Patent US5753558A successfully refreshed from Google Patents.
US5753558A
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US
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Method of forming a capacitor
Assignee: Micron Technology Inc
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Filing: 1997-04-18
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Granted: 1998-05-19
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Expires: 2017-04-18
Abstract
Abstract A method of forming a capacitor includes, a) providing a substrate; b) etching into the substrate to provide a depression in the substrate, the depression having a sidewall which is angled from vertical; c) providing a conformal layer of hemispherical grain polysilicon within the depression and over the angled sidewall, the layer of hemispherical grain polysilicon less than completely filling the depression; and d) ion implanting the hemispherical grain polysilicon layer with a conductivity enhancing impurity. Preferred methods of providing the depression where the substrate comprises SiO 2 include a dry, plasma enhanced, anisotropic spacer etch utilizing reactant gases of CF 4 and CHF 3 provided to the substrate at a volumetric ratio of 1:1, and facet sputter etching.
Inventors
- 👤 Salman Akram
- 👤 Charles Turner
- 👤 Alan Laulusa
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 11:20
CPC Classifications
H; H10; H10D; H10D1/00; H10D1/60; H10D1/68; H10D1/692; H10D1/711; H10D1/712; H10P; H10P50/00; H10P50/20; H10P50/28; H10P50/282; H10P50/283; H10D1/716; H10W; H10W20/00; H10W20/01; H10W20/071; H10W20/081; H10W20/082; Y; Y10; Y10S; Y10S148/00; Y10S148/014; Y10S148/161; Y10S148/168; Y10S438/00; Y10S438/978
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
62 words
A method of forming a capacitor comprising the following steps: forming a depression in a substrate, the depression having a sidewall which is angled from vertical, the forming the depression comprising facet sputter etching; and forming a layer of hemispherical grain polysilicon within the depression and over the angled sidewall, the layer of hemispherical grain polysilicon less than completely filling the depression.
Claim 2
Independent Claim
62 words
A method of forming a capacitor comprising the following steps: forming a depression in a substrate, the depression having a sidewall which is angled from vertical, the forming the depression comprising facet sputter etching; and forming a layer of hemispherical grain polysilicon within the depression and over the angled sidewall, the layer of hemispherical grain polysilicon less than completely filling the depression.
Claim 3
Dependent Claim
29 words
The capacitor forming method of claim 1 wherein the step of forming the depression is conducted to produce a depression sidewall angle from vertical of from 10° to 40°.
Claim 4
Dependent Claim
30 words
The capacitor forming method of claim 1 wherein the substrate comprises an outer insulating layer selected from the group consisting of SiO 2 , Si 3 N 4 and BPSG.
Claim 5
Dependent Claim
15 words
The capacitor forming method of claim 1 wherein the substrate comprises an outer insulating layer.
Claim 6
Dependent Claim
16 words
The capacitor forming method of claim 1 wherein the substrate comprises an outer layer of polysilicon.
Claim 7
Dependent Claim
24 words
The capacitor forming method of claim 1 wherein the facet sputter etching forms a depression sidewall angle from vertical of from 20° to 40°.
Claim 8
Independent Claim
94 words
A method of forming a capacitor comprising the following steps: providing a substrate; etching into the substrate to provide a depression in the substrate, the depression having a sidewall which is angled from vertical: providing a conductive layer of hemispherical grain polysilicon within the depression and over the angled sidewall. the conductive laver of hemispherical grain polysilicon less than completely filling the depression: and wherein the providing of the conductive layer of hemispherical grain polysilicon comprises: depositing undoped hemispherical grain polysilicon; and ion implanting a conductivity enhancing dopant into the deposited hemispherical grain polysilicon.
Claim 9
Independent Claim
94 words
A method of forming a capacitor comprising the following steps: providing a substrate; etching into the substrate to provide a depression in the substrate, the depression having a sidewall which is angled from vertical: providing a conductive layer of hemispherical grain polysilicon within the depression and over the angled sidewall. the conductive laver of hemispherical grain polysilicon less than completely filling the depression: and wherein the providing of the conductive layer of hemispherical grain polysilicon comprises: depositing undoped hemispherical grain polysilicon; and ion implanting a conductivity enhancing dopant into the deposited hemispherical grain polysilicon.
Claim 10
Independent Claim
69 words
A method of forming a capacitor comprising the following steps: providing a substrate; forming a depression in the substrate, the depression having a sidewall which is angled from vertical; providing a layer of hemispherical grain polysilicon within the depression and over the angled sidewall, the layer of hemispherical grain polysilicon less than completely filling the depression; and ion implanting the hemispherical grain polysilicon layer with a conductivity enhancing impurity.
Claim 11
Independent Claim
69 words
A method of forming a capacitor comprising the following steps: providing a substrate; forming a depression in the substrate, the depression having a sidewall which is angled from vertical; providing a layer of hemispherical grain polysilicon within the depression and over the angled sidewall, the layer of hemispherical grain polysilicon less than completely filling the depression; and ion implanting the hemispherical grain polysilicon layer with a conductivity enhancing impurity.
Claim 12
Independent Claim
155 words
A method of forming a capacitor comprising the following steps: forming an insulative layer over a conductive pillar, the insulative layer having an uppermost surface; facet sputter etching through the insulative layer uppermost surface to provide a depression in the insulative layer, the depression exposing a surface of the conductive pillar, the depression having a sidewall which is angled from vertical from 20° to 40°, the depression sidewall joining the insulative layer uppermost surface and angling from the insulative layer uppermost surface at the angle from 20° to 40°; providing a conductive layer of hemispherical grain polysilicon within the depression and in contact with the exposed surface of the conductive pillar; the conductive layer of hemispherical grain polysilicon less than completely filling the depression; and wherein the providing of the conductive layer of hemispherical grain polysilicon comprises: depositing undoped hemispherical grain polysilicon; and ion implanting a conductivity enhancing dopant into the deposited hemispherical grain polysilicon.
Claim 13
Independent Claim
155 words
A method of forming a capacitor comprising the following steps: forming an insulative layer over a conductive pillar, the insulative layer having an uppermost surface; facet sputter etching through the insulative layer uppermost surface to provide a depression in the insulative layer, the depression exposing a surface of the conductive pillar, the depression having a sidewall which is angled from vertical from 20° to 40°, the depression sidewall joining the insulative layer uppermost surface and angling from the insulative layer uppermost surface at the angle from 20° to 40°; providing a conductive layer of hemispherical grain polysilicon within the depression and in contact with the exposed surface of the conductive pillar; the conductive layer of hemispherical grain polysilicon less than completely filling the depression; and wherein the providing of the conductive layer of hemispherical grain polysilicon comprises: depositing undoped hemispherical grain polysilicon; and ion implanting a conductivity enhancing dopant into the deposited hemispherical grain polysilicon.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2001-05-18 | 2001-11-17 | 2002-05-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-05-18 | 2005-11-17 | 2006-05-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-05-18 | 2009-11-17 | 2010-05-19 | $7700.00 | Window Closed / Lapsed |