US5696011A
Expired / Lapsed
US
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Method for forming an insulated gate field effect transistor
Assignee: Semiconductor Energy Laboratory Co Ltd
•
Filing: 1993-03-23
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Granted: 1997-12-09
•
Expires: 2013-03-23
Abstract
Abstract In an inverted stagger type thin-film transistor, the preparing process thereof can be simplified, and the unevenness of the thin film transistor prepared thereby can be reduced. That is, disclosed is a preparing method which comprises selectively doping a semiconductor on a gate insulating film with an impurity to form source, drain, and channel forming regions, and conducting a laser annealing to them, or a preparing method which comprises selectively doping the semiconductor region with an impurity by a laser doping method.
Inventors
- 👤 Shunpei Yamazaki
- 👤 Yasuhiko Takemura
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 21:10
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/031; H10D30/0321; H10D30/0312; H10D30/0316; H10D30/60; H10D30/67; H10D30/6729; H10D30/673; H10D30/6732; H10D30/674; H10D30/6741; H10D30/6743; H10D30/6746; H10D30/6757
Claims Analysis
Total Claims: 36
Claim 1
Independent Claim
133 words
A method of manufacturing a thin film transistor comprising the steps of: forming a gate electrode on an insulated surface of a transparent substrate; forming a gate insulating film over said gate electrode; forming an amorphous semiconductor layer comprising silicon over said gate electrode with said gate insulating film interposed therebetween; and irradiating portions of the semiconductor layer with a laser light from a rear side of the substrate with a gate electrode as a mask while a surface of the semiconductor layer is exposed to an impurity containing material, thereby simultaneously crystallizing and doping said portions with the impurity, wherein a region of the semiconductor layer between said portions is masked by said gate electrode from said laser light so that said region remains amorphous after the irradiation of said laser light.
Claim 2
Independent Claim
133 words
A method of manufacturing a thin film transistor comprising the steps of: forming a gate electrode on an insulated surface of a transparent substrate; forming a gate insulating film over said gate electrode; forming an amorphous semiconductor layer comprising silicon over said gate electrode with said gate insulating film interposed therebetween; and irradiating portions of the semiconductor layer with a laser light from a rear side of the substrate with a gate electrode as a mask while a surface of the semiconductor layer is exposed to an impurity containing material, thereby simultaneously crystallizing and doping said portions with the impurity, wherein a region of the semiconductor layer between said portions is masked by said gate electrode from said laser light so that said region remains amorphous after the irradiation of said laser light.
Claim 3
Dependent Claim
20 words
The method of claim 1 wherein said impurity containing material is in a gas phase when irradiating the laser light.
Claim 4
Dependent Claim
10 words
The method of claim 1 wherein said impurity is phosphorous.
Claim 5
Dependent Claim
10 words
The method of claim 1 wherein said impurity is boron.
Claim 6
Dependent Claim
14 words
The method of claim 1 wherein said laser light is an excimer laser light.
Claim 7
Dependent Claim
15 words
The method of claim 1 wherein said laser light is a XeCl excimer laser light.
Claim 8
Dependent Claim
16 words
The method of claim 1 wherein said gate electrode is directly formed on said transparent substrate.
Claim 9
Dependent Claim
13 words
The method of claim 1 wherein said semiconductor layer as deposited is amorphous.
Claim 10
Dependent Claim
15 words
The method of claim 1 wherein said semiconductor layer is formed by a plasma CVD.
Claim 11
Independent Claim
135 words
A method of manufacturing an N-type thin film transistor comprising the steps of: forming a gate electrode on an insulated surface of a transparent substrate; forming a gate insulating film over said gate electrode; forming an amorphous semiconductor layer comprising silicon over said gate electrode with said gate insulating film interposed therebetween; and irradiating portions of the semiconductor layer with a laser light from a rear side of the substrate with the gate electrode as a mask while a surface of the semiconductor layer is exposed to a donor impurity containing material, thereby simultaneously crystallizing and doping said portions with the impurity, wherein a region of the semiconductor layer between said portions is masked by said gate electrode from said laser light so that said region remains amorphous after the irradiation of said laser light.
Claim 12
Independent Claim
135 words
A method of manufacturing an N-type thin film transistor comprising the steps of: forming a gate electrode on an insulated surface of a transparent substrate; forming a gate insulating film over said gate electrode; forming an amorphous semiconductor layer comprising silicon over said gate electrode with said gate insulating film interposed therebetween; and irradiating portions of the semiconductor layer with a laser light from a rear side of the substrate with the gate electrode as a mask while a surface of the semiconductor layer is exposed to a donor impurity containing material, thereby simultaneously crystallizing and doping said portions with the impurity, wherein a region of the semiconductor layer between said portions is masked by said gate electrode from said laser light so that said region remains amorphous after the irradiation of said laser light.
Claim 13
Dependent Claim
20 words
The method of claim 10 wherein said impurity containing material is in a gas phase when irradiating the laser light.
Claim 14
Dependent Claim
10 words
The method of claim 10 wherein said impurity is phosphorous.
Claim 15
Dependent Claim
14 words
The method of claim 10 wherein said laser light is an excimer laser light.
Claim 16
Dependent Claim
15 words
The method of claim 10 wherein said laser light is a XeCl excimer laser light.
Claim 17
Dependent Claim
16 words
The method of claim 10 wherein said gate electrode is directly formed on said transparent substrate.
Claim 18
Dependent Claim
15 words
The method of claim 10 wherein said semiconductor layer is formed by a plasma CVD.
Claim 19
Dependent Claim
13 words
The method of claim 10 wherein said gate insulating film comprises silicon nitride.
Claim 20
Independent Claim
136 words
A method of manufacturing a thin film transistor comprising the steps of: forming a gate electrode on an insulated surface of a transparent substrate; forming a gate insulating film comprising silicon nitride over said gate electrode; forming an amorphous semiconductor layer comprising silicon over said gate electrode with said gate insulating film interposed therebetween; and irradiating portions of the semiconductor layer with a laser light from a rear side of the substrate with the gate electrode as a mask while a surface of the semiconductor layer is exposed to an impurity containing material, thereby simultaneously crystallizing and doping said portions with the impurity, wherein a region of the semiconductor layer between said portions is masked by said gate electrode from said laser light so that said region remains amorphous after the irradiation of said laser light.
Claim 21
Independent Claim
136 words
A method of manufacturing a thin film transistor comprising the steps of: forming a gate electrode on an insulated surface of a transparent substrate; forming a gate insulating film comprising silicon nitride over said gate electrode; forming an amorphous semiconductor layer comprising silicon over said gate electrode with said gate insulating film interposed therebetween; and irradiating portions of the semiconductor layer with a laser light from a rear side of the substrate with the gate electrode as a mask while a surface of the semiconductor layer is exposed to an impurity containing material, thereby simultaneously crystallizing and doping said portions with the impurity, wherein a region of the semiconductor layer between said portions is masked by said gate electrode from said laser light so that said region remains amorphous after the irradiation of said laser light.
Claim 22
Dependent Claim
20 words
The method of claim 18 wherein said impurity containing material is in a gas phase when irradiating the laser light.
Claim 23
Dependent Claim
10 words
The method of claim 18 wherein said impurity is phosphorous.
Claim 24
Dependent Claim
10 words
The method of claim 18 wherein said impurity is boron.
Claim 25
Dependent Claim
14 words
The method of claim 18 wherein said laser light is an excimer laser light.
Claim 26
Dependent Claim
15 words
The method of claim 18 wherein said laser light is a XeCl excimer laser light.
Claim 27
Independent Claim
144 words
A method of manufacturing a thin film transistor comprising the steps of: forming a gate electrode on an insulated surface of a transparent substrate; forming a gate insulating film over said gate electrode; forming an amorphous semiconductor layer comprising silicon over said gate electrode with said gate insulating film interposed therebetween, said semiconductor layer having a thickness not larger than 100 nm; and irradiating portions of the semiconductor layer with a laser light from a rear side of the substrate with the gate electrode as a mask while a surface of the semiconductor layer is exposed to an impurity containing material, thereby simultaneously crystallizing and doping said portions with the impurity, wherein a region of the semiconductor layer between said portions is masked by said gate electrode from said laser light so that said region remains amorphous after the irradiation of said laser light.
Claim 28
Independent Claim
144 words
A method of manufacturing a thin film transistor comprising the steps of: forming a gate electrode on an insulated surface of a transparent substrate; forming a gate insulating film over said gate electrode; forming an amorphous semiconductor layer comprising silicon over said gate electrode with said gate insulating film interposed therebetween, said semiconductor layer having a thickness not larger than 100 nm; and irradiating portions of the semiconductor layer with a laser light from a rear side of the substrate with the gate electrode as a mask while a surface of the semiconductor layer is exposed to an impurity containing material, thereby simultaneously crystallizing and doping said portions with the impurity, wherein a region of the semiconductor layer between said portions is masked by said gate electrode from said laser light so that said region remains amorphous after the irradiation of said laser light.
Claim 29
Dependent Claim
20 words
The method of claim 24 wherein said impurity containing material is in a gas phase when irradiating the laser light.
Claim 30
Dependent Claim
10 words
The method of claim 24 wherein said impurity is phosphorous.
Claim 31
Dependent Claim
10 words
The method of claim 24 wherein said impurity is boron.
Claim 32
Dependent Claim
14 words
The method of claim 24 wherein said laser light is an excimer laser light.
Claim 33
Dependent Claim
15 words
The method of claim 24 wherein said laser light is a XeCl excimer laser light.
Claim 34
Dependent Claim
16 words
The method of claim 24 wherein said gate electrode is directly formed on said transparent substrate.
Claim 35
Dependent Claim
13 words
The method of claim 24 wherein said semiconductor layer as deposited is amorphous.
Claim 36
Dependent Claim
15 words
The method of claim 24 wherein said semiconductor layer is formed by a plasma CVD.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2000-12-08 | 2001-06-09 | 2001-12-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-12-08 | 2005-06-09 | 2005-12-09 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-12-08 | 2009-06-09 | 2009-12-09 | $7700.00 | Window Closed / Lapsed |