Semiconductor ic device containing a conductive plate

Claim 1

A lead-on chip type semiconductor IC device comprising: a semiconductor pellet having a major surface on a first region of which is formed a plurality of active elements; a plurality of electrodes formed on a second region of said major surface of said semiconductor pellet, said second region excluding said first region on which said active elements are formed; a first insulating film formed on the entire said first region of said major surface on which said active elements are formed; a conductive plate disposed on said first insulating film; a second insulating film selectively arranged on predetermined regions of said conductive plate; a lead frame including both a plurality of connecting terminals on said second insulating film, and also a plurality of leads laterally and independently extending form said connecting terminals, respectively; said conductive plate being the only conductive plate located between said semiconductor pellet and each of said connecting terminals; and a plurality of conductive wires connecting said electrodes to said connecting terminals, respectively; whereby vertical electric fields generated in said connecting terminals are blocked by said conductive plate from entering said active elements.