US4545111A
Expired / Lapsed
US
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Method for making, parallel preprogramming or field programming of electronic matrix arrays
Assignee: Energy Conversion Devices Inc
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Filing: 1983-07-14
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Granted: 1985-10-08
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Expires: 2003-07-14
Abstract
Abstract A method of making a parallel programmed electronic matrix array including the steps of forming at least one layer of a phase changeable material on a conductive substrate, wherein the phase changeable material has a substantially nonconductive state and a comparatively high conductive state. The layer is formed in one of the states. The method also includes irradiating selected areas of the layer to simultaneously convert the selected areas of the layer to the other one of the states to form selected substantially nonconductive layer portions and selected comparatively high conductive layer portions. Thereafter, in a preprogrammed embodiment, first and second sets of electrically conductive address lines are formed on respective opposite sides of the layer. The address lines of the first and second sets are formed for crossing at an angle to form a plurality of crossover points with the selected substantially nonconductive layer portions and the selected comparatively high conductive layer portions therebetween. In a field programmable array, the areas are irradiatd through one set of lines.
Inventors
- 👤 Robert R. Johnson
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 06:11
CPC Classifications
H; H10; H10B; H10B63/00; H10B63/20; H10B69/00; H10B63/80; H10B63/82; H10N; H10N70/00; H10N70/20; H10N70/231; H10N70/257; H10N70/801; H10N70/821; H10N70/826; H10N70/881; H10N70/882; H10N70/8828
Claims Analysis
Total Claims: 61
Claim 1
Independent Claim
160 words
A method of making an electronic matrix array comprising the steps of: forming at least one layer of phase changeable material on a conductive substrate, said phase changeable material having a substantially nonconductive state and a comparatively high conductive state, said layer being formed in one of said states; parallel programming said layer by irradiating selected areas of said layer to simultaneously convert said selected areas of said layer to the other one of said states to form selected substantially nonconductive portions of said layer and selected comparatively high conductive portions of said layer; forming first and second sets of electrically conductive address lines on respective opposite sides of said layer, said address lines of said first and second sets being formed for crossing at an angle to form a plurality of crossover points; and said selected substantially nonconductive layer portions and said selected comparatively high conductive layer portions being formed between said first and second sets of address lines.
Claim 2
Independent Claim
160 words
A method of making an electronic matrix array comprising the steps of: forming at least one layer of phase changeable material on a conductive substrate, said phase changeable material having a substantially nonconductive state and a comparatively high conductive state, said layer being formed in one of said states; parallel programming said layer by irradiating selected areas of said layer to simultaneously convert said selected areas of said layer to the other one of said states to form selected substantially nonconductive portions of said layer and selected comparatively high conductive portions of said layer; forming first and second sets of electrically conductive address lines on respective opposite sides of said layer, said address lines of said first and second sets being formed for crossing at an angle to form a plurality of crossover points; and said selected substantially nonconductive layer portions and said selected comparatively high conductive layer portions being formed between said first and second sets of address lines.
Claim 3
Dependent Claim
50 words
The method as defined in claim 1, wherein each of said comparatively high conductive layer portions are formed to define a discrete area of said layer which is not substantially larger than the area of said crossover points defined by the overlapping juxtaposed common surface areas of said address lines.
Claim 4
Dependent Claim
24 words
The method as defined in claim 1, wherein said step of irradiating selected areas of said layer includes irradiating said layer through a mask.
Claim 5
Dependent Claim
21 words
The method as defined in claim 3, wherein said step of irradiating includes cooling said layer at least during said irradiating.
Claim 6
Dependent Claim
24 words
The method as defined in claim 3, wherein said step of irradiating said layer includes laying said mask over said layer in contact therewith.
Claim 7
Dependent Claim
31 words
The method as defined in claim 1, wherein said step of forming said address lines includes forming one of said sets of address lines by removing portions of said conductive substrate.
Claim 8
Dependent Claim
64 words
The method as defined in claim 1, wherein said step of forming said address lines includes forming said lines after irradiating said areas and detecting the locations of the layer portions of one of said states and thereafter aligning one of said sets of address lines on said layer according to the detected locations of said layer portions of said one of said states.
Claim 9
Dependent Claim
25 words
The method as defined in claim 1, wherein said step of forming said layer of phase changeable material includes depositing a layer of amorphous material.
Claim 10
Dependent Claim
18 words
The method as defined in claim 8, wherein said layer is formed from an amorphous silicon alloy material.
Claim 11
Dependent Claim
16 words
The method as defined in claim 8, wherein said layer is formed from a chalcogenide material.
Claim 12
Dependent Claim
39 words
The method as defined in claim 8, wherein said step of irradiating selected areas of said layer includes irradiating said selected areas with light for changing said amorphous material to said comparatively high conductive state within said selected areas.
Claim 13
Dependent Claim
37 words
The method as defined in claim 1, wherein said step of forming said phase changeable material includes depositing a plurality of layers of semiconductor material on said substrate to form a continuous diode structure on said substrate.
Claim 14
Dependent Claim
34 words
The method as defined in claim 1, including the further step of forming a continuous diode structure over said substrate and wherein said layer of phase changeable material is formed over said diode structure.
Claim 15
Dependent Claim
45 words
The method as defined in claim 13, wherein said step of forming said diode structure includes depositing a first doped semiconductor layer over said substrate, depositing an intrinsic semiconductor layer over said first layer, and depositing a second doped semiconductor layer over said intrinsic layer.
Claim 16
Dependent Claim
17 words
The method as defined in claim 14, wherein said semiconductor layers are formed of amorphous semiconductor material.
Claim 17
Dependent Claim
18 words
The method as defined in claim 13, wherein said layer of phase changeable material is a chalcogenide material.
Claim 18
Dependent Claim
19 words
The method as defined in claim 13, wherein said layer of phase changeable material is an amorphous silicon alloy.
Claim 19
Dependent Claim
25 words
The method as defined in claim 1, further including the step of removing said comparatively high conductive layer portions prior to forming said address lines.
Claim 20
Dependent Claim
40 words
The method as defined in claim 1, wherein said step of forming said address lines includes forming said lines prior to irradiating said areas and forming at least one of said sets of address lines of substantially irradiation transparent material.
Claim 21
Dependent Claim
29 words
The method as defined in claim 19, wherein said step of irradiating selected areas of said layer includes irradiating said layer through a mask and through said transparent lines.
Claim 22
Dependent Claim
25 words
The method as defined in claim 20, wherein said step of irradiating said layer includes laying said mask over said transparent lines in contact therewith.
Claim 23
Dependent Claim
22 words
The method as defined in claim 1, including testing said selected portions to insure that the portions are in their programmed states.
Claim 24
Dependent Claim
27 words
The method as defined in claim 22, wherein said phase changeable material is resettable, further including bulk erasing said layer so that it can then be reprogrammed.
Claim 25
Dependent Claim
13 words
The method as defined in claim 22, including optically testing said selected portions.
Claim 26
Dependent Claim
13 words
The method as defined in claim 22, including electrically testing said selected portions.
Claim 27
Dependent Claim
17 words
The method as defined in claim 22, including reprogramming selected non-converted areas which did not change states.
Claim 28
Dependent Claim
12 words
The method as defined in claim 26, including optically reprogramming said areas.
Claim 29
Dependent Claim
12 words
The method as defined in claim 26, including electrically reprogramming said areas.
Claim 30
Dependent Claim
31 words
A method as defined in claim 1, including the further step of detecting the difference in the electrical characteristics of said selected portions to determine the states of said selected portions.
Claim 31
Independent Claim
169 words
A method of making a memory matrix array comprising the steps of: forming a continuous selection means structure; forming a layer of phase changeable material over said selection means structure, said phase changeable material having a substantially nonconductive state and a comparatively high conductive state, said layer of phase changeable material being formed in one of said states; parallel programming said layer by converting selected areas of said layer of phase changeable material simultaneously to the other one of said states to form selected substantially nonconductive portions of said layer and selected comparatively high conductive portions of said layer; forming a first set of electrically conductive address lines over said selection means structure; forming a second set of electrically conductive address lines over said layer with said selection means structure therebetween crossing said first set of address lines at an angle to form a plurality of crossover points; and said selected comparatively high conductive layer portions and said selected substantially nonconductive layer portions being formed within said crossover points.
Claim 32
Independent Claim
169 words
A method of making a memory matrix array comprising the steps of: forming a continuous selection means structure; forming a layer of phase changeable material over said selection means structure, said phase changeable material having a substantially nonconductive state and a comparatively high conductive state, said layer of phase changeable material being formed in one of said states; parallel programming said layer by converting selected areas of said layer of phase changeable material simultaneously to the other one of said states to form selected substantially nonconductive portions of said layer and selected comparatively high conductive portions of said layer; forming a first set of electrically conductive address lines over said selection means structure; forming a second set of electrically conductive address lines over said layer with said selection means structure therebetween crossing said first set of address lines at an angle to form a plurality of crossover points; and said selected comparatively high conductive layer portions and said selected substantially nonconductive layer portions being formed within said crossover points.
Claim 33
Dependent Claim
32 words
The method as defined in claim 30, wherein said step of converting selected areas of said layer of phase changeable material simultaneously to the other said state includes irradiating said selected areas.
Claim 34
Dependent Claim
15 words
The method as defined in claim 31, wherein said selected areas are irradiated with light.
Claim 35
Dependent Claim
19 words
The method as defined in claim 32, wherein said irradiating includes cooling said layer at least during said irradiating.
Claim 36
Dependent Claim
16 words
The method as defined in claim 31, wherein said selected areas are irradiated through a mask.
Claim 37
Dependent Claim
21 words
The method as defined in claim 34, further including the step of laying said mask over said layer in contact therewith.
Claim 38
Dependent Claim
35 words
The method as defined in claim 30, wherein said continuous selection means structure is formed on a conductive substrate and wherein said first set of address lines is formed by removing portions of said substrate.
Claim 39
Dependent Claim
60 words
The method as defined in claim 30, wherein said second set of address lines is formed after converting said portions by detecting the locations of the layer portions of one of said states and thereafter aligning said second set of address lines on said layer according to the detected locations of said layer portions of said one of said states.
Claim 40
Dependent Claim
25 words
The method as defined in claim 30, wherein said step of forming said layer of phase changeable material includes depositing a layer of amorphous material.
Claim 41
Dependent Claim
18 words
The method as defined in claim 38, wherein said layer is formed from an amorphous silicon alloy material.
Claim 42
Dependent Claim
16 words
The method as defined in claim 38, wherein said layer is formed from a chalcogenide material.
Claim 43
Dependent Claim
35 words
The method as defined in claim 38, wherein said step of converting said selected areas of said layer to the other said states include converting said amorphous material in said selected areas to crystalline material.
Claim 44
Dependent Claim
23 words
The method as defined in claim 30, wherein said step of forming said continuous selection means structure includes forming a continuous diode structure.
Claim 45
Dependent Claim
18 words
The method as defined in claim 42, wherein said continuous diode structure is formed on a conductive substrate.
Claim 46
Dependent Claim
43 words
The method as defined in claim 43, wherein said diode structure is formed by depositing a first doped semiconductor layer over said substrate, depositing an intrinsic semiconductor layer over said first layer, and depositing a second doped semiconductor layer over said intrinsic layer.
Claim 47
Dependent Claim
17 words
The method as defined in claim 44, wherein said semiconductor layers are formed of amorphous semiconductor material.
Claim 48
Dependent Claim
20 words
The method as defined in claim 45, wherein said layer of phase changeable material is formed of a chalcogenide material.
Claim 49
Dependent Claim
21 words
The method as defined in claim 45, wherein said layer of phase changeable material is formed of an amorphous silicon alloy.
Claim 50
Dependent Claim
44 words
The method as defined in claim 30, including the further step of increasing the resistivity of the portion of said selection means structure and said layer of phase changeable material left exposed by said address lines to further isolate said crossover point layer portions.
Claim 51
Dependent Claim
28 words
The method as defined in claim 30, further including the step of removing said highly electrically conductive layer portions prior to forming said second set of address lines.
Claim 52
Dependent Claim
40 words
The method as defined in claim 30, wherein said step of forming said address lines includes forming said lines prior to converting said areas and forming at least one of said sets of address lines of substantially irradiation transparent material.
Claim 53
Dependent Claim
25 words
The method as defined in claim 50, wherein said step of converting includes irradiating said selected areas through a mask and through said transparent lines.
Claim 54
Dependent Claim
25 words
A method as defined in claim 51, wherein said step of irradiating said layer includes laying said mask over said transparent lines in contact therewith.
Claim 55
Dependent Claim
22 words
The method as defined in claim 30, including testing said selected portions to insure that the portions are in their programmed states.
Claim 56
Dependent Claim
27 words
The method as defined in claim 53, wherein said phase changeable material is resettable, further including bulk erasing said layer so that it can then be reprogrammed.
Claim 57
Dependent Claim
13 words
The method as defined in claim 53, including optically testing said selected portions.
Claim 58
Dependent Claim
13 words
The method as defined in claim 53, including electrically testing said selected portions.
Claim 59
Dependent Claim
17 words
The method as defined in claim 53, including reprogramming selected non-converted areas which did not change states.
Claim 60
Dependent Claim
12 words
The method as defined in claim 57, including optically reprogramming said areas.
Claim 61
Dependent Claim
12 words
The method as defined in claim 57, including electrically reprogramming said areas.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1988-10-07 | 1989-04-08 | 1989-10-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1992-10-07 | 1993-04-08 | 1993-10-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1996-10-07 | 1997-04-08 | 1997-10-08 | $7700.00 | Window Closed / Lapsed |