EP0416798A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Manufacturing method for semiconductor device
Assignee: Canon Inc
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Filing: 1990-08-29
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Granted: —
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Expires: 2010-08-29
Abstract
Abstract A manufacturing method for a semiconductor device is preferably used for a semiconductor device using SOI (Silicon on Insulation) technology. At minimum, the method includes the following steps: the step of forming a gate electrode (5) on a substrate (1) by using a light-intercepting material; of forming a gate insulating film (4) on the substrate (1) including the gate electrode (5); of forming a semiconductor layer (3) on the gate insulating film (4); and of forming a source region (2a) and a drain region (2b) by virtue of the fact that the light (hD), having a wavelength such that the light is absorbed into the semiconductor layer (3) while not being absorbed into the substrate (1), is irradiated from the back of the substrate (1), before supplying impurities into the semiconductor layer (3).
Inventors
- 👤 Hitoshi C/O Canon Kabushiki Kaisha Shindo
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-01 22:50
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/031; H10D30/0321; H10D30/0312; H10D30/0316; H10D30/60; H10D30/67; H10D30/674; H10D30/6757; H10P; H10P32/00; H10P32/10; H10P32/14; H10P32/1408; H10P32/17; H10P32/171; H10P32/174; H10P34/00; H10P34/40; H10P34/42
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
100 words
A manufacturing method for a semiconductor device, comprising at least the steps of: forming a gate electrode of light-intercepting material on a substrate; forming a gate insulating film upon the substrate and said gate electrode; forming a semiconductor layer upon said gate insulating film; and forming a source region and a drain region by virtue of the fact that light, having a wavelength such that the light is absorbed mainly in said semiconductor layer rather than being absorbed in said substrate, is irradiated from the back of said substrate, before and/or whilst supplying active dopant impurities to said semiconductor layer.
Claim 2
Dependent Claim
100 words
A manufacturing method for a semiconductor device, comprising at least the steps of: forming a gate electrode of light-intercepting material on a substrate; forming a gate insulating film upon the substrate and said gate electrode; forming a semiconductor layer upon said gate insulating film; and forming a source region and a drain region by virtue of the fact that light, having a wavelength such that the light is absorbed mainly in said semiconductor layer rather than being absorbed in said substrate, is irradiated from the back of said substrate, before and/or whilst supplying active dopant impurities to said semiconductor layer.
Claim 3
Dependent Claim
42 words
A manufacturing method for a semiconductor device according to claim 1, wherein in order to supply the impurities to said semiconductor layer, at least a gas containing the impurities, as an impurity source, is introduced at the time of the light irradiation.
Claim 4
Dependent Claim
44 words
A manufacturing method for a semiconductor device according to claim 1, wherein in order to supply the impurities to said semiconductor layer, an amount of the impurities or a substance containing the impurities, as an impurity source, is previously deposited on said semiconductor layer.
Claim 5
Dependent Claim
18 words
A manufacturing method for a semiconductor device according to any preceding claim, wherein said semiconductor layer comprises silicon.
Claim 6
Dependent Claim
18 words
A manufacturing method for a semiconductor device according to claim 4, wherein said silicon is in polycrystalline form.
Claim 7
Dependent Claim
25 words
A manufacturing method for a semiconductor device according to any one of the preceding claims 1 to 3, wherein said semiconductor layer comprises gallium arsenide.
Claim 8
Dependent Claim
19 words
A manufacturing method for a semiconductor device according to any preceding claim, wherein said light irradiation is performed intermittently.
Claim 9
Dependent Claim
21 words
A manufacturing method for a semiconductor device according to any preceding claim, wherein said wavelength is not longer than blue wavelength.
Claim 10
Dependent Claim
23 words
A manufacturing method for a semiconductor device according to claim 1, wherein said impurities are supplied from the surface of said semiconductor layer.
Claim 11
Dependent Claim
17 words
A manufacturing method for a semiconductor device according to any preceding claim, wherein said substrate is transparent.
Claim 12
Dependent Claim
20 words
A manufacturing method for a semiconductor device according to claim 10, wherein said transparent sustrate is of a glass material.
Claim 13
Dependent Claim
18 words
A manufacturing method for a semiconductor device according to claim 11, wherein said glass material is quartz glass.
Claim 14
Dependent Claim
36 words
A manufacturing method for a semiconductor device according to any preceding claim, wherein said gate electrode is of either aluminium (A1) or tungsten (W), or an alloy or a metallic compound comprising either aluminium or tungsten.
References Cited (Backward Citations)
No citation records indexed.
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