Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
195 words
A method of making a semiconductor device assembly, comprising the steps of: providing a semiconductor substrate having a surface; forming a layer of heat-reflective material on the surface of the semiconductor substrate, the heat-reflective material being electrically insulated from heat producing active devices in the semiconductor substrate; providing an interconnect substrate having a surface; forming thermally conductive pillars on the surface of at least one of the substrates, wherein the thermally conductive pillars conduct heat from the semiconductor die to the interconnect substrate; forming solder bumps on the surface of at least one of the substrates: positioning the semiconductor substrate so that the surface of the semiconductor substrate faces the surface of the interconnect substrate; forming interconnections between the surfaces of the substrates with the solder bumps such that the distance between the substrates is determined by the height of the conductive pillars; providing a guard area on a portion of the surface of the interconnect substrate; and providing at least one of the thermally conductive pillars such that when the substrates are assembled to one another, the at least one of the thermally conductive pillars extends between the semiconductor substrate and the guard area.
Claim 2
Independent Claim
195 words
A method of making a semiconductor device assembly, comprising the steps of: providing a semiconductor substrate having a surface; forming a layer of heat-reflective material on the surface of the semiconductor substrate, the heat-reflective material being electrically insulated from heat producing active devices in the semiconductor substrate; providing an interconnect substrate having a surface; forming thermally conductive pillars on the surface of at least one of the substrates, wherein the thermally conductive pillars conduct heat from the semiconductor die to the interconnect substrate; forming solder bumps on the surface of at least one of the substrates: positioning the semiconductor substrate so that the surface of the semiconductor substrate faces the surface of the interconnect substrate; forming interconnections between the surfaces of the substrates with the solder bumps such that the distance between the substrates is determined by the height of the conductive pillars; providing a guard area on a portion of the surface of the interconnect substrate; and providing at least one of the thermally conductive pillars such that when the substrates are assembled to one another, the at least one of the thermally conductive pillars extends between the semiconductor substrate and the guard area.
Claim 3
Dependent Claim
16 words
Method, according to claim 1, wherein: the interconnect substrate has superconducting traces on the surface thereof.
Claim 4
Dependent Claim
41 words
Method, according to claim 1 further comprising the step of: forming at least one thermally insulated pillar on the surface of at least one of the substrates, wherein the at least one thermally insulated pillar determines the distance between the substrates.
Claim 5
Dependent Claim
16 words
Method, according to claim 3, wherein: the thermally insulated pillar is made of thermally insulating material.
Claim 6
Dependent Claim
47 words
Method, according to claim 3, wherein: the thermally insulated pillar is made by: forming a layer of thermally insulating material on a portion of the surface of one of the substrates; and forming a pillar made of thermally conductive material on the layer of thermally insulating material.
Claim 7
Dependent Claim
15 words
Method, according to claim 5, wherein the layer of thermally insulating material is silicon dioxide.
Claim 8
Dependent Claim
15 words
Method, according to claim 5, wherein me layer of thermally insulating material is silicon nitride.
Claim 9
Dependent Claim
27 words
Method, according to claim 1, further comprising: providing at least one thermally-insulating pillar extending between the semiconductor substrate and the interconnect substrate outside of the guard area.
Claim 10
Dependent Claim
22 words
Method, according to claim 1, further comprising: providing superconducting traces on the surface of the interconnect substrate outside of the guard area.
Claim 11
Dependent Claim
21 words
Method, according to claim 1, further comprising: providing superconducting traces on the surface of the interconnect substrate within the guard area.