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US4581099A Expired / Lapsed US ⏱️ 0.0 years remaining

Method for preparation of a photosensor

Assignee: Canon Inc
•
Filing: 1985-01-30
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Granted: 1986-04-08
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Expires: 2005-01-30
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Abstract

Abstract A method for preparing a photosensor having electrodes formed on a photoconductive layer through an intermediary ohmic contact layer is provided which comprises forming an ohmic contact layer on a photoconductive layer, forming electrodes with a desired shape on the ohmic contact layer, then removing the ohmic contact layer at the exposed portion for photoelectric transducing by the etching method and thereafter applying heat treatment, thereby forming a photosensor array.

Inventors

  • 👤 Masaki Fukaya
  • 👤 Teruhiko Furushima
  • 👤 Yuichi Masaki
  • 👤 Seiji Kakimoto

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-25 14:01
CPC Classifications
H; H10; H10F; H10F77/00; H10F77/20; H10F30/00; H10F30/10; H10F30/15; H10F39/00; H10F39/10; H10F39/12; H10F39/191; H10F71/00; H10F71/10; H10F71/103; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02P; Y02P70/00; Y02P70/50

Claims Analysis

Total Claims: 13
Claim 1
Independent Claim 68 words
A method for preparing a photosensor having electrodes formed on a photoconductive layer through an intermediary ohmic contact layer, which comprises forming an ohmic contact layer on a photoconductive layer, forming electrodes with a desired shape on the ohmic contact layer, then removing the ohmic contact layer at the exposed portion for photoelectric transducing by the etching method and thereafter applying heat treatment, thereby forming a photosensor array.
Claim 2
Independent Claim 68 words
A method for preparing a photosensor having electrodes formed on a photoconductive layer through an intermediary ohmic contact layer, which comprises forming an ohmic contact layer on a photoconductive layer, forming electrodes with a desired shape on the ohmic contact layer, then removing the ohmic contact layer at the exposed portion for photoelectric transducing by the etching method and thereafter applying heat treatment, thereby forming a photosensor array.
Claim 3
Dependent Claim 22 words
A method according to claim 1, wherein the photoconductive layer and the ohmic contact layer comprise an amorphous silicon as the matrix.
Claim 4
Dependent Claim 13 words
A method according to claim 1, wherein the etching method is plasma etching.
Claim 5
Dependent Claim 22 words
A method according to claim 3, wherein etching is performed with the use of a gas composed mainly of a carbon halide.
Claim 6
Dependent Claim 20 words
A method according to claim 1, wherein the heat treatment is conducted at a temperature of 350° C. or lower.
Claim 7
Dependent Claim 75 words
A method according to claim 5, wherein the heat treatment is conducted under the conditions selected from the following (A) to (D): (A) 30 minutes or longer in an atmosphere of 150° to 200° C; (B) 20 minutes or longer in an atmosphere of 200° to 250° C.; (C) 10 to 60 minutes in an atmosphere of 250° to 300° C.; and (D) 5 to 30 minutes in an atmosphere of 300° to 350° C.
Claim 8
Dependent Claim 43 words
A method according to claim 4, wherein the gas composed mainly of carbon halide is selected from CHF 3 , CC1 2 F 2 , CF 3 Br, CF 4 +C1 2 , CF 4 +O 2 and CF 4 +H 2 .
Claim 9
Dependent Claim 16 words
A method according to claim 1, wherein the heat treatment is conducted in N 2 atmosphere.
Claim 10
Dependent Claim 16 words
A method according to claim 1, wherein the heat treatment is conducted in H 2 atmosphere.
Claim 11
Dependent Claim 15 words
A method according to claim 1, wherein the heat treatment is conducted in Ar atmosphere.
Claim 12
Dependent Claim 15 words
A method according to claim 1, wherein the heat treatment is conducted in dry air.
Claim 13
Dependent Claim 14 words
A method according to claim 1, wherein the heat treatment is conducted under vacuum.

References Cited (Backward Citations)

US4069095A Cited
US4281208A Cited
US4390394A Cited
US4366229A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1989-04-07 1989-10-07 1990-04-08 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1993-04-07 1993-10-07 1994-04-08 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1997-04-07 1997-10-07 1998-04-08 $7700.00 Window Closed / Lapsed

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