EP0202109A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
A semiconductor device having high resistance to electrostatic and electromagnetic induction
Assignee: Toshiba Corp
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Filing: 1986-05-13
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Granted: —
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Expires: 2006-05-13
Abstract
Abstract @ A semiconductor device is disclosed with a conductive on-chip shield film (8) formed on its surface. The on-chip shield film (8) is patterned in a manner substantially complementary to the pattern of the wiring layer (5) of the semiconductor device so that the shield film (8) does not cover portions of the semiconductor device which are covered by the wiring-pattern layer (5). In this manner, the on-chip shield film (8) of the semiconductor device provides high resistance to electrostatic and electromagnetic induction while maintaining the ability of the device to withstand changes in ambient temperature.
Inventors
- 👤 Keiji Patent Division Toshiba Corp. Kamasaki
- 👤 Tadao Patent Division Toshiba Corp. Dengo
- 👤 Ikuo Patent Division Toshiba Corp. Fukada
- 👤 Hideaki Patent Division Toshiba Corp. Motojima
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-03 16:09
CPC Classifications
H; H10; H10W; H10W72/00; H10W72/90; H10F; H10F55/00; H10F77/00; H10F77/30; H10F77/306; H10F77/331; H10F77/334; H10W42/00; H10W42/20; H10W42/60; H10W70/00; H10W70/60; H10W72/50; H10W72/531; H10W72/536; H10W72/59; H10W72/931; H10W72/934; H10W72/951; H10W72/952; H10W72/981; H10W72/983
Claims Analysis
Total Claims: 21
Claim 1
Independent Claim
114 words
A semiconductor device having high resistance to electrostatic and electromagnetic induction comprising a semiconductor element (2, 3) formed in a semiconductor substrate; a first insulating film (4) formed on a surface of said semiconductor substrate (1); a wiring-pattern layer (5) formed on said first insulating film (4); a second insulating film (6) formed over said first insulating film (4) to cover said wiring-pattern layer (5); and a conductive shield film (8) formed over said second insulating film (6) characterised in that said conductive shield film (8) is substantially complementary to said wiring-pattern layer (5) to substantially cover those portions of said semiconductor substrate (1) which are not covered by said wiring pattern layer (5).
Claim 2
Dependent Claim
114 words
A semiconductor device having high resistance to electrostatic and electromagnetic induction comprising a semiconductor element (2, 3) formed in a semiconductor substrate; a first insulating film (4) formed on a surface of said semiconductor substrate (1); a wiring-pattern layer (5) formed on said first insulating film (4); a second insulating film (6) formed over said first insulating film (4) to cover said wiring-pattern layer (5); and a conductive shield film (8) formed over said second insulating film (6) characterised in that said conductive shield film (8) is substantially complementary to said wiring-pattern layer (5) to substantially cover those portions of said semiconductor substrate (1) which are not covered by said wiring pattern layer (5).
Claim 3
Dependent Claim
19 words
A semiconductor device according to claim 1, characterised in that said conductive shield film (8) is connected to ground.
Claim 4
Dependent Claim
31 words
A semiconductor device according to claim 1 or 2, characterised in that said semiconductor element comprises a light-receiving integrated circuit including a ligh sensitive region (2) and an amplifier element (3).
Claim 5
Dependent Claim
17 words
A semiconductor device according to claim 3, characterised in that said conductive shield film (8) is transparent.
Claim 6
Dependent Claim
25 words
A semiconductor device according to claim 3, characterised in that said conductive shield film (8) does not overlap any portion of said wiring-pattern layer (5).
Claim 7
Dependent Claim
22 words
A semiconductor device according to claim 3, characterised in that said conductive shield.film (8) overlaps selected portions of said wiring-pattern layers (5).
Claim 8
Dependent Claim
25 words
A semiconductor device according to claim 6, characterised in that said selected portions are above those portions of said wiring-pattern layer (5) at ground potential.
Claim 9
Dependent Claim
33 words
A semiconductor device according to claim 6, characterised in that said selected portions are those portions of said wiring-pattern layer (5) formed around said light sensitive region (2) of said light-receiving integrated circuit.
Claim 10
Dependent Claim
80 words
A semiconductor device according to any of claims 1 to 4, characterised in that said conductive shield film (8) is formed over said second insulating film (6) substantially complementary to said wiring pattern layer (5) except those portions of said wiring-pattern layer (5) at ground potential and those portions of said semiconductor element and said wiring-pattern layer (5) which are extremely sensitive to electrostatic and electromagnetic induction, said conductive shield (8) substantially covering all other portions of said semiconductor device.
Claim 11
Independent Claim
66 words
A method for insulating a semiconductor device from electrostatic and electromagnetic induction, said semiconductor device including a wiring-pattern layer formed thereover, said method comprising the step of: (a) covering the semiconductor device with a conductive shield film (8), said conductive shield film (8) being constructed in a manner to prevent undesirable electrical contact between said conductive shield film and the wiring-pattern layer of the semiconductor device.
Claim 12
Independent Claim
66 words
A method for insulating a semiconductor device from electrostatic and electromagnetic induction, said semiconductor device including a wiring-pattern layer formed thereover, said method comprising the step of: (a) covering the semiconductor device with a conductive shield film (8), said conductive shield film (8) being constructed in a manner to prevent undesirable electrical contact between said conductive shield film and the wiring-pattern layer of the semiconductor device.
Claim 13
Dependent Claim
21 words
A method according to claim 10, characterised by the, step of: (b) coupling said conductive shield film (8) to ground potential.
Claim 14
Dependent Claim
75 words
A method according to claim 10, characterised in that said covering step comprises the substeps of: (c) patterning said conductive shield film (8) to substantially complement a non-grounded portion of said wiring-pattern layer (5) such that said conductive shield film (8) does not substantially cover those portions of the semiconductor device which are covered by the non-grounded portion of the wiring-pattern layer (5); and (d) disposing said conductive shield film (8) over the semiconductor device.
Claim 15
Dependent Claim
16 words
A method according to claim 12, characterised in that steps (c) and (d) are performed simultaneously.
Claim 16
Dependent Claim
54 words
A method according to claim 12, characterised by the step of: (e) further patterning said conductive shield film (8) to substantially complement all portions of said wiring-pattern layer (5), such that said conductive shield film (8) does not substantially cover those portions of said semiconductor device which are covered by said wiring-pattern layer (5).
Claim 17
Dependent Claim
16 words
A method according to claim 14, characterised in that steps (c) and (e) are performed simultaneously.
Claim 18
Dependent Claim
17 words
A method according to claim 14, characterised in that steps (c), (d), and (e) are performed simultaneously.
Claim 19
Dependent Claim
64 words
A method according to claim 10, characterised in that said covering step comprises the substeps of: (f) patterning said conductive shield film (8) to substantially complement a non-grounded portion of said wiring-pattern layer (5) except for selected portions of said wiring pattern layer (5) which are sensitive to electrostatic and electromagnetic induction; and (g) disposing said conductive shield film (8) over the semiconductor device.
Claim 20
Dependent Claim
16 words
A method according to claim 17, characterised in that steps (f) and (g) are performed simultaneously.
Claim 21
Dependent Claim
48 words
A method according to claim 17, characterised in that the semiconductor device comprises a ligh receiving integrated circuit including a light sensitive region (2) and an amplifier (3) and wherein the selected portions of said wiring pattern layer (5) are those portions surrounding the light sensitive region (2).
References Cited (Backward Citations)
No citation records indexed.
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