US5801066A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method and apparatus for measuring a change in the thickness of polishing pads used in chemical-mechanical planarization of semiconductor wafers
Assignee: Micron Technology Inc
•
Filing: 1997-03-06
•
Granted: 1998-09-01
•
Expires: 2017-03-06
Abstract
Abstract The inventive apparatus is a wafer planarizer that has a movable platen, a polishing pad positioned on the platen, a wafer carrier positioned opposite the polishing pad, and a measuring device that is engagable with the polishing pad. The polishing pad decreases as the wafer is conditioned in a straight line correlation with the resulting polishing rate of a wafer. The wafer is attachable to the wafer carrier, and it may be moved with the carrier to be selectively engaged with the polishing pad to planarize the wafer at a wafer polishing rate under a set of wafer polishing operating parameters. After the wafer is planarized, the pad is conditioned by removing a layer of material from the planarizing surface of the pad under a set of conditioning parameters. The measuring device measures the decrease in the thickness of the polishing pad after the pad is conditioned, and it correlates the actual decrease in pad thickness with an expected change in pad thickness. When the same pad conditioning parameters are used from one pad conditioning cycle to the next, a difference between the actual decrease in pad thickness and the expected change in pad thickness indicates a change in operating parameters.
Inventors
- 👤 Scott G. Meikle
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 20:42
CPC Classifications
B; B24; B24B; B24B53/00; B24B53/017; B24B49/00; B24B49/12; G; G01; G01B; G01B11/00; G01B11/02; G01B11/06; G01B11/0616; G01B11/0683
Claims Analysis
Total Claims: 32
Claim 1
Independent Claim
139 words
A method of identifying a change in polishing operating parameters in planarization of a semiconductor wafer against a polishing pad in which the polishing pad is conditioned by removing a layer of material from a planarizing surface on the pad according to a set of conditioning parameters, the method comprising the steps of: measuring an actual change in pad thickness caused by removing the layer of material from the planarizing surface of the pad; and comparing the actual change in pad thickness with an expected change in pad thickness based upon a polishing rate of previous wafers and a predetermined correlation between wafer polishing rates and changes in thickness per conditioning cycle, whereby a sufficient difference between the actual change in pad thickness and the expected change in pad thickness indicates a change in a wafer polishing operating parameter.
Claim 2
Independent Claim
139 words
A method of identifying a change in polishing operating parameters in planarization of a semiconductor wafer against a polishing pad in which the polishing pad is conditioned by removing a layer of material from a planarizing surface on the pad according to a set of conditioning parameters, the method comprising the steps of: measuring an actual change in pad thickness caused by removing the layer of material from the planarizing surface of the pad; and comparing the actual change in pad thickness with an expected change in pad thickness based upon a polishing rate of previous wafers and a predetermined correlation between wafer polishing rates and changes in thickness per conditioning cycle, whereby a sufficient difference between the actual change in pad thickness and the expected change in pad thickness indicates a change in a wafer polishing operating parameter.
Claim 3
Dependent Claim
75 words
The method of claim 1, further comprising evaluating an actual polishing rate of the wafer with the expected polishing rate of the wafer based on previous wafers, and determining that a wafer operating parameter other than the polishing pad condition has changed when the actual polishing rate of the wafer is sufficiently different than the expected polishing rate and the actual change in pad thickness is approximately equal to the expected change in pad thickness.
Claim 4
Dependent Claim
41 words
The method of claim 1 wherein a wafer planarizer with a measuring device for determining a change in pad thickness is provided, and wherein the measuring step further comprises engaging the measuring device with the polishing pad after each conditioning cycle.
Claim 5
Dependent Claim
41 words
The method of claim 3 wherein the measuring device is an interferometer and the engaging step comprises impinging the polishing pad with a laser beam and sensing a change in phase of a reflected portion of the beam with a detector.
Claim 6
Dependent Claim
41 words
The method of claim 3 wherein the measuring device is a laser position sensor and the engaging step comprises impinging the polishing pad with a laser position sensor and sensing a change in position of the laser beam with a detector.
Claim 7
Dependent Claim
192 words
In planarization of substrates, a method of identifying whether a polishing pad is a source of a change in a polishing rate of a substrate, the method comprising the steps of: determining an actual polishing rate of the substrate; estimating an expected change in pad thickness after conditioning of the pad according to the actual polishing rate of the substrate and a predetermined correlation between substrate polishing rates and changes in pad thickness per conditioning cycle for a set of conditioning parameters; removing a layer of material from a planarizing surface on the pad to condition the pad according to the set of conditioning parameters; measuring an actual change in pad thickness caused by removing the layer of material from the planarizing surface of the pad; and comparing the actual substrate polishing rate with an expected substrate polishing rate, and comparing the actual change in pad thickness with the expected change in pad thickness, wherein the polishing pad is likely a source of a discrepancy between the actual polishing rate and the expected polishing rate when the actual change in pad thickness is approximately equal to the expected change in pad thickness.
Claim 8
Dependent Claim
192 words
In planarization of substrates, a method of identifying whether a polishing pad is a source of a change in a polishing rate of a substrate, the method comprising the steps of: determining an actual polishing rate of the substrate; estimating an expected change in pad thickness after conditioning of the pad according to the actual polishing rate of the substrate and a predetermined correlation between substrate polishing rates and changes in pad thickness per conditioning cycle for a set of conditioning parameters; removing a layer of material from a planarizing surface on the pad to condition the pad according to the set of conditioning parameters; measuring an actual change in pad thickness caused by removing the layer of material from the planarizing surface of the pad; and comparing the actual substrate polishing rate with an expected substrate polishing rate, and comparing the actual change in pad thickness with the expected change in pad thickness, wherein the polishing pad is likely a source of a discrepancy between the actual polishing rate and the expected polishing rate when the actual change in pad thickness is approximately equal to the expected change in pad thickness.
Claim 9
Dependent Claim
135 words
A wafer planarizer, comprising: a moveable platen; a polishing pad positioned on the platen, the polishing pad having a thickness that decreases when the pad is conditioned; a wafer carrier positioned opposite the polishing pad, a wafer being attachable to the wafer carrier whereby the wafer is engageable with the polishing pad to planarize the wafer at a wafer polishing rate under a set of operating parameters; and a measuring device engagable with the polishing pad, the measuring device periodically measures the actual decrease in the thickness of the polishing pad caused by conditioning the pad and correlates the actual decrease in pad thickness with an expected change in pad thickness, whereby a difference between the actual decrease in pad thickness and the expected change in pad thickness indicates a change in the operating parameters.
Claim 10
Dependent Claim
135 words
A wafer planarizer, comprising: a moveable platen; a polishing pad positioned on the platen, the polishing pad having a thickness that decreases when the pad is conditioned; a wafer carrier positioned opposite the polishing pad, a wafer being attachable to the wafer carrier whereby the wafer is engageable with the polishing pad to planarize the wafer at a wafer polishing rate under a set of operating parameters; and a measuring device engagable with the polishing pad, the measuring device periodically measures the actual decrease in the thickness of the polishing pad caused by conditioning the pad and correlates the actual decrease in pad thickness with an expected change in pad thickness, whereby a difference between the actual decrease in pad thickness and the expected change in pad thickness indicates a change in the operating parameters.
Claim 11
Dependent Claim
12 words
The planarizer of claim 1 wherein the measuring device is an interferometer.
Claim 12
Dependent Claim
13 words
The planarizer of claim 1 wherein the measuring device is a capacitance meter.
Claim 13
Dependent Claim
14 words
The planarizer of claim 1 wherein the measuring device is a laser position sensor.
Claim 14
Dependent Claim
27 words
The planarizer of claim 1 wherein the measuring device engages a specific area on the polishing pad each time the actual decrease in pad thickness is measured.
Claim 15
Dependent Claim
25 words
The planarizer of claim 1 wherein the measuring device is able to measure a change in thickness of the pad to approximately within 0.2 μm.
Claim 16
Dependent Claim
19 words
The planarizer of claim 1, further comprising a conditioning device positioned over the pad for periodically reconditioning the pad.
Claim 17
Dependent Claim
131 words
A substrate planarizer, comprising: a moveable platen; a polishing pad positioned on the platen, the polishing pad having a thickness that decreases when the pad is conditioned; a substrate carrier positioned opposite the polishing pad, a substrate being attachable to the substrate carrier whereby the substrate is engageable with the polishing pad to planarize the substrate at a substrate polishing rate under a set of operating parameters; and an indicator having a measuring device that measures the actual decrease in the thickness of the polishing pad caused by conditioning the pad and compares the actual change in pad thickness with an expected change in pad thickness to indicate a change in an operating parameter when the actual change in pad thickness is sufficiently different than the expected change in pad thickness.
Claim 18
Dependent Claim
131 words
A substrate planarizer, comprising: a moveable platen; a polishing pad positioned on the platen, the polishing pad having a thickness that decreases when the pad is conditioned; a substrate carrier positioned opposite the polishing pad, a substrate being attachable to the substrate carrier whereby the substrate is engageable with the polishing pad to planarize the substrate at a substrate polishing rate under a set of operating parameters; and an indicator having a measuring device that measures the actual decrease in the thickness of the polishing pad caused by conditioning the pad and compares the actual change in pad thickness with an expected change in pad thickness to indicate a change in an operating parameter when the actual change in pad thickness is sufficiently different than the expected change in pad thickness.
Claim 19
Dependent Claim
12 words
The planarizer of claim 14 wherein the measuring device is a interferometer.
Claim 20
Dependent Claim
13 words
The planarizer of claim 14 wherein the measuring device is a capacitance meter.
Claim 21
Dependent Claim
14 words
The planarizer of claim 14 wherein the measuring device is a laser position sensor.
Claim 22
Dependent Claim
27 words
The planarizer of claim 14 wherein the measuring device engages a specific area on the polishing pad each time the actual decrease in pad thickness is measured.
Claim 23
Dependent Claim
25 words
The planarizer of claim 14 wherein the measuring device is able to measure a change in thickness of the pad to approximately within 0.2 μm.
Claim 24
Dependent Claim
19 words
The planarizer of claim 14, further comprising a conditioning device positioned over the pad for periodically reconditioning the pad.
Claim 25
Dependent Claim
194 words
A substrate planarizer, comprising: a moveable platen; a polishing pad positioned on the platen, the polishing pad having a thickness that decreases when the pad is conditioned; a substrate carrier positioned opposite the polishing pad, a substrate being attachable to the substrate carrier whereby the substrate is engageable with the polishing pad to planarize the substrate at a substrate polishing rate under a set of operating parameters; and a pad condition identifier having a measuring device that measures the actual decrease in the thickness of the polishing pad caused by conditioning the pad, correlates an actual polishing rate of a substrate with an expected decrease in pad thickness after conditioning the pad based on a predetermined relationship between polishing rates and changes in pad thickness during conditioning, and compares the actual decrease in pad thickness with the expected decrease in pad thickness, wherein the polishing pad is identified as a cause of a difference between the actual polishing rate and an expected polishing rate based on previous substrates when the actual decrease in pad thickness is approximately the same as the expected decrease in pad thickness for the actual polishing rate of the substrate.
Claim 26
Dependent Claim
194 words
A substrate planarizer, comprising: a moveable platen; a polishing pad positioned on the platen, the polishing pad having a thickness that decreases when the pad is conditioned; a substrate carrier positioned opposite the polishing pad, a substrate being attachable to the substrate carrier whereby the substrate is engageable with the polishing pad to planarize the substrate at a substrate polishing rate under a set of operating parameters; and a pad condition identifier having a measuring device that measures the actual decrease in the thickness of the polishing pad caused by conditioning the pad, correlates an actual polishing rate of a substrate with an expected decrease in pad thickness after conditioning the pad based on a predetermined relationship between polishing rates and changes in pad thickness during conditioning, and compares the actual decrease in pad thickness with the expected decrease in pad thickness, wherein the polishing pad is identified as a cause of a difference between the actual polishing rate and an expected polishing rate based on previous substrates when the actual decrease in pad thickness is approximately the same as the expected decrease in pad thickness for the actual polishing rate of the substrate.
Claim 27
Dependent Claim
12 words
The planarizer of claim 21 wherein the measuring device is an interferometer.
Claim 28
Dependent Claim
13 words
The planarizer of claim 21 wherein the measuring device is a capacitance meter.
Claim 29
Dependent Claim
13 words
The planarizer of claim 21 wherein measuring device is a laser position sensor.
Claim 30
Dependent Claim
27 words
The planarizer of claim 21 wherein the measuring device engages a specific area on the polishing pad each time the actual decrease in pad thickness is measured.
Claim 31
Dependent Claim
26 words
The planarizer of claim 21 wherein the measuring device is able to measure a change in pad thickness of the pad to approximately within 0.2 μm.
Claim 32
Dependent Claim
19 words
The planarizer of claim 21, further comprising a conditioning device positioned over the pad for periodically reconditioning the pad.
References Cited (Backward Citations)
US2662519A
Cited
US3090171A
Cited
US4203799A
Cited
US4200395A
Cited
US4377028A
Cited
US4358338A
Cited
US4422764A
Cited
US4367044A
Cited
US4640002A
Cited
US4513538A
Cited
US4660980A
Cited
US4879258A
Cited
US5081051A
Cited
US5036015A
Cited
US5069002A
Cited
US5220405A
Cited
US5297365A
Cited
US5324381A
Cited
US5216843A
Cited
US5384986A
Cited
US5232875A
Cited
US5272117A
Cited
US5456627A
Cited
US5486131A
Cited
US5531635A
Cited
US5461007A
Cited
US5483568A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2001-08-31 | 2002-03-02 | 2002-09-01 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-08-31 | 2006-03-02 | 2006-09-01 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-08-31 | 2010-03-02 | 2010-09-01 | $7700.00 | Window Closed / Lapsed |