Patent US5674647A successfully refreshed from Google Patents.
US5674647A
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Phase shift mask and manufacturing method thereof and exposure method using phase shift mask
Assignee: Ulvac Coating Corp
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Filing: 1995-10-24
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Granted: 1997-10-07
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Expires: 2015-10-24
Abstract
Abstract A second light transmit portion of a phase shift mask is formed of a molybdenum silicide nitride oxide, or a molybdenum silicide oxide, or a chromium nitride oxide, or a chromium oxide, or a chromium carbide nitride oxide film converting a phase of transmitted exposure light by 180 DEG and having the transmittance of at least 2% and less than 5%. In the manufacturing method of the second light transmit portion, a molybdenum silicide nitride oxide film, or a molybdenum silicide oxide film, or a chromium nitride oxide film, or a chromium oxide film, or a carbide nitride oxide film is formed by a sputtering method. Consequently, with a conventional sputtering apparatus, the second light transmit portion can be formed, and additionally, etching process of the phase shifter portion is required only once, so that probabilities of defects and errors in the manufacturing process can be decreased.
Inventors
- 👤 Akihiko Isao
- 👤 Ryoichi Kobayashi
- 👤 Nobuyuki Yoshioka
- 👤 Yaichiro Watakabe
- 👤 Junji Miyazaki
- 👤 Kouichiro Narimatsu
- 👤 Shigenori Yamashita
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 22:56
CPC Classifications
G; G03; G03F; G03F1/00; G03F1/26; G03F1/32; G03F1/38; G03F1/54; G03F1/68; G03F1/80
Claims Analysis
Total Claims: 76
Claim 1
Independent Claim
126 words
A phase shift mask, comprising: a substrate transmitting exposure light; and a phase shift pattern formed on a main surface of the substrate, wherein said phase shift pattern includes a first light transmit portion through which said substrate is exposed, and a second light transmit portion consisting of a single material having a phase of transmitted exposure light converted by 180° with respect to the phase of exposure light transmitted through said first light transmit portion, said single material having a transmittance of at least 2% and less than 5%, wherein said single material is selected from the group consisting of an oxide of a metal, a nitride oxide of a metal, an oxide of a metal silicide and a nitride oxide of a metal silicide.
Claim 2
Dependent Claim
126 words
A phase shift mask, comprising: a substrate transmitting exposure light; and a phase shift pattern formed on a main surface of the substrate, wherein said phase shift pattern includes a first light transmit portion through which said substrate is exposed, and a second light transmit portion consisting of a single material having a phase of transmitted exposure light converted by 180° with respect to the phase of exposure light transmitted through said first light transmit portion, said single material having a transmittance of at least 2% and less than 5%, wherein said single material is selected from the group consisting of an oxide of a metal, a nitride oxide of a metal, an oxide of a metal silicide and a nitride oxide of a metal silicide.
Claim 3
Dependent Claim
46 words
The phase shift mask according to claim 1, wherein said single material is selected from the group consisting of an oxide of chromium, a nitride oxide of chromium, a carbide nitride oxide of chromium, an oxide of molybdenum silicide and a nitride oxide of molybdenum silicide.
Claim 4
Dependent Claim
35 words
The phase shift mask according to claim 2, wherein the single material is selected from the group consisting of an oxide of chromium, a nitride oxide of chromium and a carbide nitride oxide of chromium.
Claim 5
Dependent Claim
31 words
The phase shift mask according to claim 3, wherein said single material is selected from the group consisting of an oxide of molybdenum silicide and a nitride oxide of molybdenum silicide.
Claim 6
Dependent Claim
139 words
An exposure method using a phase shift mask, comprising the steps of: applying a resist film onto a pattern formation layer; and exposing said resist film with the phase shift mask having a phase shift pattern having a first light transmit portion formed on a substrate transmitting exposure light and having said substrate exposed, and a second light transmit portion consisting of a single material having a phase of transmitted exposure light converted by 180° with respect to a phase of exposure light transmitted through said first light transmit portion, said single material having a transmittance of at least 2% and less than 5%, wherein said single material is selected from the group consisting of an oxide of a metal, a nitride oxide of metal, an oxide of a metal silicide and a nitride oxide of a metal silicide.
Claim 7
Dependent Claim
139 words
An exposure method using a phase shift mask, comprising the steps of: applying a resist film onto a pattern formation layer; and exposing said resist film with the phase shift mask having a phase shift pattern having a first light transmit portion formed on a substrate transmitting exposure light and having said substrate exposed, and a second light transmit portion consisting of a single material having a phase of transmitted exposure light converted by 180° with respect to a phase of exposure light transmitted through said first light transmit portion, said single material having a transmittance of at least 2% and less than 5%, wherein said single material is selected from the group consisting of an oxide of a metal, a nitride oxide of metal, an oxide of a metal silicide and a nitride oxide of a metal silicide.
Claim 8
Dependent Claim
44 words
The method according to claim 5, wherein said single material is selected from the group consisting of an oxide of chromium, a nitride oxide of chromium, a carbide nitride oxide of chromium, an oxide of molybdenum silicide and a nitride oxide of molybdenum silicide.
Claim 9
Dependent Claim
33 words
The method according to claim 6, wherein said single material is selected from the group consisting of an oxide of chromium, a nitride oxide of chromium, and a carbide nitride oxide of chromium.
Claim 10
Dependent Claim
29 words
The method according to claim 6, wherein said single material is selected from the group consisting of an oxide of molybdenum silicide and a nitride oxide of molybdenum silicide.
Claim 11
Independent Claim
106 words
A method of manufacturing a phase shift mask, comprising the steps of: forming on a main surface of substrate, by a sputtering method, a phase shifter film of a prescribed thickness having a phase of transmitted exposure light by 180°, and having the transmittance of at least 2% and less than 5% forming a resist film having a prescribed pattern on the phase shifter film; and etching said phase shifter film by a dry etching method with the resist film as a mask to form a first light transmit portion having said substrate exposed and a second light transmit portion made of said phase shifter film.
Claim 12
Independent Claim
106 words
A method of manufacturing a phase shift mask, comprising the steps of: forming on a main surface of substrate, by a sputtering method, a phase shifter film of a prescribed thickness having a phase of transmitted exposure light by 180°, and having the transmittance of at least 2% and less than 5% forming a resist film having a prescribed pattern on the phase shifter film; and etching said phase shifter film by a dry etching method with the resist film as a mask to form a first light transmit portion having said substrate exposed and a second light transmit portion made of said phase shifter film.
Claim 13
Dependent Claim
49 words
The method of manufacturing the phase shifter mask according to claim 9, wherein the step of forming said phase shifter film includes the step of forming a film of an oxide of molybdenum silicide with a target of molybdenum silicide in a mixed gas atmosphere of argon and oxygen.
Claim 14
Dependent Claim
29 words
The method of manufacturing the phase shift mask according to claim 10, wherein said mixed gas includes 73 to 76% argon and oxygen of the remaining percent by volume.
Claim 15
Dependent Claim
37 words
The method of manufacturing the phase shift mask according to claim 10, wherein said step of etching said phase shifter film by a dry etching method is performed with a mixed gas of carbon fluoride and oxygen.
Claim 16
Dependent Claim
52 words
The method of manufacturing the phase shift mask according to claim 9, wherein said step of forming the phase shifter film includes the step of forming a film made of a nitride oxide of molybdenum silicide with a target of molybdenum silicide in a mixed gas atmosphere of argon, oxygen and nitrogen.
Claim 17
Dependent Claim
32 words
The method of manufacturing the phase shift mask according to claim 13, wherein said mixed gas includes 57 to 79% argon, 7 to 18% oxygen, and 4 to 32% nitrogen by volume.
Claim 18
Dependent Claim
48 words
The method of manufacturing the phase shift mask according to claim 9, wherein said step of forming the phase shifter film includes the step of forming a film made of an oxide of chromium with a target of chromium in a mixed gas atmosphere of argon and oxygen.
Claim 19
Dependent Claim
29 words
The method of manufacturing a phase shift mask according to claim 15, wherein said mixed gas includes 95 to 96% argon and oxygen of the remaining percent by volume.
Claim 20
Dependent Claim
56 words
The method of manufacturing the phase shift mask according to claim 15, wherein said step of etching said phase shifter film by a dry etching method is performed with a gas selected from the group consisting of a mixed gas of methylene chloride and oxygen, a mixed gas of choline and oxygen, and a choline gas.
Claim 21
Dependent Claim
50 words
The method of manufacturing the phase shift mask according to claim 9, wherein said step of forming the phase shifter film includes the step of forming a film made of a nitride oxide of chromium with a target of chromium in a mixed gas atmosphere of argon, oxygen and nitrogen.
Claim 22
Dependent Claim
32 words
The method of manufacturing the phase shift mask according to claim 18, wherein said mixed gas includes 82 to 83% argon, 4 to 5% oxygen, and 12 to 13% nitrogen by volume.
Claim 23
Dependent Claim
50 words
The method of manufacturing the phase shift mask according to claim 9, wherein said step of forming the phase shifter film includes the step of forming a film made of a nitride oxide of chromium with a target of chromium in a mixed gas atmosphere of argon and nitrogen monoxide.
Claim 24
Dependent Claim
30 words
The method of manufacturing the phase shift mask according to claim 20, wherein said mixed gas includes 75 to 87% argon, and nitrogen monoxide of the remaining percent by volume.
Claim 25
Dependent Claim
51 words
The method of manufacturing the phase shift mask according to claim 9, wherein said step of forming the phase shifter film includes the step of forming a film made of a carbide nitride oxide of chromium with a target of chromium in a mixed gas atmosphere of argon, oxygen and methane.
Claim 26
Dependent Claim
32 words
The method of manufacturing the phase shift mask according to claim 22, wherein said mixed gas includes 78 to 79% argon, 12 to 14% oxygen, and 8 to 9% methane by volume.
Claim 27
Dependent Claim
29 words
The method of manufacturing the phase shift mask according to claim 9, wherein said step of forming the phase shifter film includes the step of forming an antistatic film.
Claim 28
Dependent Claim
49 words
The method of manufacturing the phase shift mask according to claim 24, wherein said step of forming the antistatic film includes the step of forming a molybdenum film by a sputtering method between the step of forming said phase shifter film and the step of forming said resist film.
Claim 29
Dependent Claim
49 words
The method of manufacturing the phase sift mask according to claim 24, wherein said step of forming the antistatic film includes the step of forming a chromium film by a sputtering method between the step of forming said phase shifter film and the step of forming said resist film.
Claim 30
Dependent Claim
43 words
The method of manufacturing the phase shift mask according to claim 9, wherein said step of forming the phase shifter film includes the step of forming heat processing at or above 200° C. after forming said phase shifter film by a sputtering method.
Claim 31
Dependent Claim
86 words
A phase shifter film formed on a substrate transmitting exposure light, wherein the phase of transmitted exposure light is converted by 180° with respect to the phase of exposure light transmitted only through said substrate, the transmittance is at lease 2% and less than 5%, said film being formed of a single film selected from the group consisting of an oxide film of a metal, a nitride oxide film of a metal, an oxide film of metal silicide, and a nitride oxide film of metal silicide.
Claim 32
Dependent Claim
86 words
A phase shifter film formed on a substrate transmitting exposure light, wherein the phase of transmitted exposure light is converted by 180° with respect to the phase of exposure light transmitted only through said substrate, the transmittance is at lease 2% and less than 5%, said film being formed of a single film selected from the group consisting of an oxide film of a metal, a nitride oxide film of a metal, an oxide film of metal silicide, and a nitride oxide film of metal silicide.
Claim 33
Dependent Claim
59 words
The phase shifter film as recited in claim 28, wherein the film formed of the single material is a single film selected from the group consisting of an oxide film of chromium, a nitride oxide film of chromium, a carbide nitride oxide film of chromium, an oxide film of molybdenum silicide, and a nitride oxide film of molybdenum silicide.
Claim 34
Independent Claim
79 words
A method of manufacturing a phase shifter film of a prescribed thickness on a main surface of a substrate transmitting exposure light by means of sputtering, said film having a phase of transmitted exposure light converted by 180° and having a transmittance in the range from 2% to 5%, wherein a phase shifter film consisting of an oxide film of molybdenum silicide is formed in a mixture gas atmosphere of argon and oxygen, using a target of molybdenum silicide.
Claim 35
Independent Claim
79 words
A method of manufacturing a phase shifter film of a prescribed thickness on a main surface of a substrate transmitting exposure light by means of sputtering, said film having a phase of transmitted exposure light converted by 180° and having a transmittance in the range from 2% to 5%, wherein a phase shifter film consisting of an oxide film of molybdenum silicide is formed in a mixture gas atmosphere of argon and oxygen, using a target of molybdenum silicide.
Claim 36
Dependent Claim
30 words
The method of manufacturing a phase shifter film as recited in claim 30, wherein, said mixture gas includes 73% to 76% argon and oxygen of the remaining percent by volume.
Claim 37
Independent Claim
82 words
A method of manufacturing a phase shifter film of a prescribed thickness on a main surface of a substrate transmitting exposure light by means of sputtering, said film having a phase of transmitted exposure light converted by 180° and having a transmittance of at least 2% and less than 5%, wherein a phase shifter film consisting of a nitride oxide film of molybdenum silicide is formed in a mixture gas atmosphere of argon, oxygen and nitrogen, using a target of molybdenum silicide.
Claim 38
Independent Claim
82 words
A method of manufacturing a phase shifter film of a prescribed thickness on a main surface of a substrate transmitting exposure light by means of sputtering, said film having a phase of transmitted exposure light converted by 180° and having a transmittance of at least 2% and less than 5%, wherein a phase shifter film consisting of a nitride oxide film of molybdenum silicide is formed in a mixture gas atmosphere of argon, oxygen and nitrogen, using a target of molybdenum silicide.
Claim 39
Dependent Claim
33 words
The method of manufacturing a phase shifter film as recited in claim 32, wherein said mixture gas includes 57% to 79% argon, 17% to 18% oxygen, and 4% to 30% nitrogen by volume.
Claim 40
Independent Claim
78 words
A method of manufacturing a phase shifter film of a prescribed thickness on a main surface of a substrate transmitting exposure light by means of sputtering, said film having a phase of transmitted exposure light converted by 180° and having a transmittance of at least 2% and less than 5%, wherein a phase shifter film consisting of an oxide film of chromium is formed in a mixture gas atmosphere of argon and oxygen, using a target of chromium.
Claim 41
Independent Claim
78 words
A method of manufacturing a phase shifter film of a prescribed thickness on a main surface of a substrate transmitting exposure light by means of sputtering, said film having a phase of transmitted exposure light converted by 180° and having a transmittance of at least 2% and less than 5%, wherein a phase shifter film consisting of an oxide film of chromium is formed in a mixture gas atmosphere of argon and oxygen, using a target of chromium.
Claim 42
Dependent Claim
30 words
The method of manufacturing a phase shifter film as recited in claim 34, wherein said mixture gas includes 95% to 96% argon and oxygen of the remaining percent by volume.
Claim 43
Independent Claim
80 words
A method of manufacturing a phase shifter film of a prescribed thickness on a main surface of a substrate transmitting exposure light by means of sputtering, said film having a phase of transmitted exposure light converted by 180° and having a transmittance of at least 2% and less than 5%, wherein a phase shifter film consisting of a nitride oxide film of chromium is formed in a mixture gas atmosphere of argon, oxygen and nitrogen, using a target of chromium.
Claim 44
Independent Claim
80 words
A method of manufacturing a phase shifter film of a prescribed thickness on a main surface of a substrate transmitting exposure light by means of sputtering, said film having a phase of transmitted exposure light converted by 180° and having a transmittance of at least 2% and less than 5%, wherein a phase shifter film consisting of a nitride oxide film of chromium is formed in a mixture gas atmosphere of argon, oxygen and nitrogen, using a target of chromium.
Claim 45
Dependent Claim
33 words
The method of manufacturing a phase shifter film as recited in claim 36, wherein said mixture gas includes 82% to 83% argon, 4% to 5% oxygen and 12% to 13% nitrogen by volume.
Claim 46
Independent Claim
75 words
A method of manufacturing a phase shifter film of a prescribed thickness on a main surface of a substrate transmitting exposure light by means of sputtering, said film having a phase of transmitted exposure light converted by 180° and having a transmittance of at least 2% and less than 5%, wherein a phase shifter film consisting of a nitride oxide film of chromium is formed in a mixture gas atmosphere of argon and nitrogen monoxide.
Claim 47
Independent Claim
75 words
A method of manufacturing a phase shifter film of a prescribed thickness on a main surface of a substrate transmitting exposure light by means of sputtering, said film having a phase of transmitted exposure light converted by 180° and having a transmittance of at least 2% and less than 5%, wherein a phase shifter film consisting of a nitride oxide film of chromium is formed in a mixture gas atmosphere of argon and nitrogen monoxide.
Claim 48
Dependent Claim
31 words
The method of manufacturing a phase shifter film as recited in claim 38, wherein said mixture gas includes 75% to 87% argon and nitrogen monoxide of the remaining percent by volume.
Claim 49
Independent Claim
82 words
A method of manufacturing a phase shifter film of a prescribed thickness on a main surface of a substrate transmitting exposure light by means of sputtering, said film having a phase of transmitted exposure light converted by 180° and having a transmittance of at least 2% and less than 5%, wherein a phase shifter film consisting of a carbide nitride oxide film of chromium is formed in a mixture gas atmosphere of argon, oxygen, nitrogen and methane, using a target of chromium.
Claim 50
Independent Claim
82 words
A method of manufacturing a phase shifter film of a prescribed thickness on a main surface of a substrate transmitting exposure light by means of sputtering, said film having a phase of transmitted exposure light converted by 180° and having a transmittance of at least 2% and less than 5%, wherein a phase shifter film consisting of a carbide nitride oxide film of chromium is formed in a mixture gas atmosphere of argon, oxygen, nitrogen and methane, using a target of chromium.
Claim 51
Dependent Claim
38 words
The method of manufacturing a phase shifter film as recited in claim 40, wherein said mixture gas includes 78% to 79% argon, 12% to 14% oxygen, 8% to 9% methane and nitrogen of the remaining percent by volume.
Claim 52
Dependent Claim
112 words
A blank for a phase shift mask including a substrate transmitting exposure light and a phase shifter film formed on a main surface of the substrate, wherein in said phase shifter film the phase of exposure light transmitted through said blank is converted by 180° with respect to the phase of exposure light transmitted only through said substrate, the transmittance is at least 2$ and less than 5%, and said phase shifter film is formed of a single material selected from the group consisting of an oxide film of a metal, a nitride oxide film of a metal, an oxide film of metal silicide and a nitride oxide film of metal silicide.
Claim 53
Dependent Claim
112 words
A blank for a phase shift mask including a substrate transmitting exposure light and a phase shifter film formed on a main surface of the substrate, wherein in said phase shifter film the phase of exposure light transmitted through said blank is converted by 180° with respect to the phase of exposure light transmitted only through said substrate, the transmittance is at least 2$ and less than 5%, and said phase shifter film is formed of a single material selected from the group consisting of an oxide film of a metal, a nitride oxide film of a metal, an oxide film of metal silicide and a nitride oxide film of metal silicide.
Claim 54
Dependent Claim
57 words
The blank for a phase shift mask as recited in claim 42, wherein said single material is a material selected from the group consisting of an oxide film of chromium, a nitride oxide film of chromium, a carbide nitride oxide film of chromium, an oxide film of molybdenum silicide, and a nitride oxide film of molybdenum silicide.
Claim 55
Dependent Claim
20 words
The blank for a phase shift mask s recited in claim 43 further comprising a metal film on said substrate.
Claim 56
Dependent Claim
26 words
The blank for a phase shift mask as recited in claim 44, wherein said metal film is one of a chromium film and a molybdenum film.
Claim 57
Dependent Claim
20 words
The blank for a phase shift mask as recited in claim 42 further comprising a resist film on said substrate.
Claim 58
Independent Claim
89 words
A method of manufacturing a blank for a phase shift mask comprising forming a phase shifter film of a prescribed thickness on a main surface of a substrate transmitting exposure light by means of sputtering, said film having a phase of transmitted exposure light converted by 180° and having a transmittance of at least 2% and less than 5%, wherein a phase shifter film consisting of an oxide film of molybdenum silicide is formed in a mixture gas atmosphere of argon and oxygen, using a target of molybdenum silicide.
Claim 59
Independent Claim
89 words
A method of manufacturing a blank for a phase shift mask comprising forming a phase shifter film of a prescribed thickness on a main surface of a substrate transmitting exposure light by means of sputtering, said film having a phase of transmitted exposure light converted by 180° and having a transmittance of at least 2% and less than 5%, wherein a phase shifter film consisting of an oxide film of molybdenum silicide is formed in a mixture gas atmosphere of argon and oxygen, using a target of molybdenum silicide.
Claim 60
Dependent Claim
33 words
The method of manufacturing a blank for a phase shift mask as recited in claim 47, wherein said mixture gas includes 73% to 76% argon, and oxygen of the remaining percent by volume.
Claim 61
Dependent Claim
34 words
The method of manufacturing a blank for a phase shift mask as recited in claim 47 further comprising a heat treatment at 200° C. or higher after forming said phase shifter film by sputtering.
Claim 62
Independent Claim
90 words
A method of manufacturing a blank for a phase shift mask comprising forming a phase shifter film of a prescribed thickness on a main surface of a substrate transmitting exposure light by means of sputtering, said film having a phase of transmitted exposure light converted by 180° and a transmittance of at least 2% and less than 5%, wherein a phase shifter film consisting of a nitride oxide film of molybdenum silicide is formed in a mixture gas atmosphere of argon, oxygen and nitrogen, using a target of molybdenum silicide.
Claim 63
Independent Claim
90 words
A method of manufacturing a blank for a phase shift mask comprising forming a phase shifter film of a prescribed thickness on a main surface of a substrate transmitting exposure light by means of sputtering, said film having a phase of transmitted exposure light converted by 180° and a transmittance of at least 2% and less than 5%, wherein a phase shifter film consisting of a nitride oxide film of molybdenum silicide is formed in a mixture gas atmosphere of argon, oxygen and nitrogen, using a target of molybdenum silicide.
Claim 64
Dependent Claim
36 words
The method of manufacturing a blank for a phase shift mask as recited in claim 50, wherein said mixture gas includes 57% to 79% argon, 17% to 18% oxygen, and 4% to 30% nitrogen by volume.
Claim 65
Independent Claim
77 words
A method of manufacturing a blank for a phase shift mask on a main surface of a substrate transmitting exposure light by means of sputtering, said film having a phase of transmitted exposure light converted by 180° and having a transmittance of at least 2% and less than 5%, wherein a phase shifter film consisting of an oxide film of chromium is formed in a mixture gas atmosphere of argon and oxygen, using a target of chromium.
Claim 66
Independent Claim
77 words
A method of manufacturing a blank for a phase shift mask on a main surface of a substrate transmitting exposure light by means of sputtering, said film having a phase of transmitted exposure light converted by 180° and having a transmittance of at least 2% and less than 5%, wherein a phase shifter film consisting of an oxide film of chromium is formed in a mixture gas atmosphere of argon and oxygen, using a target of chromium.
Claim 67
Dependent Claim
33 words
The method of manufacturing a blank for a phase shift mask as recited in claim 52, wherein said mixture gas includes 95% to 96% argon and oxygen of the remaining percent by volume.
Claim 68
Independent Claim
83 words
A method of manufacturing a blank for a phase shift mask of a prescribed thickness on a main surface of a substrate transmitting exposure light by means of sputtering, said film having a phase of transmitted exposure light converted by 180° and having a transmittance of at least 2% and less than 5%, wherein a phase shifter film consisting of a nitride oxide film of chromium is formed in a mixture gas atmosphere of argon, oxygen and nitrogen, using a target of chromium.
Claim 69
Independent Claim
83 words
A method of manufacturing a blank for a phase shift mask of a prescribed thickness on a main surface of a substrate transmitting exposure light by means of sputtering, said film having a phase of transmitted exposure light converted by 180° and having a transmittance of at least 2% and less than 5%, wherein a phase shifter film consisting of a nitride oxide film of chromium is formed in a mixture gas atmosphere of argon, oxygen and nitrogen, using a target of chromium.
Claim 70
Dependent Claim
36 words
The method of manufacturing a blank for a phase shift mask as recited in claim 53, wherein said mixture gas includes 82% to 83% argon, 4% to 5% oxygen, and 12% to 13% nitrogen by volume.
Claim 71
Independent Claim
83 words
A method of manufacturing a blank for a phase shift mask of a prescribed thickness on a main surface of a substrate transmitting exposure light by means of sputtering, said film having a phase of transmitted exposure light converted by 180° and having a transmittance of at least 2% and less than 5%, wherein a phase shifter film consisting of a nitride oxide film of chromium is formed in a mixture gas atmosphere of argon and nitrogen monoxide, using a target of chromium.
Claim 72
Independent Claim
83 words
A method of manufacturing a blank for a phase shift mask of a prescribed thickness on a main surface of a substrate transmitting exposure light by means of sputtering, said film having a phase of transmitted exposure light converted by 180° and having a transmittance of at least 2% and less than 5%, wherein a phase shifter film consisting of a nitride oxide film of chromium is formed in a mixture gas atmosphere of argon and nitrogen monoxide, using a target of chromium.
Claim 73
Dependent Claim
34 words
The method of manufacturing a blank for a phase shift mask as recited in claim 56, wherein said mixture gas includes 75% to 87% argon and nitrogen monoxide of the remaining percent by volume.
Claim 74
Independent Claim
81 words
A method of manufacturing a blank for a phase shift mask on a main surface of a substrate transmitting exposure light by means of sputtering, said film having a phase of transmitted exposure light converted by 180° and having a transmittance of at least 2% and less than 5%, wherein a phase shifter film consisting of a carbide nitride oxide film of chromium is formed in a mixture gas atmosphere of argon, oxygen, nitrogen and methane, using a target of chromium.
Claim 75
Independent Claim
81 words
A method of manufacturing a blank for a phase shift mask on a main surface of a substrate transmitting exposure light by means of sputtering, said film having a phase of transmitted exposure light converted by 180° and having a transmittance of at least 2% and less than 5%, wherein a phase shifter film consisting of a carbide nitride oxide film of chromium is formed in a mixture gas atmosphere of argon, oxygen, nitrogen and methane, using a target of chromium.
Claim 76
Dependent Claim
41 words
The method of manufacturing a blank for a phase shift mask as recited in claim 58, wherein said mixture gas includes 78% to 79% argon, 12% to 14% oxygen, 8% to 9% methane and nitrogen of the remaining percent by volume.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2000-10-06 | 2001-04-07 | 2001-10-07 | $2000.00 | Window Closed / Lapsed |
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