Semiconductor device and manufacture thereof

Abstract

Abstract PURPOSE:To lower and ensure contact resistance between a scanning wire and a leading-out wiring without heat treatment by introducing a metallic silicide as a gate electrode material and aluminum as the scanning wire for reducing resistance. CONSTITUTION:Metallic layers constituting a gate electrode for an MIS transistor while also constituting a scanning wire are formed by two layers of aluminum 19 and molybdenum silicide 20. When molybdenum silicide 20 having film thickness such as 500Angstrom one is applied on aluminum 19 having film thickness such as 1,000Angstrom one, the resistance value of the scanning wire lowers because a sheet resistance value lowers only by two figures or more as 0.3-0.5OMEGA/square. An amorphous semiconductor layer, which mainly comprises silicon and contains an impurity as a donor or an acceptor, is interposed among an a-Si layer 13 and source and drain wirings 5,15, and ohmic properties may be improved. An auxiliary capacitance 3 can also be formed through a transparent insulating layer 10, on the whole surface thereof a transparent conductive layer 9 and a picture element electrode 11 are shaped.

Inventors

• 👤 Kiyohiro Kawasaki
• 👤 清弘 川崎

Bibliographic Details