US4879258A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Integrated circuit planarization by mechanical polishing
Assignee: Texas Instruments Inc
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Filing: 1988-08-31
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Granted: 1989-11-07
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Expires: 2008-08-31
Abstract
Abstract A process for planarizing the surface of a semiconductor wafer, after the wafer has been processed to form nonplanar topography layers on the blank, polished wafer, by mechanically removing material from this surface by abrasion until a desired planarity is attained. The mechanical planarization prevents step coverage problems encountered in further processing, avoids multiple step prior art planarizing methods, and can be effectively controlled by several simple methods.
Inventors
- 👤 Wayne G. Fisher
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 18:28
CPC Classifications
B; B24; B24B; B24B37/00; B24B37/04; B24B49/00; B24B49/02; B24B49/04; H; H10; H10P; H10P95/00; H10P95/06; H10P95/062; H10W; H10W20/00; H10W20/01; H10W20/071; H10W20/092; Y; Y10; Y10S; Y10S438/00; Y10S438/959
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
100 words
A process for producing a substantially planar surface on a semiconductor wafer after said wafer has been polished and subsequent processing has been accomplished which results in a nonplanar surface, comprising the steps of: contacting said nonplanar surface of said wafer to an abrasive by a substantially constant pressure; moving said wafer and said abrasive relative to each other for a time period while maintaining said substantially constant pressure to cause mechanical removal of material from said wafer; monitoring the composition of said removed material, and; releasing said wafer and said abrasive from contact when a predetermined composition is detected.
Claim 2
Dependent Claim
100 words
A process for producing a substantially planar surface on a semiconductor wafer after said wafer has been polished and subsequent processing has been accomplished which results in a nonplanar surface, comprising the steps of: contacting said nonplanar surface of said wafer to an abrasive by a substantially constant pressure; moving said wafer and said abrasive relative to each other for a time period while maintaining said substantially constant pressure to cause mechanical removal of material from said wafer; monitoring the composition of said removed material, and; releasing said wafer and said abrasive from contact when a predetermined composition is detected.
Claim 3
Dependent Claim
13 words
The process of claim 1 wherein said abrasive means is an abrasive disc.
Claim 4
Dependent Claim
12 words
The process of claim 2 wherein said abrasive disc is substantially glass.
Claim 5
Dependent Claim
12 words
The process of claim 1 wherein said abrasive is a pointed stylus.
Claim 6
Dependent Claim
13 words
The process of claim 4 wherein said pointed stylus is a diamond-tipped stylus.
Claim 7
Dependent Claim
20 words
The process of claim 1 wherein said wafer includes at least one conductive layer and at least one insulator layer.
Claim 8
Dependent Claim
12 words
The process of claim 6 wherein said conductive layer is substantially metal.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-11-06 | 1993-05-08 | 1993-11-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-11-06 | 1997-05-08 | 1997-11-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-11-06 | 2001-05-08 | 2001-11-07 | $7700.00 | Window Closed / Lapsed |