US5245206A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Capacitors with roughened single crystal plates
Assignee: GlobalFoundries Inc
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Filing: 1992-05-12
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Granted: 1993-09-14
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Expires: 2012-05-12
Abstract
Abstract A capacitor is provided having a substrate and a first capacitor plate including a lattice mismatched crystalline material is formed over and supported by a surface of the substrate. A layer of insulating material is formed over and supported by the first capacitor plate. A second capacitor plate including a layer of conductive material is formed over and supported by the layer of insulating material.
Inventors
- 👤 Jack O. Chu
- 👤 Louis L. Hsu
- 👤 Toshio Mii
- 👤 Joseph F. Shepard
- 👤 Scott R. Stiffler
- 👤 Manu J. Tejwani
- 👤 Edward J. Vishnesky
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 09:15
CPC Classifications
H; H10; H10D; H10D1/00; H10D1/60; H10D1/68; H10D1/692; H10D1/711; H10D1/712; H10D1/62; H10D1/66; Y; Y10; Y10S; Y10S438/00; Y10S438/964
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
109 words
A capacitor comprising: a substrate of a first material; a first capacitor plate including a roughened layer of a crystalline material supported by a surface of said substrate, said crystalline material being lattice mismatched with respect to said first material and selected from the group including germanium, gallium arsenide and metal silicides; and said first capacitor plate further including a doped diffusion layer supporting said crystalline material and a second layer of conductive material supported by said crystalline material; a layer of insulating material supported by said first capacitor plate; and a second capacitor plate including a first layer of conductive material supported by said layer of insulating material.
Claim 2
Dependent Claim
109 words
A capacitor comprising: a substrate of a first material; a first capacitor plate including a roughened layer of a crystalline material supported by a surface of said substrate, said crystalline material being lattice mismatched with respect to said first material and selected from the group including germanium, gallium arsenide and metal silicides; and said first capacitor plate further including a doped diffusion layer supporting said crystalline material and a second layer of conductive material supported by said crystalline material; a layer of insulating material supported by said first capacitor plate; and a second capacitor plate including a first layer of conductive material supported by said layer of insulating material.
Claim 3
Dependent Claim
14 words
The capacitor of claim 1 wherein said first material comprises silicon or silicon dioxide.
Claim 4
Dependent Claim
48 words
The capacitor of claim 1 wherein: said crystalline material comprises germanium, having a thickness of less than about 300 angstroms; and said layer of insulating material and said second layer of conductive material are sufficiently thin to replicate the roughness of said roughened layer of second crystalline material.
Claim 5
Dependent Claim
24 words
The capacitor of claims 3 wherein said second layer of conductive material comprises a doped polysilicon layer having a thickness less than 600 angstroms.
Claim 6
Dependent Claim
44 words
The capacitor of claim 4 wherein said layer of insulating material is selected from the group comprising an oxide, a composite of oxide and nitride layers, and a composite of oxide, nitride, and oxide layers having a thickness of less than about 100 angstroms.
Claim 7
Dependent Claim
26 words
The capacitor of claim 1 and further including a semiconductor device connected to said capacitor for selectively storing and removing an electrical charge from said capacitor.
Claim 8
Dependent Claim
19 words
The capacitor of claim 1 wherein said surface of said substrate comprises a trench surface recessed within said substrate.
Claim 9
Dependent Claim
38 words
The capacitor of claim 7 wherein said trench includes sidewalls and a base and wherein at least a portion of said trench sidewalls are coated with a dielectric material and said first capacitor plate covers said dielectric material.
Claim 10
Dependent Claim
15 words
The capacitor of claim 1 wherein said surface of said substrate comprises a plateau surface.
References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-09-13 | 1997-03-15 | 1997-09-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-09-13 | 2001-03-15 | 2001-09-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-09-13 | 2005-03-15 | 2005-09-14 | $7700.00 | Window Closed / Lapsed |