US5010518A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor memory device
Assignee: Toshiba Corp
•
Filing: 1989-10-16
•
Granted: 1991-04-23
•
Expires: 2009-10-16
Abstract
Abstract A semiconductor memory device comprises a first bit line, a second bit line paired with the first bit line, a third bit line branch-connected with the first bit line, a fourth bit line paired with the third bit line and branch-connected with the second bit line, a memory cell array connected to the bit lines, a first reference cell, and a second reference cell. The first reference cell is connected to the first bit line and the third bit line, constituted by a cell which is formed of substantially the same area, capacity and structure as the memory cell array, and providing a reference potential at the time of reading out data from memory cells in the memory cell array. And the second reference cell is connected to the second bit line and the fourth bit line, constituted by a cell which is formed of substantially the same area, capacity and structure as the memory cell array, and providing a reference potential at the time of reading out data from the memory cells in the memory cell array. The memory cell array is a non-volatile type constituted by ferroelectric cells.
Inventors
- 👤 Haruki Toda
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 05:01
CPC Classifications
G; G11; G11C; G11C11/00; G11C11/21; G11C11/22; G11C7/00; G11C7/14; H; H10; H10B; H10B53/00
Claims Analysis
Total Claims: 18
Claim 1
Independent Claim
180 words
A semiconductor memory device comprising: a first bit line; a second bit line, paired with the first bit line; a third bit line connected to the first bit line; a fourth bit line paired with the third bit line and connected to the second bit line; a memory cell array, connected to the bit lines, and containing memory cells; a first reference cell, connected to the first bit line and the third bit line, including a cell which is formed of substantially the same area, capacity and structure as the memory cells of the memory cell array, and providing a first reference potential at a time of reading out data from the memory cells in the memory cell array; and a second reference cell, connected to the second bit line and the fourth bit line, including a cell which is formed of substantially the same area, capacity and structure as the memory cells of the memory cell array, and providing a second reference potential at a time of reading out data from the memory cells in the memory cell array.
Claim 2
Dependent Claim
180 words
A semiconductor memory device comprising: a first bit line; a second bit line, paired with the first bit line; a third bit line connected to the first bit line; a fourth bit line paired with the third bit line and connected to the second bit line; a memory cell array, connected to the bit lines, and containing memory cells; a first reference cell, connected to the first bit line and the third bit line, including a cell which is formed of substantially the same area, capacity and structure as the memory cells of the memory cell array, and providing a first reference potential at a time of reading out data from the memory cells in the memory cell array; and a second reference cell, connected to the second bit line and the fourth bit line, including a cell which is formed of substantially the same area, capacity and structure as the memory cells of the memory cell array, and providing a second reference potential at a time of reading out data from the memory cells in the memory cell array.
Claim 3
Dependent Claim
20 words
The semiconductor memory device according to claim 1, wherein said first and second reference cells are of a non-volatile type.
Claim 4
Dependent Claim
21 words
The semiconductor memory device according to claim 1, wherein each of said first and second reference cells includes a ferroelectric cell.
Claim 5
Dependent Claim
22 words
The semiconductor memory device according to claim 3, wherein an electric field applied to said ferroelectric cell results in a hysteresis relationship.
Claim 6
Dependent Claim
19 words
The semiconductor memory device according to claim 1, wherein said first and second reference cells include switching transistor components.
Claim 7
Dependent Claim
20 words
The semiconductor memory device according to claim 5, wherein said first and second reference cells include only one transistor component.
Claim 8
Dependent Claim
18 words
The semiconductor memory device according to claim 5, wherein said memory cell array is of a non-volatile type.
Claim 9
Dependent Claim
16 words
The semiconductor memory device according to claim 5, wherein said memory cell array includes ferroelectric cells.
Claim 10
Dependent Claim
30 words
The semiconductor memory device according to claim 5, further comprising: a dummy word line level generating circuit for supplying dummy word line drive signals to gates of said switching transistors.
Claim 11
Dependent Claim
38 words
The semiconductor memory device according to claim 9, wherein said dummy word line drive signals cause said reference cells to apply a reference potential to the bit lines before data is read out from said memory cell array.
Claim 12
Dependent Claim
18 words
The semiconductor memory device according to claim 10, wherein said memory cell array is constructed with ferroelectric cells.
Claim 13
Dependent Claim
18 words
The semiconductor memory device according to claim 9, wherein said memory cell array is constructed with ferroelectric cells.
Claim 14
Dependent Claim
27 words
The semiconductor memory device according to claim 1, further comprising: reset switching transistors, connected to the bit lines, to clear data in the memory cell array, simultaneously.
Claim 15
Dependent Claim
20 words
The semiconductor memory device according to claim 13, wherein the reset switching transistors are connected to a predetermined potential terminal.
Claim 16
Dependent Claim
18 words
The semiconductor memory device according to claim 14, wherein said memory cell array is constructed with ferroelectric cells.
Claim 17
Dependent Claim
26 words
The semiconductor memory device according to claim 1, further comprising: sense amplifiers connected, to said memory cell array, to detect data in said memory cell array.
Claim 18
Dependent Claim
18 words
The semiconductor memory device according to claim 16, wherein said memory cell array is constructed with ferroelectric cells.
References Cited (Backward Citations)
US4873664A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-04-22 | 1994-10-22 | 1995-04-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-04-22 | 1998-10-22 | 1999-04-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-04-22 | 2002-10-22 | 2003-04-23 | $7700.00 | Window Closed / Lapsed |