Patent US5693557A successfully refreshed from Google Patents.
US5693557A
Expired / Lapsed
US
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Method of fabricating a semiconductor device
Assignee: Panasonic Holdings Corp
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Filing: 1996-01-24
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Granted: 1997-12-02
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Expires: 2016-01-24
Abstract
Abstract A method of the invention for fabricating a semiconductor device includes the steps of: forming an oxide film having a non-uniform thickness on silicon; reducing at least a portion of the oxide film using gas containing a metal element, and growing a metal film containing the metal element on the silicon by reacting an exposed surface of the silicon with the gas; and removing the metal film.
Inventors
- 👤 Shuji Hirao
- 👤 Hisashi Ogawa
- 👤 Yuka Terai
- 👤 Mitsuru Sekiguchi
- 👤 Masanori Fukumoto
- 👤 Isao Miyanaga
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:52
CPC Classifications
H; H10; H10D; H10D1/00; H10D1/60; H10D1/68; H10D1/692; H10D1/711; H10D1/712; H10P; H10P50/00; H10P50/20; H10P50/26; H10P50/262; H10W; H10W20/00; H10W20/01; H10W20/031; Y; Y10; Y10S; Y10S148/00; Y10S148/014; Y10S438/00; Y10S438/964
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
94 words
A method of fabricating a semiconductor device, the method of comprising the steps of: depositing, on conductive silicon, a metal film containing a material at a concentration at least equal to a maximum concentration allowed by a solid solubility at a certain temperature; precipitating said material on said silicon with positional nonuniformity of thickness by annealing at said certain temperature after completion of the step of depositing said metal film; and removing said metal film without removing any of the precipitated material while keeping the precipitated material on said silicon of said semiconductor device.
Claim 2
Independent Claim
94 words
A method of fabricating a semiconductor device, the method of comprising the steps of: depositing, on conductive silicon, a metal film containing a material at a concentration at least equal to a maximum concentration allowed by a solid solubility at a certain temperature; precipitating said material on said silicon with positional nonuniformity of thickness by annealing at said certain temperature after completion of the step of depositing said metal film; and removing said metal film without removing any of the precipitated material while keeping the precipitated material on said silicon of said semiconductor device.
Claim 3
Dependent Claim
55 words
A method according to claim 1, said method further comprising the steps of: forming a capacitive insulating film on said silicon after said step of removing said metal film; and depositing a conductive film on said capacitive insulating film to form a capacitor which includes said silicon, said capacitive insulating film and said conductive film.
Claim 4
Dependent Claim
26 words
A method according to claim 1, wherein said step of depositing a metal film is a step of depositing an aluminum alloy film on said silicon.
Claim 5
Dependent Claim
15 words
A method according to claim 1, wherein said material is a IV group compound semiconductor.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2000-12-01 | 2001-06-02 | 2001-12-02 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-12-01 | 2005-06-02 | 2005-12-02 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-12-01 | 2009-06-02 | 2009-12-02 | $7700.00 | Window Closed / Lapsed |