US5733383A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Spacers used to form isolation trenches with improved corners
Assignee: Micron Technology Inc
•
Filing: 1994-12-13
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Granted: 1998-03-31
•
Expires: 2014-12-13
Abstract
Abstract A trench for isolating active devices on a semiconductor substrate, formed by creating a trench which has a peripheral edge, and disposing an isolating material in the trench. The isolating material extends over the peripheral edge of the trench, thereby covering at least a portion of the substrate surrounding the trench, and substantially limiting leakage of the active devices disposed on the substrate.
Inventors
- 👤 Pierre C. Fazan
- 👤 Martin C. Roberts
- 👤 Gurtej S. Sandhu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 05:15
CPC Classifications
H; H10; H10W; H10W10/00; H10W10/01; H10W10/011; H10W10/014; H10W10/0145; H10W10/10; H10W10/17; Y; Y10; Y10S; Y10S438/00; Y10S438/978
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
82 words
A means for isolating integrated circuits, said means comprising: a trench formed in a planar substrate, said trench having a depth of approximately 0.2 μm to 0.8 μm, said trench having a peripheral edge; and an isolating material disposed in said trench, said isolating material being exclusively CVD-oxide, said isolating material extending over said peripheral edge of said trench onto said planar substrate adjacent said trench and forming a dome, thereby covering at least a portion of said substrate surrounding said trench.
Claim 2
Dependent Claim
82 words
A means for isolating integrated circuits, said means comprising: a trench formed in a planar substrate, said trench having a depth of approximately 0.2 μm to 0.8 μm, said trench having a peripheral edge; and an isolating material disposed in said trench, said isolating material being exclusively CVD-oxide, said isolating material extending over said peripheral edge of said trench onto said planar substrate adjacent said trench and forming a dome, thereby covering at least a portion of said substrate surrounding said trench.
Claim 3
Dependent Claim
37 words
The means for isolating integrated circuits, according to claim 1, further comprising: a layer disposed superjacent said planar substrate, said layer being in contact with and coating said trench, said layer being disposed subjacent said isolating material.
Claim 4
Dependent Claim
26 words
The means for isolating integrated circuits, according to claim 1, further comprising: another layer disposed superjacent said planar substrate, said another layer covering said isolating material.
Claim 5
Dependent Claim
32 words
The means for isolating integrated circuits, according to claim 1, wherein said trench has sidewalls, said sidewalls being sloped at an angle of approximately 90° to 70° relative to the planar substrate.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2001-03-30 | 2001-09-29 | 2002-03-31 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-03-30 | 2005-09-29 | 2006-03-31 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-03-30 | 2009-09-29 | 2010-03-31 | $7700.00 | Window Closed / Lapsed |