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US5751626A Expired / Lapsed US ⏱️ 0.0 years remaining

Ferroelectric memory using ferroelectric reference cells

Assignee: Micron Technology Inc
•
Filing: 1997-03-27
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Granted: 1998-05-12
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Expires: 2017-03-27
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Abstract

Abstract A random access memory circuit is described which uses single ferroelectric memory cells to store data. The ferroelectric memory cells can be selectively read using reference cells to generate a reference voltage which is compared to a voltage representative of data stored on the memory cell using a multiplexed sense amplifier. In using two ferroelectric reference cells in which one contains a logical 0 polarization, and the other contains a logical 1 polarization, a single-ended reference voltage can be generated on a reference bit line. A ferroelectric memory cell can then be read by comparing the voltage on its corresponding bit line to the reference bit line using the sense amplifier. The content of the memory cell being read and the content of the reference cells can be rewritten on the same clock cycles to save on access time.

Inventors

  • 👤 Mirmajid Seyyedy

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-09 01:55
CPC Classifications
G; G11; G11C; G11C11/00; G11C11/21; G11C11/22

Claims Analysis

Total Claims: 16
Claim 1
Independent Claim 139 words
An integrated circuit memory comprising: an array of ferroelectric memory cells; a sense amplifier to sense and amplify data stored on the ferroelectric memory cells; a first pair of bit line sections coupled to the sense amplifier and ferroelectric memory cells; a second pair of bit line sections coupled to the sense amplifier and ferroelectric memory cells; a first reference circuit coupled to the first pair of bit line sections and having a plurality of ferroelectric reference cells for providing a first reference voltage; a second reference circuit coupled to the second pair of bit line sections and having a plurality of ferroelectric reference cells for providing a second reference voltage; and a third reference circuit coupled to the first pair of bit line sections, the third reference circuit having a non-remnant capacitor circuit for providing a reference voltage.
Claim 2
Dependent Claim 139 words
An integrated circuit memory comprising: an array of ferroelectric memory cells; a sense amplifier to sense and amplify data stored on the ferroelectric memory cells; a first pair of bit line sections coupled to the sense amplifier and ferroelectric memory cells; a second pair of bit line sections coupled to the sense amplifier and ferroelectric memory cells; a first reference circuit coupled to the first pair of bit line sections and having a plurality of ferroelectric reference cells for providing a first reference voltage; a second reference circuit coupled to the second pair of bit line sections and having a plurality of ferroelectric reference cells for providing a second reference voltage; and a third reference circuit coupled to the first pair of bit line sections, the third reference circuit having a non-remnant capacitor circuit for providing a reference voltage.
Claim 3
Dependent Claim 36 words
The integrated circuit memory of claim 1 wherein the non-remnant capacitor circuit is comprised of a conductor line having a line capacitance, and a plurality of capacitors selectively coupled to the conductor line via access devices.
Claim 4
Dependent Claim 60 words
The integrated circuit memory of claim 1 wherein: the plurality of ferroelectric reference cells of each of the first and second reference circuits are an even number, and a first one-half of the plurality of ferroelectric reference cells are polarized in one state and a second one-half of the plurality of ferroelectric reference cells are polarized in an opposite state.
Claim 5
Dependent Claim 82 words
The integrated circuit memory of claim 3 wherein: the first one-half of the plurality of ferroelectric reference cells are coupled to a first bit line section; the second one-half of the plurality of ferroelectric reference cells are coupled to a second bit line section; and the first and second reference circuits include an equilibrate circuit connected to the first bit line section and the second bit line section for electrically coupling the first bit line section to the second bit line section.
Claim 6
Dependent Claim 106 words
A memory comprising: an array of ferroelectric memory cells; means for sensing data stored on the ferroelectric memory cells; first means for coupling the means for sensing data to the ferroelectric memory cells; second means for coupling the means for sensing data to the ferroelectric memory cells; first means for providing a first reference voltage, the first means for providing being coupled to the first means for coupling and having a plurality of ferroelectric reference cells; and second means for providing a second reference voltage, the second means for providing being coupled to the second means for coupling and having a plurality of ferroelectric reference cells.
Claim 7
Dependent Claim 106 words
A memory comprising: an array of ferroelectric memory cells; means for sensing data stored on the ferroelectric memory cells; first means for coupling the means for sensing data to the ferroelectric memory cells; second means for coupling the means for sensing data to the ferroelectric memory cells; first means for providing a first reference voltage, the first means for providing being coupled to the first means for coupling and having a plurality of ferroelectric reference cells; and second means for providing a second reference voltage, the second means for providing being coupled to the second means for coupling and having a plurality of ferroelectric reference cells.
Claim 8
Dependent Claim 59 words
The memory of claim 5 wherein: the plurality of ferroelectric reference cells of each of the first and second means for providing are an even number, and a first one-half of the plurality of ferroelectric reference cells are polarized in one state and a second one-half of the plurality of ferroelectric reference cells are polarized in an opposite state.
Claim 9
Dependent Claim 37 words
The memory of claim 5 further comprising: a third means for providing a reference voltage, the third means being coupled to the first means for coupling and having a non-remnant capacitor circuit for providing a reference voltage.
Claim 10
Dependent Claim 34 words
The memory of claim 7 wherein the non-remnant capacitor circuit is comprised of a conductor line having a line capacitance, and a plurality of capacitors selectively coupled to the conductor line via access devices.
Claim 11
Dependent Claim 305 words
An integrated circuit memory comprising: a differential sense amplifier to sense and amplify data stored on ferroelectric memory cells, the sense amplifier comprising two sensing nodes and having cross-coupled p-sense and n-sense amplifier stages; a first pair of bit line sections coupled to the two sensing nodes of the sense amplifier and first ferroelectric memory cells; a second pair of bit line sections coupled to the two sensing nodes of the sense amplifier and second ferroelectric memory cells; a first reference circuit coupled to the first pair of bit line sections comprising two ferroelectric reference cells, a first one of the ferroelectric reference cells is polarized in one state and a second one of the ferroelectric reference cells is polarized in an opposite state; a first n-channel equilibrate transistor connected to a first bit line and a second bit line of the first pair of bit line sections for electrically coupling the first bit line to the second bit line; a first n-channel isolation transistor for selectively coupling either the first bit line or the second bit line of the first pair of bit line sections to the differential sense amplifier; a second reference circuit coupled to the second pair of bit line sections comprising two ferroelectric reference cells, a first one of the ferroelectric reference cells is polarized in one state and a second one of the ferroelectric reference cells is polarized in an opposite state; a second n-channel equilibrate transistor connected to a first bit line and a second bit line of the second pair of bit line sections for electrically coupling the first bit line to the second bit line; and a second n-channel isolation transistor for selectively coupling either the first bit line or the second bit line of the second pair of bit line sections to the differential sense amplifier.
Claim 12
Dependent Claim 305 words
An integrated circuit memory comprising: a differential sense amplifier to sense and amplify data stored on ferroelectric memory cells, the sense amplifier comprising two sensing nodes and having cross-coupled p-sense and n-sense amplifier stages; a first pair of bit line sections coupled to the two sensing nodes of the sense amplifier and first ferroelectric memory cells; a second pair of bit line sections coupled to the two sensing nodes of the sense amplifier and second ferroelectric memory cells; a first reference circuit coupled to the first pair of bit line sections comprising two ferroelectric reference cells, a first one of the ferroelectric reference cells is polarized in one state and a second one of the ferroelectric reference cells is polarized in an opposite state; a first n-channel equilibrate transistor connected to a first bit line and a second bit line of the first pair of bit line sections for electrically coupling the first bit line to the second bit line; a first n-channel isolation transistor for selectively coupling either the first bit line or the second bit line of the first pair of bit line sections to the differential sense amplifier; a second reference circuit coupled to the second pair of bit line sections comprising two ferroelectric reference cells, a first one of the ferroelectric reference cells is polarized in one state and a second one of the ferroelectric reference cells is polarized in an opposite state; a second n-channel equilibrate transistor connected to a first bit line and a second bit line of the second pair of bit line sections for electrically coupling the first bit line to the second bit line; and a second n-channel isolation transistor for selectively coupling either the first bit line or the second bit line of the second pair of bit line sections to the differential sense amplifier.
Claim 13
Dependent Claim 196 words
A memory device comprising: a differential sense amplifier to sense and amplify data stored on ferroelectric memory cells, the sense amplifier comprising first and second sensing nodes; a first bit line coupled to ferroelectric memory cells and to the first sensing node of the differential sense amplifier via a first isolation transistor; a second bit line coupled to ferroelectric memory cells and to the second sensing node of the differential sense amplifier via a second isolation transistor; a third bit line coupled to ferroelectric memory cells and to the first sensing node of the differential sense amplifier via a third isolation transistor; a fourth bit line coupled to ferroelectric memory cells and to the second sensing node of the differential sense amplifier via a fourth isolation transistor; a first ferroelectric reference cell coupled to the first bit line; a second ferroelectric reference cell coupled to the second bit line; a third ferroelectric reference cell coupled to the third bit line; a fourth ferroelectric reference cell coupled to the fourth bit line; a first equilibrate transistor connected between the first and second bit lines; and a second equilibrate transistor connected between the third and fourth bit lines.
Claim 14
Dependent Claim 196 words
A memory device comprising: a differential sense amplifier to sense and amplify data stored on ferroelectric memory cells, the sense amplifier comprising first and second sensing nodes; a first bit line coupled to ferroelectric memory cells and to the first sensing node of the differential sense amplifier via a first isolation transistor; a second bit line coupled to ferroelectric memory cells and to the second sensing node of the differential sense amplifier via a second isolation transistor; a third bit line coupled to ferroelectric memory cells and to the first sensing node of the differential sense amplifier via a third isolation transistor; a fourth bit line coupled to ferroelectric memory cells and to the second sensing node of the differential sense amplifier via a fourth isolation transistor; a first ferroelectric reference cell coupled to the first bit line; a second ferroelectric reference cell coupled to the second bit line; a third ferroelectric reference cell coupled to the third bit line; a fourth ferroelectric reference cell coupled to the fourth bit line; a first equilibrate transistor connected between the first and second bit lines; and a second equilibrate transistor connected between the third and fourth bit lines.
Claim 15
Dependent Claim 123 words
A memory system comprising: a microprocessor coupled to a memory device; and the memory device comprising: an array of ferroelectric memory cells, a sense amplifier to sense and amplify data stored on the ferroelectric memory cells, a first pair of bit line sections coupled to the sense amplifier and ferroelectric memory cells, a second pair of bit line sections coupled to the sense amplifier and ferroelectric memory cells, a first reference circuit coupled to the first pair of bit line sections and having a plurality of ferroelectric reference cells for providing a first reference voltage, and a second reference circuit coupled to the second pair of bit line sections and having a plurality of ferroelectric reference cells for providing a second reference voltage.
Claim 16
Dependent Claim 123 words
A memory system comprising: a microprocessor coupled to a memory device; and the memory device comprising: an array of ferroelectric memory cells, a sense amplifier to sense and amplify data stored on the ferroelectric memory cells, a first pair of bit line sections coupled to the sense amplifier and ferroelectric memory cells, a second pair of bit line sections coupled to the sense amplifier and ferroelectric memory cells, a first reference circuit coupled to the first pair of bit line sections and having a plurality of ferroelectric reference cells for providing a first reference voltage, and a second reference circuit coupled to the second pair of bit line sections and having a plurality of ferroelectric reference cells for providing a second reference voltage.

References Cited (Backward Citations)

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USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 2001-05-11 2001-11-10 2002-05-12 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 2005-05-11 2005-11-10 2006-05-12 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2009-05-11 2009-11-10 2010-05-12 $7700.00 Window Closed / Lapsed

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