Thin-film transistor

Abstract

Abstract PURPOSE:To remove the nonuniformity of the film thickness of a gate insulating film by anodizing the surface of a gate electrode, forming an aluminum oxide layer on the surface and flattening the surface of Al when Al is used as the gate electrode and the gate insulating film is prepared. CONSTITUTION:Al is evaporated onto a glass substrate 11, a gate electrode pattern 12 is shaped through selective etching, and an aluminum oxide film 13 is formed onto a gate electrode 12 by employing an anodization method. A gate insulating layer 14 is deposited, a semiconductor layer 15 is deposited and Al is deposited, and a source electrode 16 and a drain electrode 17 are shaped through selective etching. Since the surface of Al as the gate electrode 12 is coated with the aluminum oxide layer 13 in an insulated gate thin-film transistor prepared in this manner, there is no irregularity on the surface of the electrode, thus preventing the short circuit of the gate electrode 12 and the source electrode 16.

Inventors

• 👤 Yutaka Minamino
• 👤 裕 南野
• 👤 Yoshiya Takeda
• 👤 悦矢 武田
• 👤 Noriko Ookawa
• 👤 大川　野里子

Bibliographic Details