Patent US5568258A successfully refreshed from Google Patents.
Patent US5728591A successfully refreshed from Google Patents.
US5728591A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Process for manufacturing light valve device using semiconductive composite substrate
Assignee: Seiko Instruments Inc
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Filing: 1995-06-02
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Granted: 1998-03-17
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Expires: 2015-06-02
Abstract
Abstract A process for manufacturing a light valve device comprises forming a transparent insulating thin film layer on a surface of a semiconductor substrate, and forming a single crystal semiconductor thin film on a surface of the transparent insulating thin film layer. A portion of the single crystal semiconductor thin film is then removed and at least one pixel electrode is formed on the transparent insulating thin film layer at a region where the single crystal semiconductor thin film has been removed. A driving unit is then formed in the single crystal semiconductor thin film. Thereafter, a carrier substrate is laminated using an adhesive on the surface of the semiconductor substrate at a region corresponding to the pixel electrode and the driving unit. The semiconductor substrate is then removed to expose a surface of the transparent insulating thin film layer and through-holes and a metal film are formed on the exposed surface thereof. Thereafter, the metal film is removed to form a light shielding layer for covering at least a portion of a region of the transparent insulating thin film layer occupied by the driving unit and to form an electrode pad for connection to the driving unit through the through-holes. A substrate is then arranged opposite to the transparent insulating thin film to define a gap therebetween, and an electrooptical material is disposed in the gap.
Inventors
- 👤 Kunihiro Takahashi
- 👤 Yoshikazu Kojima
- 👤 Hiroaki Takasu
- 👤 Nobuyoshi Matsuyama
- 👤 Hitoshi Niwa
- 👤 Tomoyuki Yoshino
- 👤 Tsuneo Yamazaki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-10 01:50
CPC Classifications
H; H10; H10D; H10D86/00; H10D86/01; H10D86/021; H10D86/0214; H10D30/00; H10D30/60; G; G02; G02F; G02F1/00; G02F1/01; G02F1/13; G02F1/133; G02F1/1333; G02F1/1345; G02F1/13454; H10D30/01; H10D30/021; H10D30/031; H10D30/0321; H10D30/0323; H10D30/67; H10D30/6729; H10D30/673; H10D30/6733; H10D30/6734; H10D86/40; H10D86/60; H10P; H10P90/00; H10P90/19; H10P90/1904; H10P90/1906; H10W; H10W10/00; H10W10/01; H10W10/061; H10W10/10; H10W10/181; G02F1/1335; G02F1/133509; G02F1/133512; G02F1/136; G02F1/13613; G02F2202/00; G02F2202/10; G02F2202/105; H10P72/00; H10P72/70; H10P72/74; H10P72/7432; H10W10/021; H10W10/20; Y; Y10; Y10S; Y10S148/00; Y10S148/012; Y10S148/135
Claims Analysis
Total Claims: 22
Claim 1
Independent Claim
251 words
A process for manufacturing a light valve device, comprising: forming a transparent insulating thin film layer on a surface of a semiconductor substrate; bonding a single crystal semiconductor substrate on the transparent insulating thin film layer; polishing the single crystal semiconductor substrate to form a single crystal semiconductor thin film; removing a portion of the single crystal semiconductor thin film; forming pixel electrodes on the transparent insulating thin film layer in a region where the single crystal semiconductor thin film has been removed; forming a driving unit, including pixel switching elements and driving circuits for energizing the pixel switching elements, in the single crystal semiconductor thin film; laminating a carrier substrate using an adhesive on the surface of the semiconductor substrate at a region corresponding to the pixel electrodes and the driving unit; removing the semiconductor substrate to expose a surface of the transparent insulating thin film layer; forming through-holes on the exposed surface of the transparent insulating thin film layer; forming a metal film on the exposed surface of the transparent insulating thin film layer; removing the metal film to form a light shielding layer for covering at least a portion of a region of the transparent insulating thin film layer occupied by the driving unit and to form an electrode pad for connection to the driving unit through the through-holes; arranging a substrate formed with a transparent electrode opposite to the transparent insulating thin film layer to define a gap therebetween; and disposing an electrooptical material in the gap.
Claim 2
Dependent Claim
251 words
A process for manufacturing a light valve device, comprising: forming a transparent insulating thin film layer on a surface of a semiconductor substrate; bonding a single crystal semiconductor substrate on the transparent insulating thin film layer; polishing the single crystal semiconductor substrate to form a single crystal semiconductor thin film; removing a portion of the single crystal semiconductor thin film; forming pixel electrodes on the transparent insulating thin film layer in a region where the single crystal semiconductor thin film has been removed; forming a driving unit, including pixel switching elements and driving circuits for energizing the pixel switching elements, in the single crystal semiconductor thin film; laminating a carrier substrate using an adhesive on the surface of the semiconductor substrate at a region corresponding to the pixel electrodes and the driving unit; removing the semiconductor substrate to expose a surface of the transparent insulating thin film layer; forming through-holes on the exposed surface of the transparent insulating thin film layer; forming a metal film on the exposed surface of the transparent insulating thin film layer; removing the metal film to form a light shielding layer for covering at least a portion of a region of the transparent insulating thin film layer occupied by the driving unit and to form an electrode pad for connection to the driving unit through the through-holes; arranging a substrate formed with a transparent electrode opposite to the transparent insulating thin film layer to define a gap therebetween; and disposing an electrooptical material in the gap.
Claim 3
Dependent Claim
24 words
A process for manufacturing a light valve device according to claim 1; wherein the semiconductor substrate is comprised of a single crystal silicon substrate.
Claim 4
Dependent Claim
36 words
A process for manufacturing a light valve device according to claim 1; wherein the light shielding layer is formed to cover the whole region of the single crystal semiconductor thin film occupied by the driving unit.
Claim 5
Dependent Claim
23 words
A process for manufacturing a light valve device according to claim 1; wherein the single crystal semiconductor thin film is comprised of silicon.
Claim 6
Dependent Claim
24 words
A process for manufacturing a light valve device according to claim 1; wherein the transparent insulating thin film layer is comprised of silicon dioxide.
Claim 7
Dependent Claim
25 words
A process for manufacturing a light valve device according to claim 1; wherein the carrier substrate is laminated using an adhesive comprised of silicon dioxide.
Claim 8
Dependent Claim
40 words
A process for manufacturing a light valve device according to claim 1; further comprising forming an orientation layer over a region of the carrier substrate corresponding to the pixel electrodes and the pixel switching elements after removing the metal film.
Claim 9
Dependent Claim
221 words
A process for manufacturing a light valve device, comprising: depositing a layer of silicon dioxide on a surface of a first substrate; bonding a second substrate of single crystal silicon on the silicon dioxide layer; subjecting the second substrate to processing to form a single crystal semiconductor thin film; removing a portion of the single crystal semiconductor thin film; forming at least one pixel electrode on a region of the silicon dioxide layer where the single crystal semiconductor thin film has been removed; forming a driving unit in the single crystal semiconductor thin film; laminating a third substrate using an adhesive on the surface of the first substrate corresponding to the pixel electrode and the driving unit; removing the first semiconductor substrate to expose a surface of the silicon dioxide layer; forming through-holes on the exposed surface of the silicon dioxide layer; forming a metal film on the exposed surface of the silicon dioxide layer; removing the metal film to form a light shielding layer for covering at least a portion of a region of the silicon dioxide layer occupied by the driving unit and to form an electrode pad for connection to the driving unit through the through-holes; arranging a substrate opposite to the silicon dioxide layer to define a gap therebetween; and disposing an electrooptical material in the gap.
Claim 10
Dependent Claim
221 words
A process for manufacturing a light valve device, comprising: depositing a layer of silicon dioxide on a surface of a first substrate; bonding a second substrate of single crystal silicon on the silicon dioxide layer; subjecting the second substrate to processing to form a single crystal semiconductor thin film; removing a portion of the single crystal semiconductor thin film; forming at least one pixel electrode on a region of the silicon dioxide layer where the single crystal semiconductor thin film has been removed; forming a driving unit in the single crystal semiconductor thin film; laminating a third substrate using an adhesive on the surface of the first substrate corresponding to the pixel electrode and the driving unit; removing the first semiconductor substrate to expose a surface of the silicon dioxide layer; forming through-holes on the exposed surface of the silicon dioxide layer; forming a metal film on the exposed surface of the silicon dioxide layer; removing the metal film to form a light shielding layer for covering at least a portion of a region of the silicon dioxide layer occupied by the driving unit and to form an electrode pad for connection to the driving unit through the through-holes; arranging a substrate opposite to the silicon dioxide layer to define a gap therebetween; and disposing an electrooptical material in the gap.
Claim 11
Dependent Claim
51 words
A process for manufacturing a light valve device according to claim 8; wherein the step of forming the driving unit comprises forming a pixel switching element and a driving circuit for energizing the pixel switching element, and electrically connecting the driving circuit and the pixel electrode through the pixel switching element.
Claim 12
Dependent Claim
24 words
A process for manufacturing a light valve device according to claim 8; wherein the first substrate is comprised of a single crystal silicon substrate.
Claim 13
Dependent Claim
36 words
A process for manufacturing a light valve device according to claim 8; wherein the light shielding layer is formed to cover the whole region of the single crystal semiconductor thin film occupied by the driving unit.
Claim 14
Dependent Claim
23 words
A process for manufacturing a light valve device according to claim 8; wherein the single crystal semiconductor thin film is comprised of silicon.
Claim 15
Dependent Claim
25 words
A process for manufacturing a light valve device according to claim 8; wherein the third substrate is laminated using an adhesive comprised of silicon dioxide.
Claim 16
Dependent Claim
34 words
A process for manufacturing a light valve device according to claim 8; further comprising forming an orientation layer over a region of the third substrate corresponding to the pixel electrode and the driving unit.
Claim 17
Dependent Claim
51 words
A process for manufacturing a light valve device according to claim 14; wherein the step of forming the driving unit comprises forming a pixel switching element and a driving circuit for energizing the pixel switching element, and electrically connecting the driving circuit and the pixel electrode through the pixel switching element.
Claim 18
Dependent Claim
30 words
A process for manufacturing a light valve device according to claim 8; wherein the second substrate is subjected to a polishing treatment to form the single crystal semiconductor thin film.
Claim 19
Dependent Claim
226 words
A process for manufacturing a light valve device, comprising: forming a transparent insulating thin film layer on a surface of a semiconductor substrate; forming a single crystal semiconductor thin film having a uniform crystal orientation on the transparent insulating thin film layer; removing a portion of the single crystal semiconductor thin film; forming a pixel electrode on a region of the transparent insulating thin film layer where the single crystal semiconductor thin film has been removed; forming a driving unit in the single crystal semiconductor thin film; laminating a carrier substrate using an adhesive on the surface of the semiconductor substrate at a region corresponding to the pixel electrode and the driving unit; removing the semiconductor substrate to expose a surface of the transparent insulating thin film layer; forming through-holes on the exposed surface of the transparent insulating thin film layer; forming a metal film on the exposed surface of the transparent insulating thin film layer; removing the metal film to form a light shielding layer for covering at least a portion of a region of the transparent insulating thin film layer occupied by the driving unit and to form an electrode pad for connection to the driving unit through the through-holes; arranging a substrate opposite to the transparent insulating thin film layer to define a gap therebetween; and disposing an electrooptical material in the gap.
Claim 20
Dependent Claim
226 words
A process for manufacturing a light valve device, comprising: forming a transparent insulating thin film layer on a surface of a semiconductor substrate; forming a single crystal semiconductor thin film having a uniform crystal orientation on the transparent insulating thin film layer; removing a portion of the single crystal semiconductor thin film; forming a pixel electrode on a region of the transparent insulating thin film layer where the single crystal semiconductor thin film has been removed; forming a driving unit in the single crystal semiconductor thin film; laminating a carrier substrate using an adhesive on the surface of the semiconductor substrate at a region corresponding to the pixel electrode and the driving unit; removing the semiconductor substrate to expose a surface of the transparent insulating thin film layer; forming through-holes on the exposed surface of the transparent insulating thin film layer; forming a metal film on the exposed surface of the transparent insulating thin film layer; removing the metal film to form a light shielding layer for covering at least a portion of a region of the transparent insulating thin film layer occupied by the driving unit and to form an electrode pad for connection to the driving unit through the through-holes; arranging a substrate opposite to the transparent insulating thin film layer to define a gap therebetween; and disposing an electrooptical material in the gap.
Claim 21
Dependent Claim
51 words
A process for manufacturing a light valve device according to claim 17; wherein the step of forming a driving unit comprises forming a pixel switching element and a driving circuit for energizing the pixel switching element, and electrically connecting the driving circuit and the pixel electrode through the pixel switching element.
Claim 22
Dependent Claim
24 words
A process for manufacturing a light valve device according to claim 17; wherein the semiconductor substrate is comprised of a single crystal silicon substrate.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2001-03-16 | 2001-09-15 | 2002-03-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-03-16 | 2005-09-15 | 2006-03-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-03-16 | 2009-09-15 | 2010-03-17 | $7700.00 | Window Closed / Lapsed |