US4980308A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of making a thin film transistor
Assignee: Sony Corp
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Filing: 1989-11-13
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Granted: 1990-12-25
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Expires: 2009-11-13
Abstract
Abstract The present invention relates to a semiconductor device in which a semiconductor element is formed on a semiconductor layer (3) supported on a substrate (1) via at least insulating layers (2) and (4) as shown in FIGS. 1 and 2 and a method of fabricating the same. The semiconductor layer (3) has wiring layers (5) and (6) on both surfaces thereof, thus leading itself well for increasing the density of wiring and for increasing the operation speed in a large-scale integrated circuit device.
Inventors
- 👤 Hisao Hayashi
- 👤 Takeshi Matsushita
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 08:41
CPC Classifications
H; H10; H10D; H10D84/00; H10D84/01; H10D84/0123; H10D84/0126; H10D84/0165; H10D84/0186; H10W; H10W20/00; H10W20/01; H10D84/017; H10W20/40; H10W20/41; H10W20/435; Y; Y10; Y10S; Y10S438/00; Y10S438/928; Y10S438/977
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
158 words
In a method of fabricating a semiconductor device consisting of a thin film semiconductor formed on an insulating substrate, comprising the steps of forming on a first major surface of a semiconductor substrate, a first insulating film, forming a first wiring layer which does not adjoin said semiconductor substrate on said insulating film, forming said insulating substrate on said first wiring layer, removing said semiconductor substrate from its second major surface side to form said thin film semiconductor layer, forming a second insulating film on said thin film semiconductor layer, forming a second thin semiconductor layer on said second insulting film, forming a gate film on said second thin semiconductor layer, forming a second gate on said gate film, using said second gate as a mask for ion implantation to form p and n source and drain regions, forming an insulating layer over said source and drain regions, and forming electrodes connected to said source and drain regions.
Claim 2
Dependent Claim
158 words
In a method of fabricating a semiconductor device consisting of a thin film semiconductor formed on an insulating substrate, comprising the steps of forming on a first major surface of a semiconductor substrate, a first insulating film, forming a first wiring layer which does not adjoin said semiconductor substrate on said insulating film, forming said insulating substrate on said first wiring layer, removing said semiconductor substrate from its second major surface side to form said thin film semiconductor layer, forming a second insulating film on said thin film semiconductor layer, forming a second thin semiconductor layer on said second insulting film, forming a gate film on said second thin semiconductor layer, forming a second gate on said gate film, using said second gate as a mask for ion implantation to form p and n source and drain regions, forming an insulating layer over said source and drain regions, and forming electrodes connected to said source and drain regions.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-12-24 | 1994-06-25 | 1994-12-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-12-24 | 1998-06-25 | 1998-12-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-12-24 | 2002-06-25 | 2002-12-25 | $7700.00 | Window Closed / Lapsed |