Semi-insulating wafer

Claim 2

A bonded wafer with a semi-insulating layer for reducing losses and crosstalk at high frequencies comprising: a handle substrate having a noninsulating upper surface; a planar semi-insulating layer on the noninsulating upper surface of the handle wafer for reducing losses and crosstalk at high frequencies; a planar insulating layer on the planar semi-insulating layer; and a device layer of monocrystalline silicon on the insulating layer.

Claim 3

The bonded wafer of claim 1 wherein the handle wafer is doped and has a resistivity in the range of 1-10,000 ohm-cm.

Claim 4

The bonded wafer of claim 1 wherein the handle wafer has a resistivity of under one ohm-cm.

Claim 5

The bonded wafer of claim 1 wherein the semi-insulating layer comprises a member selected from the group consisting of diamond, silicon carbide and gallium arsenide.

Claim 6

The bonded wafer of claim 1 wherein the semi-insulating layer comprises one of the group consisting of polycrystalline silicon, amorphous silicon, SIPOS, and FIPOS.

Claim 7

The bonded wafer of claim 1 wherein the insulating layer is silicon dioxide.

Claim 8

The bonded wafer of claim 1 wherein the semi-insulating layer is thick enough to reduce substrate losses for frequencies above 1 GHz.

Claim 9

The bonded wafer of claim 1 wherein the semi-insulating layer is thin enough to reduce cross-talk between circuit elements for frequencies above 1 GHz.

Claim 10

The bonded wafer of claim 1 further comprising a thermal and electrical conductive barrier layer between the handle wafer and the semi-insulating layer.

Claim 11

The bonded wafer of claim 9 wherein the barrier layer comprises a silicided epitaxial layer.

Claim 12

The bonded wafer of claim 9 wherein the barrier layer includes a metal layer.

Claim 13

The bonded wafer of claim 1 wherein the semi-insulating layer is thicker than the insulating layer.

Claim 14

The bonded wafer of claim 1 wherein the semi-insulating layer is less than 6 times as wide as the smallest device.

Claim 15

The bonded wafer of claim 1 wherein the device layer comprises a plurality of devices and the semi-insulating layer is thicker than the insulating layer but less than 6 times as wide as the smallest device in the device layer.

Claim 16

The bonded wafer of claim 1 wherein the device wafer comprises monocrystalline silicon.

Claim 17

The bonded wafer of claim 1 wherein the semi-insulating layer comprises polycrystaline silicon.

Claim 18

The bonded wafer of claim 1 wherein the semi-insulating layer is thick enough to reduce resistivity losses but not so thick as to adversely affect crosstalk by reducing shielding.

Claim 19

A bonded wafer structure with a semi-insulating layer for reducing losses and crosstalk at high frequencies comprising: a handle substrate of monocrystalline silicon having a noninsulating upper surface; a semi-insulating layer of polysilicon on the noninsulating upper surface of the handle wafer; an insulating layer of silicon dioxide on the semi-insulating layer; and a device layer of monocrystalline silicon on the insulating layer.

Claim 20

A bonded wafer structure with a semi-insulating layer for reducing losses and crosstalk at high frequencies comprising: a handle substrate of monocrystalline silicon having a noninsulating upper surface; a semi-insulating layer of polysilicon on the noninsulating upper surface of the handle wafer; an insulating layer of silicon dioxide on the semi-insulating layer; and a device layer of monocrystalline silicon on the insulating layer.

Claim 21

The bonded wafer structure of claim 18 further comprising an epitaxial layer of silicon disposed on the surface of the handle substrate and between the handle wafer and the semi-insulating layer of polysilicon.

Claim 22

A substrate for carrying high frequency signals comprising: a device layer of monocrystalline semiconductor material including integrated devices forming an integrated circuit, said devices being spaced from each other a first distance; an planar upper substrate having a first resistivity for supporting the device layer and a controlled upper substrate thickness for controlling resistance losses due to high frequency signals at or above at least 1 GHz; a planar lower substrate having a noninsulating upper surface and a second resistivity for supporting the upper substrate and for suppressing crosstalk between devices in said device layer in inverse proportion to the distance between the device layer and the lower substrate; wherein the first resistivity is greater than the second resistivity and the thickness of the upper substrate is about the same or less than the width of the smallest active circuit devices and the device layer is on an upper surface of the upper substrate and the upper substrate is on the upper surface of the lower substrate.

Claim 23

A substrate for carrying high frequency signals comprising: a device layer of monocrystalline semiconductor material including integrated devices forming an integrated circuit, said devices being spaced from each other a first distance; an planar upper substrate having a first resistivity for supporting the device layer and a controlled upper substrate thickness for controlling resistance losses due to high frequency signals at or above at least 1 GHz; a planar lower substrate having a noninsulating upper surface and a second resistivity for supporting the upper substrate and for suppressing crosstalk between devices in said device layer in inverse proportion to the distance between the device layer and the lower substrate; wherein the first resistivity is greater than the second resistivity and the thickness of the upper substrate is about the same or less than the width of the smallest active circuit devices and the device layer is on an upper surface of the upper substrate and the upper substrate is on the upper surface of the lower substrate.

Claim 24

The bonded wafer of claim 20 wherein the first resistivity is at least ten times as high as the second resistivity.

Claim 25

A bonded wafer structure with a semi-insulating layer for reducing losses and crosstalk at frequencies above 1 GHz comprising: a first layer of monocrystalline silicon; a barrier layer on the first layer of monocrystalline silicon; a semi-insulating layer of polysilicon on the barrier layer; an insulating layer of silicon dioxide on the semi-insulating layer; and a device layer of monocrystalline silicon on the semi-insulating layer.

Claim 26

A bonded wafer structure with a semi-insulating layer for reducing losses and crosstalk at frequencies above 1 GHz comprising: a first layer of monocrystalline silicon; a barrier layer on the first layer of monocrystalline silicon; a semi-insulating layer of polysilicon on the barrier layer; an insulating layer of silicon dioxide on the semi-insulating layer; and a device layer of monocrystalline silicon on the semi-insulating layer.

Claim 27

The bonded wafer structure 22 wherein the barrier layer comprises a layer of silicided epitaxial monocrystalline silicon.

Claim 28

The bonded wafer structure 22 wherein the barrier layer comprises a layer of silicided epitaxial monocrystalline silicon.

Claim 29

The bonded wafer of claim 23 wherein the barrier layer is metal.