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US5714402A
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US
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Method for fabricating a capacitor of a semiconductor device and the structure of the same
Assignee: Mosaid Technologies Inc
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Filing: 1996-11-27
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Granted: 1998-02-03
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Expires: 2016-11-27
Abstract
Abstract A capacitor structure suitable for the high integration of a semiconductor device is fabricated with a method comprising the steps of: providing a semiconductor substrate; forming a ruthenium-platinum film on the semiconductor substrate; thermally treating the ruthenium-platinum film to grow a ruthenium-platinum oxide on the ruthenium-platinum film; and forming a dielectric film and a conductive layer on the ruthenium-platinum oxide, in sequence.
Inventors
- 👤 Kyeong Keun Choi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 05:27
CPC Classifications
H; H10; H10D; H10D84/00; H10D1/00; H10D1/60; H10D1/68; H10D1/692; H10D1/682; H10D1/696
Claims Analysis
Total Claims: 18
Claim 1
Independent Claim
57 words
A method for fabricating a capacitor of a semiconductor device, comprising the steps of: providing a semiconductor substrate: forming a simultaneously deposited ruthenium-platinum film on the semiconductor substrate; thermally treating the ruthenium-platinum film to grow a ruthenium-platinum oxide on the ruthenium-platinum film; and forming a dielectric film and a conductive layer on the ruthenium-platinum oxide, in sequence.
Claim 2
Independent Claim
57 words
A method for fabricating a capacitor of a semiconductor device, comprising the steps of: providing a semiconductor substrate: forming a simultaneously deposited ruthenium-platinum film on the semiconductor substrate; thermally treating the ruthenium-platinum film to grow a ruthenium-platinum oxide on the ruthenium-platinum film; and forming a dielectric film and a conductive layer on the ruthenium-platinum oxide, in sequence.
Claim 3
Dependent Claim
29 words
A method in accordance with claim 1, further comprising the step of forming a titanium film and a titanium nitride film between the semiconductor substrate and the ruthenium-platinum film.
Claim 4
Dependent Claim
28 words
A method in accordance with claim 1, wherein said ruthenium-platinum film is formed in a sputtering process in which ruthenium and platinum are simultaneously taken as a target.
Claim 5
Dependent Claim
45 words
A method in accordance with claim 3, wherein said ruthenium-platinum film is formed at room temperature to 700° C. and at a power of 50-5,000 watts under a deposition pressure of about 1 mTorr to 100 Torr for 1-10 min in a DC sputtering process.
Claim 6
Dependent Claim
45 words
A method in accordance with claim 3, wherein said ruthenium-platinum film is formed at room temperature to 700° C. and at a power of 50-5,000 watts under a deposition pressure of about 1 mTorr to 100 Torr for 1-10 min in an RF sputtering process.
Claim 7
Dependent Claim
23 words
A method in accordance with claim 1, wherein said thermal treatment step is carried out at about 500°-850° C. for about 0.5-2 hrs.
Claim 8
Independent Claim
136 words
A method for fabricating a capacitor of a semiconductor device, comprising the steps of: providing a semiconductor substrate; forming a lower insulating layer over said semiconductor substrate, said lower insulating layer having a contact hole through which predetermined area of said semiconductor substrate is exposed; forming a contact plug in said contact hole of said lower insulating layer; forming a titanium film and a titanium nitride film over said contact plug and said lower insulating layer, in sequence; forming a simultaneously deposited ruthenium-platinum film on said titanium nitride film; thermally treating said platinum-ruthenium film to grow a ruthenium-platinum oxide on said ruthenium-platinum film; patterning said ruthenium-platinum oxide, said ruthenium-platinum film, said titanium nitride and titanium film; and forming a dielectric film and a plate electrode over the resulting structure, formed in said pattering step, in sequence.
Claim 9
Independent Claim
136 words
A method for fabricating a capacitor of a semiconductor device, comprising the steps of: providing a semiconductor substrate; forming a lower insulating layer over said semiconductor substrate, said lower insulating layer having a contact hole through which predetermined area of said semiconductor substrate is exposed; forming a contact plug in said contact hole of said lower insulating layer; forming a titanium film and a titanium nitride film over said contact plug and said lower insulating layer, in sequence; forming a simultaneously deposited ruthenium-platinum film on said titanium nitride film; thermally treating said platinum-ruthenium film to grow a ruthenium-platinum oxide on said ruthenium-platinum film; patterning said ruthenium-platinum oxide, said ruthenium-platinum film, said titanium nitride and titanium film; and forming a dielectric film and a plate electrode over the resulting structure, formed in said pattering step, in sequence.
Claim 10
Dependent Claim
21 words
A method in accordance with claim 7, wherein said lower insulating film is formed of an insulating material superior in flowability.
Claim 11
Dependent Claim
15 words
A method in accordance with claim 7, wherein said contact plug is formed of polysilicon.
Claim 12
Dependent Claim
20 words
A method in accordance with claim 7, wherein said titanium film is formed at a thickness of about 100-300 Angstrom.
Claim 13
Dependent Claim
21 words
A method in accordance with claim 7, wherein said titanium nitride film is formed at a thickness of about 200-400 Angstrom.
Claim 14
Dependent Claim
28 words
A method in accordance with claim 7, wherein said ruthenium-platinum film is formed in a sputtering process in which ruthenium and platinum are simultaneously taken as a target.
Claim 15
Dependent Claim
45 words
A method in accordance with claim 12, wherein said ruthenium-platinum film is formed at room temperature to 700° C. and at a power of 50-5,000 watts under a deposition pressure of about 1 mTorr to 100 Torr for 1-10 min in a DC sputtering process.
Claim 16
Dependent Claim
45 words
A method in accordance with claim 12, wherein said ruthenium-platinum film is formed at room temperature to 700° C. and at a power of 50-5,000 watts under a deposition pressure of about 1 mTorr to 100 Torr for 1-10 min in an RF sputtering process.
Claim 17
Dependent Claim
23 words
A method in accordance with claim 7, wherein said thermal treatment step is carried out at about 500°-850° C. for about 0.5-2 hrs.
Claim 18
Dependent Claim
19 words
A method in accordance with claim 7., wherein said dielectric film is formed at a thickness of 300-600 Angstrom.
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2001-02-02 | 2001-08-04 | 2002-02-03 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-02-02 | 2005-08-04 | 2006-02-03 | $3760.00 | Window Closed / Lapsed |
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