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US5700715A Expired / Lapsed US ⏱️ 0.0 years remaining

Process for mounting a semiconductor device to a circuit substrate

Assignee: Bell Semiconductor LLC
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Filing: 1995-05-03
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Granted: 1997-12-23
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Expires: 2015-05-03
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Abstract

Abstract A process for mounting one or more dies a substrate, such as by ball-bumps. In one embodiment, a thin layer of heat-reflective material, such as gold, is disposed over the surface of the die facing the substrate, to shield the substrate from heat generated by the die. Other embodiments are directed to "pillar" spacers formed on the surface of the die and/or the substrate to control the spacing therebetween. The pillars can be thermally-conductive or thermally non-conductive. Thermally-conductive pillars can be thermally isolated from the die or substrate by an insulating layer. Thermally-conductive pillars can be employed to extract heat from selected areas of a die, into selected lines or areas of the substrate, and the heat on the substrate can then be dissipated by a coolant. Lines on the substrate which are advertently heated by the die can be employed to limit the current of selected circuits on the semiconductor die.

Inventors

  • 👤 Nicholas F. Pasch

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-03 12:19
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/41; H10W20/44; H10W20/4484; H10W72/00; H10W72/071; H10W72/072; H10W72/07221; H10W72/07227; H10W72/07231; H10W72/07236; H10W72/20; H10W72/281; H10W72/285

Claims Analysis

Total Claims: 11
Claim 1
Independent Claim 195 words
A method of making a semiconductor device assembly, comprising the steps of: providing a semiconductor substrate having a surface; forming a layer of heat-reflective material on the surface of the semiconductor substrate, the heat-reflective material being electrically insulated from heat producing active devices in the semiconductor substrate; providing an interconnect substrate having a surface; forming thermally conductive pillars on the surface of at least one of the substrates, wherein the thermally conductive pillars conduct heat from the semiconductor die to the interconnect substrate; forming solder bumps on the surface of at least one of the substrates: positioning the semiconductor substrate so that the surface of the semiconductor substrate faces the surface of the interconnect substrate; forming interconnections between the surfaces of the substrates with the solder bumps such that the distance between the substrates is determined by the height of the conductive pillars; providing a guard area on a portion of the surface of the interconnect substrate; and providing at least one of the thermally conductive pillars such that when the substrates are assembled to one another, the at least one of the thermally conductive pillars extends between the semiconductor substrate and the guard area.
Claim 2
Independent Claim 195 words
A method of making a semiconductor device assembly, comprising the steps of: providing a semiconductor substrate having a surface; forming a layer of heat-reflective material on the surface of the semiconductor substrate, the heat-reflective material being electrically insulated from heat producing active devices in the semiconductor substrate; providing an interconnect substrate having a surface; forming thermally conductive pillars on the surface of at least one of the substrates, wherein the thermally conductive pillars conduct heat from the semiconductor die to the interconnect substrate; forming solder bumps on the surface of at least one of the substrates: positioning the semiconductor substrate so that the surface of the semiconductor substrate faces the surface of the interconnect substrate; forming interconnections between the surfaces of the substrates with the solder bumps such that the distance between the substrates is determined by the height of the conductive pillars; providing a guard area on a portion of the surface of the interconnect substrate; and providing at least one of the thermally conductive pillars such that when the substrates are assembled to one another, the at least one of the thermally conductive pillars extends between the semiconductor substrate and the guard area.
Claim 3
Dependent Claim 16 words
Method, according to claim 1, wherein: the interconnect substrate has superconducting traces on the surface thereof.
Claim 4
Dependent Claim 41 words
Method, according to claim 1 further comprising the step of: forming at least one thermally insulated pillar on the surface of at least one of the substrates, wherein the at least one thermally insulated pillar determines the distance between the substrates.
Claim 5
Dependent Claim 16 words
Method, according to claim 3, wherein: the thermally insulated pillar is made of thermally insulating material.
Claim 6
Dependent Claim 47 words
Method, according to claim 3, wherein: the thermally insulated pillar is made by: forming a layer of thermally insulating material on a portion of the surface of one of the substrates; and forming a pillar made of thermally conductive material on the layer of thermally insulating material.
Claim 7
Dependent Claim 15 words
Method, according to claim 5, wherein the layer of thermally insulating material is silicon dioxide.
Claim 8
Dependent Claim 15 words
Method, according to claim 5, wherein me layer of thermally insulating material is silicon nitride.
Claim 9
Dependent Claim 27 words
Method, according to claim 1, further comprising: providing at least one thermally-insulating pillar extending between the semiconductor substrate and the interconnect substrate outside of the guard area.
Claim 10
Dependent Claim 22 words
Method, according to claim 1, further comprising: providing superconducting traces on the surface of the interconnect substrate outside of the guard area.
Claim 11
Dependent Claim 21 words
Method, according to claim 1, further comprising: providing superconducting traces on the surface of the interconnect substrate within the guard area.

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 2000-12-22 2001-06-23 2001-12-23 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 2004-12-22 2005-06-23 2005-12-23 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2008-12-22 2009-06-23 2009-12-23 $7700.00 Window Closed / Lapsed

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