Method of making thin film transistor

Claim 2

A process for producing semiconductor device which comprises at least a thin film transistor comprising a gate electrode, an insulating layer, a semiconductor layer, an ohmic contact layer, and source and drain electrodes stacked on an insulating substrate, and at least a portion capable of accumulating charge comprising a first electrode, the insulating layer, the semiconductor layer, the ohmic contact layer and a second electrode stacked on the insulating substrate, which comprises the steps of: forming the gate electrode and the first electrode on the insulating substrate; stacking the insulating layer, the semiconductor layer and the ohmic contact layer in this order on the insulating substrate having the gate electrode and the first electrode thereon; providing a layer of an electroconductive material for forming the source and the drain electrodes and the second electrode on the ohmic contact layer and patterning the layer to form the source and the drain electrodes and the second electrode; and patterning the semiconductor layer and the insulating layer after formation of the source and the drain electrodes and the second electrode.

Claim 3

A process for producing a semiconductor device which comprises a thin film transistor comprising an insulating substrate, a controlling electrode formed on the insulating substrate, an insulating layer formed on the controlling electrode, a semiconductor layer formed on the insulating layer and source and drain electrodes electrically connected to the semiconductor layer; and a capacitor comprising a first electrode formed on the insulating substrate and a second electrode formed on the first electrode via an insulating layer and opposed to the first electrode, the source or the drain electrode of the thin film transistor being electrically connected to the second electrode, which comprises the steps of: forming the controlling electrode and the first electrode on the insulating substrate; laminating the insulating layer and the semiconductor layer in this order on the controlling electrode and the first electrode; forming the source and the drain electrodes and the second electrode on the semiconductor layer; and patterning the insulating layer and the semiconductor layer after formation of the source and the drain electrodes and the second electrode.

Claim 4

A process for producing a semiconductor device which comprises a thin film transistor comprising an insulating substrate, a controlling electrode formed on the insulating substrate, an insulating layer formed on the controlling electrode, a semiconductor layer formed on the insulating layer and source and drain electrodes electrically connected to the semiconductor layer; and a capacitor comprising a first electrode formed on the insulating substrate and a second electrode formed on the first electrode via an insulating layer and opposed to the first electrode, the source or the drain electrode of the thin film transistor being electrically connected to the second electrode, which comprises the steps of: forming the controlling electrode and the first electrode on the insulating substrate; laminating the insulating layer and the semiconductor layer in this order on the controlling electrode and the first electrode; forming the source and the drain electrodes and the second electrode on the semiconductor layer; and patterning the insulating layer and the semiconductor layer after formation of the source and the drain electrodes and the second electrode.

Claim 5

A process for producing a semiconductor device comprising a thin film transistor and a capacitor, comprising the steps of: forming a controlling electrode of the thin film transistor and a first electrode of the capacitor on an insulating substrate; forming a first insulating layer, a semiconductor layer and a second insulating layer in this order on the controlling electrode and the first electrode; providing an opening portion in the second insulating layer and forming source and drain electrodes of the transistor and a second electrode of the capacitor on the semiconductor layer via the opening portion; and patterning the first insulating layer, the semiconductor layer and said second insulating layer after formation of the the source and drain electrodes and the second electrode.

Claim 6

A process for producing a semiconductor device comprising a thin film transistor and a capacitor, comprising the steps of: forming a controlling electrode of the thin film transistor and a first electrode of the capacitor on an insulating substrate; forming a first insulating layer, a semiconductor layer and a second insulating layer in this order on the controlling electrode and the first electrode; providing an opening portion in the second insulating layer and forming source and drain electrodes of the transistor and a second electrode of the capacitor on the semiconductor layer via the opening portion; and patterning the first insulating layer, the semiconductor layer and said second insulating layer after formation of the the source and drain electrodes and the second electrode.

Claim 7

The process according to claim 2, wherein the source and the drain electrodes are provided on the semiconductor layer via an ohmic contact layer.

Claim 8

The process according to claim 4, further comprising a step of forming the ohmic contact layer on the semiconductor layer.

Claim 9

The process according to claim 3, wherein the source and the drain electrodes are provided on the semiconductor layer via an ohmic contact layer.

Claim 10

The process according to claim 6, further comprising a step of forming the ohmic contact layer on the semiconductor layer.

Claim 11

The process according to claim 1, wherein the portion capable of accumulating charge comprises a capacitor.

Claim 12

The process according to claim 1, wherein the at least a thin film transistor and the at least a portion capable of accumulating charge comprise plural thin film transistors and plural portions capable of accumulating charge.

Claim 13

The process according to claim 1, wherein the thin film transistor and the at least a portion capable of accumulating charge are in a matrix.

Claim 14

The process according to claim 1, wherein the semiconductor layer comprises polysilicon or amorphous silicon.

Claim 15

The process according to claim 1, wherein the ohmic contact layer comprises a doped semiconductor.

Claim 16

The process according to claim 2, wherein the semiconductor layer comprises polysilicon or amorphous silicon.

Claim 17

The process according to claim 4, wherein the ohmic contact layer comprises a doped semiconductor.

Claim 18

The process according to claim 3, wherein the semiconductor layer comprises polysilicon or amorphous silicon.

Claim 19

The process according to claim 6, wherein the ohmic contact layer comprises a doped semiconductor.