Method of manufacturing semiconductor device

Claim 1

A method for manufacturing a semiconductor device on a substrate, said semiconductor device including a plurality of semiconductor elements having a semiconductor region and a pair of electrodes disposed on said semiconductor region through an ohmic contact region disposed on said semiconductor region, comprising the sequential steps of: forming a semiconductor layer on said substrate, an ohmic contact layer on said semiconductor layer, and a conductive layer on said ohmic contact layer; removing a portion of said conductive layer, whereby said pair of electrodes are formed on said ohmic contact layer; removing a portion of said semiconductor layer and said ohmic contact layer to isolate each of said plurality of semiconductor elements; removing a portion of said ohmic contact layer between said pair of electrodes by utilizing said pair of electrodes as a mask.

Claim 2

A method for manufacturing a semiconductor device on a substrate, said semiconductor device including a plurality of semiconductor elements having a semiconductor region and a pair of electrodes disposed on said semiconductor region through an ohmic contact region disposed on said semiconductor region, comprising the sequential steps of: forming a semiconductor layer on said substrate, an ohmic contact layer on said semiconductor layer, and a conductive layer on said ohmic contact layer; removing a portion of said conductive layer, whereby said pair of electrodes are formed on said ohmic contact layer; removing a portion of said semiconductor layer and said ohmic contact layer to isolate each of said plurality of semiconductor elements; removing a portion of said ohmic contact layer between said pair of electrodes by utilizing said pair of electrodes as a mask.

Claim 8

A method for manufacturing a semiconductor device on a substrate, said semiconductor device including a plurality of semiconductor elements having a first semiconductor layer and a pair of electrodes disposed on said first semiconductor layer through a second semiconductor layer having a lower resistivity than said first semiconductor layer, comprising the sequential steps of: forming a first semiconductor layer on said substrate; forming a second semiconductor layer on said first semiconductor layer; and forming a conductive layer on said second semiconductor layer; removing a portion of said conductive layer, whereby said pair of electrodes are formed on said second semiconductor layer; removing a portion of said first semiconductor layer and said second semiconductor layer to isolate each of the plurality of semiconductor elements; and removing a portion of said second semiconductor layer between said pair of electrodes by utilizing said pair of electrodes as a mask.

Claim 9

A method for manufacturing a semiconductor device on a substrate, said semiconductor device including a plurality of semiconductor elements having a first semiconductor layer and a pair of electrodes disposed on said first semiconductor layer through a second semiconductor layer having a lower resistivity than said first semiconductor layer, comprising the sequential steps of: forming a first semiconductor layer on said substrate; forming a second semiconductor layer on said first semiconductor layer; and forming a conductive layer on said second semiconductor layer; removing a portion of said conductive layer, whereby said pair of electrodes are formed on said second semiconductor layer; removing a portion of said first semiconductor layer and said second semiconductor layer to isolate each of the plurality of semiconductor elements; and removing a portion of said second semiconductor layer between said pair of electrodes by utilizing said pair of electrodes as a mask.