US4927783A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for fabricating semiconductor device
Assignee: Mitsubishi Electric Corp
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Filing: 1988-04-11
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Granted: 1990-05-22
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Expires: 2008-04-11
Abstract
Abstract A semiconductor device in accordance with the present invention comprises: a silicon substrate (1); an insulator layer (2) formed on the silicon substrate; a contact hole (8e) opened through the insulator layer; and a filler of doped silicon (5) grown on the silicon substrate (1) in the contact hole (8e) by solid phase precipitation from an alloy film (6) containing silicon and a doping element.
Inventors
- 👤 Hajime Arai
- 👤 Hiroshi Harada
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 17:48
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/01; H10D64/011; H10D64/0111; H10D64/0113; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/056; H10W20/057; H10W20/062; H10W20/40; H10W20/41; H10W20/44; H10W20/4451
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
114 words
A method for fabricating a semiconductor device, comprising the steps of: forming an insulator layer on a silicon substrate; opening a contact hole through said insulator layer; forming an alloy film containing silicon, said alloy film being in contact with said silicon substrate at the bottom of said contact hole; growing a filler of doped silicon at least on said silicon substrate in said contact hole by solid phase precipitation from said alloy film by heat treatment; etching said alloy film away to leave at least said filler on said substrate in said contact hole; and forming a conductor layer on said insulator layer, said conductor layer being in electric contact with said filler.
Claim 2
Independent Claim
114 words
A method for fabricating a semiconductor device, comprising the steps of: forming an insulator layer on a silicon substrate; opening a contact hole through said insulator layer; forming an alloy film containing silicon, said alloy film being in contact with said silicon substrate at the bottom of said contact hole; growing a filler of doped silicon at least on said silicon substrate in said contact hole by solid phase precipitation from said alloy film by heat treatment; etching said alloy film away to leave at least said filler on said substrate in said contact hole; and forming a conductor layer on said insulator layer, said conductor layer being in electric contact with said filler.
Claim 3
Dependent Claim
21 words
The method for fabricating a semiconductor device in accordance with claim 1, wherein said alloy film is of an Al-Si alloy.
Claim 4
Dependent Claim
23 words
The method for fabricating a semiconductor device in accordance with claim 1, wherein said doping element is selected from boron, phosphorus and arsenic.
Claim 5
Dependent Claim
18 words
The method for fabricating a semiconductor device in accordance with claim 3, wherein the doping element is boron.
Claim 6
Dependent Claim
39 words
The method for fabricating a semiconductor device in accordance with claim 2, wherein the Si is present in said alloy in an amount higher by about 1-2% than an ordinary Al-Si alloy to permit the ready precipitation of Si.
Claim 7
Independent Claim
127 words
A method for fabricating a semiconductor device, comprising the steps of: preparing a silicon substrate; forming an insulator layer on said silicon substrate; opening a contact hole through said insulator layer; forming an alloy film containing silicon and a doping element, said alloy film being in contact with said silicon substrate at the bottom of said contact hole, and growing a filler of doped silicon on said silicon substrate in said contact hole by solid phase precipitation from said alloy film by heat treatment; further comprising etching said alloy film away to expose said doped silicon filler on said silicon substrate; and providing a resist layer covering the surface of said doped silicon filler to cover at least said contact hole and portions of said insulator layer.
Claim 8
Independent Claim
127 words
A method for fabricating a semiconductor device, comprising the steps of: preparing a silicon substrate; forming an insulator layer on said silicon substrate; opening a contact hole through said insulator layer; forming an alloy film containing silicon and a doping element, said alloy film being in contact with said silicon substrate at the bottom of said contact hole, and growing a filler of doped silicon on said silicon substrate in said contact hole by solid phase precipitation from said alloy film by heat treatment; further comprising etching said alloy film away to expose said doped silicon filler on said silicon substrate; and providing a resist layer covering the surface of said doped silicon filler to cover at least said contact hole and portions of said insulator layer.
Claim 9
Dependent Claim
30 words
The method for fabricating a semiconductor device in accordance with claim 6, further comprising etching away said doped silicon filler formed on said insulator layer; and removing said resist layer.
Claim 10
Dependent Claim
29 words
The method for fabricating a semiconductor device of claim 7, further comprising providing a metal film on said insulator layer and said doped silicon filler in said contact hole.
Claim 11
Dependent Claim
21 words
The method for fabricating a semiconductor device of claim 8, further comprising substantially planarizing the outer surface of said metal film.
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