US5081051A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for conditioning the surface of a polishing pad
Assignee: Intel Corp
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Filing: 1990-09-12
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Granted: 1992-01-14
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Expires: 2010-09-12
Abstract
Abstract An improved method for conditioning the surface of a pad for polishing a dielectric layer formed on a semiconductor substrate is disclosed. In one embodiment, the serrated edge of an elongated blade member is first placed in radial contact with the surface of the polishing pad. The table and the pad are then rotated relative to the blade member. At the same time, the blade member is pressed downwardly against the pad surface such that the serrated edge cuts a plurality of substantially circumferential grooves into the pad surface. These grooves are dimensioned so as to facilitate the polishing process by creating point contacts which increases the pad area and allows more slurry to applied to the substrate per unit area. Depending on the type of pad employed, the number of teeth per inch on the serrated edge, the type of slurry used, etc., the downward force applied to the blade member in the rotational speed of the table are optimized to obtain the resultant polishing rate and uniformity desired.
Inventors
- 👤 Wayne A. Mattingly
- 👤 Seiichi Morimoto
- 👤 Spencer E. Preston
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 10:53
CPC Classifications
B; B24; B24B; B24B53/00; B24B53/017
Claims Analysis
Total Claims: 20
Claim 1
Independent Claim
173 words
In a process for polishing a dielectric layer formed on the semiconductor substrate, said process utilizing an apparatus which includes a rotatable table covered with a pad, a means for coating the surface of said pad with an abrasive slurry, and a means for forcibly pressing said substrate against said surface such that rotation of movement of said table relative to said substrate results in planarization of said dielectric layer, a method of conditioning said surface to improve the polishing characteristics of said process comprising the steps of: placing the serrated edge of an elongated blade member in radial contact with said surface of said pad, said blade member being at least as wide as the width of the path traversed by said substrate across said pad during said polishing process; rotating said table relative to said blade member while simultaneously pressing said substrate against said pad such that said serrated edge cuts a plurality of substantially circumferential grooves into said surface, said grooves being dimensioned so as to facilitate said polishing process.
Claim 2
Dependent Claim
173 words
In a process for polishing a dielectric layer formed on the semiconductor substrate, said process utilizing an apparatus which includes a rotatable table covered with a pad, a means for coating the surface of said pad with an abrasive slurry, and a means for forcibly pressing said substrate against said surface such that rotation of movement of said table relative to said substrate results in planarization of said dielectric layer, a method of conditioning said surface to improve the polishing characteristics of said process comprising the steps of: placing the serrated edge of an elongated blade member in radial contact with said surface of said pad, said blade member being at least as wide as the width of the path traversed by said substrate across said pad during said polishing process; rotating said table relative to said blade member while simultaneously pressing said substrate against said pad such that said serrated edge cuts a plurality of substantially circumferential grooves into said surface, said grooves being dimensioned so as to facilitate said polishing process.
Claim 3
Dependent Claim
27 words
The method of claim 1 wherein said serrated edge of said blade comprises a plurality of triangularly shaped teeth numbering between 18 and 32 teeth per inch.
Claim 4
Dependent Claim
24 words
The method of claim 2 wherein said blade comprises a metal alloy selected from the group consisting essentially of: molybdenum, tungsten carbide, or carbon.
Claim 5
Dependent Claim
27 words
The method of claim 3 wherein said serrated edge of said blade and the portion of said pad rotating toward said blade member form an acute angle.
Claim 6
Dependent Claim
13 words
The method of claim 4 wherein said acute angle is approximately 70 degrees.
Claim 7
Dependent Claim
14 words
The method of claim 5 wherein said rotating step lasts for approximately two minutes.
Claim 8
Dependent Claim
37 words
The method of claim 6 wherein said blade member is pressed against said pad surface with the pressure in the range of 5-20 pounds while said table rotates at a speed in the range of 10-30 rpms.
Claim 9
Dependent Claim
15 words
The method of claim 7 wherein said pad is of a type which is nonperforated.
Claim 10
Dependent Claim
141 words
In a polishing process utilizing an apparatus which forcibly presses a semiconductor substrate against a pad coated with an abrasive material, said pad in said substrate being set in relative movements to one another to facilitate planarization of a dielectric layer formed on said substrate, a method of conditioning the surface of said pad and comprising the steps of: (a) placing a blade member having a serrated edge on said pad such that said serrated edge contacts said surface of said pad; (b) rotating said pad relative to said blade member; and (c) forcibly pressing said blade member against said pad such that said serrated edge cuts a plurality of substantially circumferential grooves into said surface, said grooves being dimensioned so as to channel said slurry beneath said substrate during polishing, thereby enhancing the polishing rate and uniformity of said process.
Claim 11
Dependent Claim
141 words
In a polishing process utilizing an apparatus which forcibly presses a semiconductor substrate against a pad coated with an abrasive material, said pad in said substrate being set in relative movements to one another to facilitate planarization of a dielectric layer formed on said substrate, a method of conditioning the surface of said pad and comprising the steps of: (a) placing a blade member having a serrated edge on said pad such that said serrated edge contacts said surface of said pad; (b) rotating said pad relative to said blade member; and (c) forcibly pressing said blade member against said pad such that said serrated edge cuts a plurality of substantially circumferential grooves into said surface, said grooves being dimensioned so as to channel said slurry beneath said substrate during polishing, thereby enhancing the polishing rate and uniformity of said process.
Claim 12
Dependent Claim
20 words
The method of claim 9 further comprising the step of: repeating steps (a)-(c) for the next substrate to be processed.
Claim 13
Dependent Claim
27 words
The method of claim 9 wherein said serrated edge of said blade comprises a plurality of triangularly shaped teeth numbering between 18 and 32 teeth per inch.
Claim 14
Dependent Claim
24 words
The method of claim 11 wherein said blade comprises a metal alloy selected from the group consisting essentially of: molybdenum, tungsten carbide, or carbon.
Claim 15
Dependent Claim
27 words
The method of claim 12 wherein said serrated edge of said blade and the portion of said pad rotating toward said blade member form an acute angle.
Claim 16
Dependent Claim
13 words
The method of claim 13 wherein said acute angle is approximately 70 degrees.
Claim 17
Dependent Claim
14 words
The method of claim 14 wherein said rotating step lasts for approximately two minutes.
Claim 18
Dependent Claim
37 words
The method of claim 15 wherein said blade member is pressed against said pad surface with the pressure in the range of 5-20 pounds while said table rotates at a speed in the range of 10-30 rpms.
Claim 19
Dependent Claim
15 words
The method of claim 16 wherein said pad is of a type which is nonperforated.
Claim 20
Dependent Claim
31 words
The method of claim 17 wherein said blade member is at least as wide as the width of the path traversed by said substrate across said pad during said polishing process.
References Cited (Backward Citations)
US4213277A
Cited
US4947598A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-01-13 | 1995-07-15 | 1996-01-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-01-13 | 1999-07-15 | 2000-01-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-01-13 | 2003-07-15 | 2004-01-14 | $7700.00 | Window Closed / Lapsed |