EP0456199A2
Expired / Lapsed
EP
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Process for preparing a polycrystalline semiconductor thin film transistor
Assignee: AGC Inc
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Filing: 1991-05-07
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Granted: —
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Expires: 2011-05-07
Abstract
Abstract A process for preparing a polycrystalline semiconductor thin film transistor wherein a non-singlecrystalline semiconductor (3) formed on a transparent insulating substrate (1) is annealed by laser beams, such process comprising forming a gate insulation layer (4) and a gate electrode (5) on the non-singlecrystalline semiconductor; implanting impurity ions into a source-drain region (9,10) of the semiconductor wherein the gate electrode is used as a mask, and irradiating laser beams from the rear surface side of the transparent insulating substrate to thereby polycrystallize the non-singlecrystalline semiconductor under the gate electrode or improve the crystallinity of the semiconductor without causing the non-singlecrystalline semiconductor in a completely molten state.
Inventors
- 👤 Kunio Masumo
- 👤 Masanori Yuki
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-02 11:12
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/24; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/031; H10D30/0312; H10D30/0314; H10D30/0321; H10P14/29; H10P14/2901; H10P14/2922; H10P14/32; H10P14/3202; H10P14/3238; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/3451; H10P14/3452; H10P14/3454; H10P14/38; H10P14/3802; H10P14/3808; H10P14/3814; H10P14/382; H10P34/00; H10P34/40; H10P34/42; Y; Y10; Y10S; Y10S148/00; Y10S148/091
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
103 words
A process for preparing a polycrystalline semiconductor thin film transistor wherein a non-singlecrystalline semiconductor formed on a transparent insulating substrate is annealed by laser beams, said process being characterized by forming a gate insulation layer and a gate electrode on said non-singlecrystalline semiconductor; implanting impurity ions into a source-drain region of said semiconductor wherein the gate electrode is used as a mask, and irradiating laser beams from the rear surface side of the transparent insulating substrate to thereby polycrystallize the non-singlecrystalline semiconductor under the gate electrode or improve the crystallinity of said semiconductor without causing said non-singlecrystalline semiconductor in a completely molten state.
Claim 2
Dependent Claim
31 words
The process for preparing a polycrystalline semiconductor thin film transistor according to Claim 1, wherein the scanning speed of the laser beams is a beam spot diameter × 5,000/sec or higher.
Claim 3
Dependent Claim
23 words
An active matrix substrate prepared by using the process for preparing a polycrystalline semiconductor thin film transistor described in Claim 1 or 2.
Claim 4
Dependent Claim
14 words
A liquid crystal display device with the active matrix substrate described in Claim 3.
Claim 5
Dependent Claim
121 words
A process for preparing a polycrystalline semiconductor thin film transistor wherein a non-singlecrystalline semiconductor formed on a transparent insulating substrate is annealed by laser beams, said process being characterized by forming a gate insulation layer and a gate electrode on said non-singlecrystalline semiconductor; implanting impurity ions into a source-drain region of said semiconductor wherein the gate electrode is used as a mask, and irradiating laser beams from the rear surface side of the transparent insulating substrate to thereby polycrystallize the non-singlecrystalline semiconductor under the gate electrode or improve the crystallinity of said semiconductor and polycrystallize and activate said semiconductor at the source-drain region, or improve the crystallinity and activate the same simultaneously, without causing non-singlecrystalline semiconductor in a completely molten state.
Claim 6
Dependent Claim
139 words
A process for preparing a polycrystalline semiconductor thin film transistor wherein a non-singlecrystalline semiconductor formed on an insulating substrate is annealed by laser beams, said process being characterized by forming a gate insulation layer on said non-singlecrystalline semiconductor; forming as a semiconductor for a gate electrode a non-singlecrystalline semiconductor on the gate insulation layer; implanting impurity ions into the semiconductor for the gate electrode and a source-drain region of said semiconductor on the insulating substrate; and irradiating laser beams to thereby polycrystallize the non-singlecrystalline semiconductor on the insulating substrate at the channel region or improve the crystallinity of said semiconductor, polycrystallize and activate the semiconductor of the gate electrode and said semiconductor on the insulating substrate at the source-drain region, or improve the crystallinity and activate the same simultaneously, without causing said non-singlecrystalline semiconductor in a completely molten state.
Claim 7
Dependent Claim
31 words
The process for preparing a polycrystalline semiconductor thin film transistor according to Claim 9, wherein the scanning speed of the laser beams is a beam spot diameter × 5,000/sec or higher.
Claim 8
Dependent Claim
23 words
An active matrix substrate prepared by using the process for preparing a polycrystalline semiconductor thin film transistor described in Claim 6 or 7.
Claim 9
Dependent Claim
16 words
A liquid crystal display device prepared by using the active matrix substrate described in Claim 8.
References Cited (Backward Citations)
No citation records indexed.
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