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US5767543A
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Ferroelectric semiconductor device having a layered ferroelectric structure
Assignee: NXP USA Inc
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Filing: 1996-09-16
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Granted: 1998-06-16
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Expires: 2016-09-16
Abstract
Abstract A layered bismuth ferroelectric structure (12) and a method for forming the bismuth layered ferroelectric structure (12). A monolayer (12A) of bismuth is formed in intimate contact with a single crystalline semiconductor material (11). A layered ferroelectric material (12) is grown on the monolayer (12A) of bismuth such that the monolayer (12A) of bismuth becomes a part of the layered ferroelectric material (12). The ferroelectric material (12) forms a layered ferroelectric material which is not a pure perovskite, wherein the crystalline structure at the interface between the single crystalline semiconductor material (11) and the monolayer (12A) of bismuth are substantially the same.
Inventors
- 👤 William J. Ooms
- 👤 Daniel S. Marshall
- 👤 Jerald A. Hallmark
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 09:36
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6938; H10P14/69398; H10D; H10D1/00; H10D1/60; H10D1/68; H10D1/682; H10D1/684; H10D64/00; H10D64/60; H10D64/66; H10D64/68; H10D64/689; H10P14/40; H10P14/42; H10P14/43; H10P14/44; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6332; H10P14/6334
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
82 words
A layered bismuth ferroelectric structure, comprising: a monocrystalline semiconductor substrate; and an epitaxial layer of ferroelectric material comprising bismuth (Bi) disposed on the monocrystalline semiconductor substrate, wherein the epitaxial layer of ferroelectric material has substantially a same atomic spacing as the monocrystalline semiconductor substrate, comprises a layer of Bi 2 O 2 in intimate contact with the monocrystalline semiconductor substrate, and is between the monocrystalline semiconductor substrate and at least one layer of bismuth titanate (Bi 4 Ti 3 O 12 ).
Claim 2
Dependent Claim
82 words
A layered bismuth ferroelectric structure, comprising: a monocrystalline semiconductor substrate; and an epitaxial layer of ferroelectric material comprising bismuth (Bi) disposed on the monocrystalline semiconductor substrate, wherein the epitaxial layer of ferroelectric material has substantially a same atomic spacing as the monocrystalline semiconductor substrate, comprises a layer of Bi 2 O 2 in intimate contact with the monocrystalline semiconductor substrate, and is between the monocrystalline semiconductor substrate and at least one layer of bismuth titanate (Bi 4 Ti 3 O 12 ).
Claim 3
Dependent Claim
22 words
The layered bismuth ferroelectric structure of claim 1, further including a monolayer of bismuth in intimate contact with the monocrystalline semiconductor substrate.
Claim 4
Dependent Claim
102 words
A ferroelectric semiconductor device, comprising: a semiconductor material of a first conductivity type and having a major surface, the semiconductor material being monocrystalline; an epitaxial layer disposed over the major surface, the epitaxial layer comprising an oxide of thallium (Tl), bismuth (Bi), lead (Pb), or tellurium (Te); an epitaxial ferroelectric layer disposed over the epitaxial layer, wherein the epitaxial ferroelectric layer has first and second edges; a gate electrode disposed over the epitaxial ferroelectric layer; a first doped region adjacent the first edge of the epitaxial ferroelectric layer; and a second doped region adjacent the second edge of the epitaxial ferroelectric layer.
Claim 5
Dependent Claim
102 words
A ferroelectric semiconductor device, comprising: a semiconductor material of a first conductivity type and having a major surface, the semiconductor material being monocrystalline; an epitaxial layer disposed over the major surface, the epitaxial layer comprising an oxide of thallium (Tl), bismuth (Bi), lead (Pb), or tellurium (Te); an epitaxial ferroelectric layer disposed over the epitaxial layer, wherein the epitaxial ferroelectric layer has first and second edges; a gate electrode disposed over the epitaxial ferroelectric layer; a first doped region adjacent the first edge of the epitaxial ferroelectric layer; and a second doped region adjacent the second edge of the epitaxial ferroelectric layer.
Claim 6
Dependent Claim
18 words
The ferroelectric semiconductor device of claim 3, wherein the epitaxial metal layer includes a bismuth (Bi) layered ferroelectric.
Claim 7
Dependent Claim
51 words
The ferroelectric semiconductor device of claim 4, wherein the epitaxial metal layer further includes a ferroelectric material selected from the group consisting of bismuth titanate (Bi 4 Ti 3 O 12 ), strontium bismuth tantalate (Bi 2 SrTa 3 O 9 ), and bismuth titanium niobate (Bi 3 TiNbO 9 ).
Claim 8
Dependent Claim
42 words
The ferroelectric semiconductor device of claim 3, wherein the epitaxial metal layer further includes a bismuth layered ferroelectric having at least one layer of Bi 2 O 2 between the at least one layer of bismuth layered ferroelectric and the semiconductor material.
Claim 9
Dependent Claim
51 words
The ferroelectric semiconductor device of claim 6, wherein the epitaxial ferroelectric layer further includes a ferroelectric material selected from the group consisting of bismuth titanate (Bi 4 Ti 3 O 12 ), strontium bismuth tantalate (Bi 2 SrTa 3 O 9 ), and bismuth titanium niobate (Bi 3 TiNbO 9 ).
Claim 10
Dependent Claim
20 words
The ferroelectric semiconductor device of claim 13, wherein the first and second doped regions are of a second conductivity type.
Claim 11
Dependent Claim
73 words
A layered bismuth ferroelectric structure, comprising: a monocrystalline semiconductor substrate; and an epitaxial layer of ferroelectric material comprising bismuth (Bi) disposed on the monocrystalline semiconductor substrate, wherein the epitaxial layer of ferroelectric material has substantially a same atomic spacing as the monocrystalline semiconductor substrate, comprises a layer of Bi 2 O 2 in intimate contact with the monocrystalline semiconductor substrate, and is between the monocrystalline semiconductor substrate and another layer of ferroelectric material.
Claim 12
Dependent Claim
73 words
A layered bismuth ferroelectric structure, comprising: a monocrystalline semiconductor substrate; and an epitaxial layer of ferroelectric material comprising bismuth (Bi) disposed on the monocrystalline semiconductor substrate, wherein the epitaxial layer of ferroelectric material has substantially a same atomic spacing as the monocrystalline semiconductor substrate, comprises a layer of Bi 2 O 2 in intimate contact with the monocrystalline semiconductor substrate, and is between the monocrystalline semiconductor substrate and another layer of ferroelectric material.
Claim 13
Dependent Claim
30 words
The layered bismuth ferroelectric structure of claim 9, wherein the another layer of ferroelectric material comprises at least one layer of bismuth titanate (Bi 4 Ti 3 O 12 ).
Claim 14
Dependent Claim
22 words
The layer bismuth ferroelectric structure of claim 9, further including a monolayer of bismuth in intimate contact with the monocrystalline semiconductor substrate.
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