US4717625A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Photomask material
Assignee: Mitsubishi Electric Corp
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Filing: 1986-03-06
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Granted: 1988-01-05
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Expires: 2006-03-06
Abstract
Abstract A transition metal silicide film 3 is formed on a transparent substrate 1, and an oxidized transition metal silicide film 4 is formed on said transition metal silicide film 3. Dry etching can be easily applied to the transition metal silicide film 3 and the oxidized transition metal silicide film 4. Since the silicified metal films have good adhesion to the transparent substrate 1, the fine patterns can hardly be detached at the time of mask rinsing. In addition, the oxidized transition metal silicide film 4 has a low reflection factor, which prevents the lowering of the resolution.
Inventors
- 👤 Yaichiro Watakabe
- 👤 Shuichi Matsuda
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 21:42
CPC Classifications
G; G03; G03F; G03F1/00; G03F1/54; Y; Y10; Y10S; Y10S148/00; Y10S148/019; Y10S148/147
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
40 words
A photomask material to be used for manufacturing of a semiconductor device, comprising: a transparent substrate, a transition metal silicide film formed on said transparent substrate, and an oxidized transition metal silicide film formed on said transition metal silicide film.
Claim 2
Dependent Claim
40 words
A photomask material to be used for manufacturing of a semiconductor device, comprising: a transparent substrate, a transition metal silicide film formed on said transparent substrate, and an oxidized transition metal silicide film formed on said transition metal silicide film.
Claim 3
Dependent Claim
34 words
A photomask material in accordance with claim 1, wherein the transition metal used in said oxidized transition metal silicide film is the same as the transition metal used in said transition metal silicide film.
Claim 4
Dependent Claim
35 words
A photomask material in accordance with claim 2, wherein the transition metal used in said transition metal silicide film and said oxidized transition metal silicide film is molybdenum (Mo) or tantalum (Ta) or tungsten (W).
Claim 5
Dependent Claim
19 words
A photomask material in accordance with claim 1 wherein said transparent substrate is formed of quartz glass or sapphire.
References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-01-04 | 1991-07-06 | 1992-01-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-01-04 | 1995-07-06 | 1996-01-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-01-04 | 1999-07-06 | 2000-01-05 | $7700.00 | Window Closed / Lapsed |