Process for polishing and analyzing a layer over a patterned semiconductor substrate

Claim 2

A process for polishing a layer over a patterned semiconductor substrate comprising the steps of: forming the layer over the patterned semiconductor substrate, wherein the layer has a first exposed surface and is an uppermost layer over the substrate; polishing the layer to form a second exposed surface; and analyzing the second exposed surface, wherein: a radiation beam is directed towards the second exposed surface at a first angle relative to the second exposed surface; the layer is opaque to the radiation beam; at least a portion of the radiation beam is reflected away from the second exposed surface to form a reflected beam; the reflected beam is at a second angle relative to the second exposed surface, wherein the second angle is within five degrees of a supplementary angle of the first angle; a detector analyzes the reflected beam to determine a detected intensity; and the step of polishing is repeated if the detected intensity is lower than a threshold intensity.

Claim 3

The process of claim 1, wherein step of irradiating is performed while a liquid contacts the second exposed surface.

Claim 4

The process of claim 1, further comprising polishing the layer for a fixed time after the detected intensity is at least as high as the threshold intensity.

Claim 5

The process of claim 1, wherein the step of analyzing is performed before slurry particles are removed.

Claim 6

A process for polishing a layer over a patterned semiconductor substrate comprising the steps of: forming the layer over the patterned semiconductor substrate, wherein the layer has a first exposed surface and an edge; polishing the layer to form a second exposed surface; and analyzing the second exposed surface, wherein: a radiation beam is directed towards the second exposed surface; at least a portion of the radiation beam is reflected away from the second exposed surface to form a primary reflected beam; if the edge is still present, at least a portion of the primary reflected beam is reflected away from the edge to form a secondary reflected beam; a detector determines whether the secondary reflected beam is present; and the step of polishing is repeated if the detector determines that the secondary reflected beam is present.

Claim 7

A process for polishing a layer over a patterned semiconductor substrate comprising the steps of: forming the layer over the patterned semiconductor substrate, wherein the layer has a first exposed surface and an edge; polishing the layer to form a second exposed surface; and analyzing the second exposed surface, wherein: a radiation beam is directed towards the second exposed surface; at least a portion of the radiation beam is reflected away from the second exposed surface to form a primary reflected beam; if the edge is still present, at least a portion of the primary reflected beam is reflected away from the edge to form a secondary reflected beam; a detector determines whether the secondary reflected beam is present; and the step of polishing is repeated if the detector determines that the secondary reflected beam is present.

Claim 8

The process of claim 5, wherein step of irradiating is performed while a liquid contacts the second exposed surface.

Claim 9

The process of claim 5, further comprising polishing the layer for a fixed time after the detector determines that the secondary reflected beam is not present.

Claim 10

The process of claim 5, wherein the step of analyzing is performed before slurry particles are removed.

Claim 11

The process of claim 5, wherein the step of analyzing is performed using a radiation scattering analyzer.

Claim 12

The process of claim 5, wherein: the radiation beam and the primary reflected beam lie along a plane; and as seen by a top view of the substrate, the secondary reflected beam is at an angle that is in a range of 80-100 degrees from the plane.

Claim 13

A process for polishing a layer over a patterned semiconductor substrate comprising the steps of: forming the layer over the patterned semiconductor substrate, wherein the layer has a first exposed surface having a first topography; polishing the layer to form a second exposed surface having a second topography; and analyzing the second exposed surface with a radiation beam to detect topography changes along the second exposed surface, wherein the step of polishing is repeated if a topography change along the second exposed surface is detected, wherein: the radiation beam is directed towards the second exposed surface; at least a portion of the radiation beam is reflected away from the second exposed surface to form a primary reflected beam; the radiation beam and primary reflected beam lie along a plane; if an edge is present within the second exposed surface, at least a portion of the primary reflected beam is reflected away from the edge to form a secondary reflected beam; and as seen by a top view of the substrate, the secondary reflected beam is at an angle that is in a range of 80-100 degrees from the plane.

Claim 14

A process for polishing a layer over a patterned semiconductor substrate comprising the steps of: forming the layer over the patterned semiconductor substrate, wherein the layer has a first exposed surface having a first topography; polishing the layer to form a second exposed surface having a second topography; and analyzing the second exposed surface with a radiation beam to detect topography changes along the second exposed surface, wherein the step of polishing is repeated if a topography change along the second exposed surface is detected, wherein: the radiation beam is directed towards the second exposed surface; at least a portion of the radiation beam is reflected away from the second exposed surface to form a primary reflected beam; the radiation beam and primary reflected beam lie along a plane; if an edge is present within the second exposed surface, at least a portion of the primary reflected beam is reflected away from the edge to form a secondary reflected beam; and as seen by a top view of the substrate, the secondary reflected beam is at an angle that is in a range of 80-100 degrees from the plane.

Claim 15

The process of claim 11, wherein step of analyzing is performed while a liquid contacts the second exposed surface.

Claim 16

The process of claim 11, wherein the step of analyzing is performed using a radiation scattering analyzer.

Claim 17

The process of claim 11, wherein the step of analyzing forms an output that does not include: information related to direction and magnitude of topography changes along the second exposed surface; and thickness of the layer.

Claim 18

The process of claim 11, wherein: the layer is transparent; and the step of polishing does not expose any portion of the substrate.

Claim 19

The process of claim 11, wherein: the layer is opaque; and the step of polishing does not expose any portion of the substrate.

Claim 20

A process for polishing a layer over a patterned semiconductor substrate comprising the steps of: forming the layer over the patterned semiconductor substrate, wherein the layer has a first exposed surface having a first topography with an edge; analyzing the first topography with a radiation beam to form a first topographic output, wherein: the radiation beam is directed towards the first exposed surface; at least a portion of the radiation beam is reflected away from the first exposed surface to form a primary reflected beam of the first topography: the radiation beam and primary reflected of the first topography lie along a plane; at least a portion of the primary reflected beam of the first topography is reflected away from the edge to form a secondary reflected beam; and as seen by a top view of the substrate, the secondary reflected beam is at an angle that is in a range of 80-100 degrees from the plane; polishing the layer to form a second exposed surface having a second topography; analyzing the second topography with a radiation beam to form a second topographic output, wherein: the radiation beam is directed towards the second exposed surface; at least a portion of the radiation beam is reflected away from the second exposed surface to form a primary reflected beam of the second topography; the radiation beam and primary reflected beam of the second topography lie along a plane; if an edge is present within the second exposed surface, at least a portion of the primary reflected beam of the second topography is reflected away from the edge to form a secondary reflected beam of the second topography; and as seen by a top view of the substrate, the secondary reflected beam of the second topography is at an angle that is in a range of 80-100 degrees from the plane; and comparing the first and second topographic outputs, wherein the step of polishing is repeated if the second topographic output lies within a tolerance the first topographic output.

Claim 21

A process for polishing a layer over a patterned semiconductor substrate comprising the steps of: forming the layer over the patterned semiconductor substrate, wherein the layer has a first exposed surface having a first topography with an edge; analyzing the first topography with a radiation beam to form a first topographic output, wherein: the radiation beam is directed towards the first exposed surface; at least a portion of the radiation beam is reflected away from the first exposed surface to form a primary reflected beam of the first topography: the radiation beam and primary reflected of the first topography lie along a plane; at least a portion of the primary reflected beam of the first topography is reflected away from the edge to form a secondary reflected beam; and as seen by a top view of the substrate, the secondary reflected beam is at an angle that is in a range of 80-100 degrees from the plane; polishing the layer to form a second exposed surface having a second topography; analyzing the second topography with a radiation beam to form a second topographic output, wherein: the radiation beam is directed towards the second exposed surface; at least a portion of the radiation beam is reflected away from the second exposed surface to form a primary reflected beam of the second topography; the radiation beam and primary reflected beam of the second topography lie along a plane; if an edge is present within the second exposed surface, at least a portion of the primary reflected beam of the second topography is reflected away from the edge to form a secondary reflected beam of the second topography; and as seen by a top view of the substrate, the secondary reflected beam of the second topography is at an angle that is in a range of 80-100 degrees from the plane; and comparing the first and second topographic outputs, wherein the step of polishing is repeated if the second topographic output lies within a tolerance the first topographic output.

Claim 22

The process of claim 17, wherein step of analyzing the second exposed surface is performed while a liquid contacts the second exposed surface.

Claim 23

The process of claim 17, wherein the radiation beam is generated by a laser of a radiation scattering analyzer.

Claim 24

The process of claim 17, wherein both of the first and second topographic outputs do not include information related to thickness of the layer.

Claim 25

A process for polishing a layer over a patterned semiconductor substrate comprising the steps of: forming the layer over the patterned semiconductor substrate, wherein the layer has a first exposed surface; polishing the layer to form a second exposed surface with a slurry having slurry particles; analyzing the second exposed surface with a radiation beam, wherein: the radiation beam is directed towards the second exposed surface; at least a portion of the radiation beam is reflected away from the second exposed surface to form a primary reflected beam; the radiation beam and primary reflected beam lie along a plane; if an edge is present within the second exposed surface, at least a portion of the primary reflected beam is reflected away from the edge to form a secondary reflected beam; as seen by a top view of the substrate, the secondary reflected beam is at an angle that is in a range of 80-100 degrees from the plane; and this step is performed prior to removing the slurry particles and drying the substrate and after the step of polishing; and drying the substrate after the step of analyzing.

Claim 26

A process for polishing a layer over a patterned semiconductor substrate comprising the steps of: forming the layer over the patterned semiconductor substrate, wherein the layer has a first exposed surface; polishing the layer to form a second exposed surface with a slurry having slurry particles; analyzing the second exposed surface with a radiation beam, wherein: the radiation beam is directed towards the second exposed surface; at least a portion of the radiation beam is reflected away from the second exposed surface to form a primary reflected beam; the radiation beam and primary reflected beam lie along a plane; if an edge is present within the second exposed surface, at least a portion of the primary reflected beam is reflected away from the edge to form a secondary reflected beam; as seen by a top view of the substrate, the secondary reflected beam is at an angle that is in a range of 80-100 degrees from the plane; and this step is performed prior to removing the slurry particles and drying the substrate and after the step of polishing; and drying the substrate after the step of analyzing.

Claim 27

The process of claim 21, further comprising a step of removing the slurry particles from the substrate prior to the step of analyzing.

Claim 28

The process of claim 21, further comprising a step of removing slurry particles between the steps of analyzing and drying.

Claim 29

The process of claim 21, further comprising a step of analyzing the first exposed surface prior to the step of polishing, wherein this step is performed while a liquid contacts the layer.

Claim 30

The process of claim 21, wherein the steps of polishing and analyzing are performed while water contacts the layer.

Claim 31

The process of claim 21, wherein the steps of polishing and analyzing are performed in a polisher.

Claim 32

A process for polishing a layer over a patterned semiconductor substrate comprising the steps of: forming the layer over the patterned semiconductor substrate, wherein the layer has a first exposed surface; polishing the layer to form a second exposed surface; and analyzing the second exposed surface, wherein: a spectral incident radiation beam is directed towards the second exposed surface; at least a portion of the spectral incident radiation beam is reflected away from the second exposed surface to form a reflected beam; a detector analyzes the reflected beam to whether reflected beam is polarized; and the step of polishing is repeated if the reflected beam is polarized.

Claim 33

A process for polishing a layer over a patterned semiconductor substrate comprising the steps of: forming the layer over the patterned semiconductor substrate, wherein the layer has a first exposed surface; polishing the layer to form a second exposed surface; and analyzing the second exposed surface, wherein: a spectral incident radiation beam is directed towards the second exposed surface; at least a portion of the spectral incident radiation beam is reflected away from the second exposed surface to form a reflected beam; a detector analyzes the reflected beam to whether reflected beam is polarized; and the step of polishing is repeated if the reflected beam is polarized.

Claim 34

The process of claim 27, wherein the layer is opaque to the spectral incident radiation beam.

Claim 35

A process for polishing a layer over a patterned semiconductor substrate comprising the steps of: forming the layer over the patterned semiconductor substrate, wherein the layer has a first exposed surface; polishing the layer to form a second exposed surface; and analyzing the second exposed surface, wherein: a spectral incident radiation beam is directed towards the second exposed surface; at least a portion of the spectral incident radiation beam is reflected away from the second exposed surface to form a reflected beam; a detector analyzes the reflected beam to whether the reflected beam is spectral; and the step of polishing is repeated if the reflected beam is not spectral.

Claim 36

A process for polishing a layer over a patterned semiconductor substrate comprising the steps of: forming the layer over the patterned semiconductor substrate, wherein the layer has a first exposed surface; polishing the layer to form a second exposed surface; and analyzing the second exposed surface, wherein: a spectral incident radiation beam is directed towards the second exposed surface; at least a portion of the spectral incident radiation beam is reflected away from the second exposed surface to form a reflected beam; a detector analyzes the reflected beam to whether the reflected beam is spectral; and the step of polishing is repeated if the reflected beam is not spectral.

Claim 37

The process of claim 29, wherein the layer is opaque to the spectral incident radiation beam.