US5286581A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Phase-shift mask and method for making
Assignee: Motorola Solutions Inc
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Filing: 1991-08-19
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Granted: 1994-02-15
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Expires: 2011-08-19
Abstract
Abstract A method is provided for fabricating a phase-shift mask (10, 30). A mask plate (11, 31) is provided. A semitransparent layer (12, 32) is deposited onto the mask plate (11,31). The semitransparent layer (12, 32) is then patterned into a predetermined geometric pattern. The patterning of the semitransparent layer (12, 32) is then continued into the mask plate (11, 31) for a predetermined distance (38), thus providing a phase-shift mask (10, 30).
Inventors
- 👤 Fourmun Lee
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 09:06
CPC Classifications
G; G03; G03F; G03F1/00; G03F1/26; G03F1/32
Claims Analysis
Total Claims: 18
Claim 1
Independent Claim
144 words
A method for making a phase-shift mask comprising, the steps of: providing a mask plate; depositing a semitransparent layer having a percent transmission from approximately 10 percent to 35 percent on the mask plate; depositing a phase-shift layer on the semitransparent layer; applying a photosensitive layer onto the phase-shift layer; defining the photosensitive layer into geometric patterns, wherein portions of the phase-shift layer are exposed, while other portions of the phase-shift layer are covered by the photosensitive layer; etching the exposed portions of the phase-shift layer, thereby transferring the geometric patterns from the photosensitive layer into the phase-shift layer and exposing portions of the semitransparent layer; and etching the exposed portions of the semitransparent layer, transferring the geometric patterns from the phase-shift layer into the semitransparent layer, thereby producing geometric patterns of both the phase-shift layer and the semitransparent layer with substantially identical dimensions.
Claim 2
Independent Claim
144 words
A method for making a phase-shift mask comprising, the steps of: providing a mask plate; depositing a semitransparent layer having a percent transmission from approximately 10 percent to 35 percent on the mask plate; depositing a phase-shift layer on the semitransparent layer; applying a photosensitive layer onto the phase-shift layer; defining the photosensitive layer into geometric patterns, wherein portions of the phase-shift layer are exposed, while other portions of the phase-shift layer are covered by the photosensitive layer; etching the exposed portions of the phase-shift layer, thereby transferring the geometric patterns from the photosensitive layer into the phase-shift layer and exposing portions of the semitransparent layer; and etching the exposed portions of the semitransparent layer, transferring the geometric patterns from the phase-shift layer into the semitransparent layer, thereby producing geometric patterns of both the phase-shift layer and the semitransparent layer with substantially identical dimensions.
Claim 3
Dependent Claim
37 words
A method for making a phase-shift mask as claimed in claim 1 wherein the depositing of the semitransparent layer having a percent transmission range from approximately 10 percent to 35 percent is accomplished by depositing a metal.
Claim 4
Dependent Claim
46 words
A method for making a phase-shift mask as claimed in claim 2 wherein the depositing of the metal having a percent transmission range from approximately 10 percent to 35 percent is accomplished by depositing the metal with a thickness ranging from 100 angstroms to 2,200 angstroms.
Claim 5
Dependent Claim
35 words
A method for making a phase-shift mask as claimed in claim 3 wherein the depositing of the metal having a percent transmission range from approximately 10 percent to 35 percent is accomplished by depositing chrome.
Claim 6
Dependent Claim
27 words
A method for making a phase-shift mask as claimed in claim 1 wherein the depositing of the phase-shift layer is accomplished by depositing a layer of nitride.
Claim 7
Dependent Claim
30 words
A method for making a phase-shift mask as claimed in claim 5 wherein the depositing of the nitride is deposited with a thickness ranging from 500 angstroms to 5,000 angstroms.
Claim 8
Dependent Claim
28 words
A method for making a phase-shift mask as claimed in claim 4 wherein the depositing of the phase-shift layer is accomplished by depositing a layer of silicon nitride.
Claim 9
Dependent Claim
34 words
A method for making a phase-shift mask as claimed in claim 1 wherein the etching of the exposed portions of the phase-shift layer and the semitransparent layer is accomplished by using an anisotropic etch.
Claim 10
Dependent Claim
32 words
A method for making a phase-shift mask as claimed in claim 1 further comprising the step of removing the photosensitive layer from portions of the phase-shift layer after completion of the etching.
Claim 11
Dependent Claim
36 words
A phase-shift mask comprising: a masking plate; a patterned semitransparent layer having a percent transmission ranging from approximately 10 percent to 35 percent; and a patterned phase-shift layer that is super imposed on the semitransparent layer.
Claim 12
Dependent Claim
36 words
A phase-shift mask comprising: a masking plate; a patterned semitransparent layer having a percent transmission ranging from approximately 10 percent to 35 percent; and a patterned phase-shift layer that is super imposed on the semitransparent layer.
Claim 13
Dependent Claim
22 words
A phase-shift mask as claimed in claim 10 wherein the patterned semitransparent layer and the patterned phase-shift layer are reversed in order.
Claim 14
Dependent Claim
24 words
A phase-shift mask as claimed in claim 10 wherein the patterned semitransparent layer and the patterned phase-shift layer have dimensions that are the same.
Claim 15
Dependent Claim
74 words
A process for making a phase-shift mask comprising, the steps of: providing a mask plate; depositing a semitransparent layer having a percent transmission ranging from approximately 10 percent to 35 percent on the mask plate; depositing a phase-shift layer on the semitransparent layer; patterning both the phase-shift layer and the semitransparent layer to form a stacked geometric pattern that covers portions of the mask plate while other portions of the mask plate are exposed.
Claim 16
Dependent Claim
74 words
A process for making a phase-shift mask comprising, the steps of: providing a mask plate; depositing a semitransparent layer having a percent transmission ranging from approximately 10 percent to 35 percent on the mask plate; depositing a phase-shift layer on the semitransparent layer; patterning both the phase-shift layer and the semitransparent layer to form a stacked geometric pattern that covers portions of the mask plate while other portions of the mask plate are exposed.
Claim 17
Independent Claim
82 words
A method for projecting patterns onto a semiconductor substrate comprising, the steps of: providing an illumination source; providing a phase-shift mask that uses a semitransparent material having a percent transmission range from approximately 10 percent to 35 percent in conjunction with a phase-shift material to provide a pattern that is projected; providing a lens system that receives the pattern that is projected from the phase-shift mask; reducing the pattern in the lens system; and projecting the reduced pattern onto a semiconductor substrate.
Claim 18
Independent Claim
82 words
A method for projecting patterns onto a semiconductor substrate comprising, the steps of: providing an illumination source; providing a phase-shift mask that uses a semitransparent material having a percent transmission range from approximately 10 percent to 35 percent in conjunction with a phase-shift material to provide a pattern that is projected; providing a lens system that receives the pattern that is projected from the phase-shift mask; reducing the pattern in the lens system; and projecting the reduced pattern onto a semiconductor substrate.
References Cited (Backward Citations)
US5045417A
Cited
JPH03144453A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-02-14 | 1997-08-16 | 1998-02-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-02-14 | 2001-08-16 | 2002-02-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-02-14 | 2005-08-16 | 2006-02-15 | $7700.00 | Window Closed / Lapsed |