film.
Claim 11
Dependent Claim
24 words
A method for manufacturing a semiconductor device as claimed in claim 9, said silicon oxide formed on said silicon nitride film is removed selectively.
Claim 12
Dependent Claim
30 words
A method for manufacturing a semiconductor device as claimed in claim 10, wherein said silicon oxide film is selectively removed by wet etching using an HF or buffered HF mixture.
Claim 13
Dependent Claim
23 words
A method for manufacturing a semiconductor device as claimed in claim 3, wherein said conductive structure is etched by anisotropic or isotropic etching.
Claim 14
Dependent Claim
27 words
A method for manufacturing a semiconductor device as claimed in claim 12, wherein said conductive structure is etched to a depth of 20 Å to 500 Å.
Claim 15
Independent Claim
87 words
A method for manufacturing a semiconductor device, which comprises the steps of: depositing polycrystalline silicon on a semiconductor substrate; forming a polycrystalline pattern; forming an insulation layer having pin holes on said polycrystalline pattern; etching said polycrystalline pattern through said pin holes; removing said insulating layer; imparting conductivity to said polycrystalline silicon pattern by implanting an impurity to thereby form a first electrode of a capacitor with an uneven surface; and then forming a dielectric film and a second electrode of said capacitor on said first electrode.
Claim 16
Independent Claim
87 words
A method for manufacturing a semiconductor device, which comprises the steps of: depositing polycrystalline silicon on a semiconductor substrate; forming a polycrystalline pattern; forming an insulation layer having pin holes on said polycrystalline pattern; etching said polycrystalline pattern through said pin holes; removing said insulating layer; imparting conductivity to said polycrystalline silicon pattern by implanting an impurity to thereby form a first electrode of a capacitor with an uneven surface; and then forming a dielectric film and a second electrode of said capacitor on said first electrode.
Claim 17
Dependent Claim
20 words
A method for manufacturing a semiconductor device as claimed in claim 1, wherein said dielectric film is an ONO film.
Claim 18
Dependent Claim
22 words
A method for manufacturing a semiconductor device as claimed in claim 1, wherein said second electrode is formed by depositing polycrystalline silicon.
Claim 19
Dependent Claim
30 words
A method for manufacturing a semiconductor device as claimed in claim 3, further comprising the step of depositing impurity-implanted polycrystalline silicon on said conductive structure after removing said insulating layer.
Claim 20
Dependent Claim
28 words
A method for manufacturing a semiconductor device as claimed in claim 17, wherein said impurity-implanted polycrystalline silicon is deposited to a thickness of 50 Å to 500 Å.
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