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Patent US5656338A successfully refreshed from Google Patents.
US5656338A
Expired / Lapsed
US
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Liquid solution of TiBr4 in Br2 used as a precursor for the chemical vapor deposition of titanium or titanium nitride
Assignee: Individual
•
Filing: 1995-06-07
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Granted: 1997-08-12
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Expires: 2015-06-07
Abstract
Abstract Chemical vapor deposition of titanium metal is accomplished by forming a liquid solution of titanium tetrabromide in bromine, vaporizing the solution and contacting the vapor mixture with a plasma in the vicinity of a substrate. These titanium films show good conformality, low electrical resistance and are suitable as contact and adhesion layers in semiconductor microelectronics. By mixing ammonia gas with the mixed vapors of titanium tetrabromide and bromine, films containing titanium nitride are deposited at about 400° C. These titanium nitride films are suitable as diffusion barriers and adhesion layers in semiconductor devices.
Inventors
- 👤 Roy G. Gordon
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:26
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/34; C23C16/06; C23C16/08; C23C16/14
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
66 words
A process for the chemical vapor deposition of titanium or a titanium-containing material on a substrate comprising the steps of: a) forming a liquid solution of titanium tetrabromide dissolved in bromine; b) vaporizing said solution to form a vapor mixture; c) contacting said vapor mixture with a plasma in the vicinity of the substrate; and d) depositing the titanium or the titanium-containing material on said substrate.
Claim 2
Dependent Claim
66 words
A process for the chemical vapor deposition of titanium or a titanium-containing material on a substrate comprising the steps of: a) forming a liquid solution of titanium tetrabromide dissolved in bromine; b) vaporizing said solution to form a vapor mixture; c) contacting said vapor mixture with a plasma in the vicinity of the substrate; and d) depositing the titanium or the titanium-containing material on said substrate.
Claim 3
Dependent Claim
67 words
A process for the chemical vapor deposition of titanium nitride or a titanium nitride-containing material comprising the steps of: a) forming a liquid solution of titanium tetrabromide dissolved in bromine; b) vaporizing said solution to form a vapor mixture; c) mixing said vapor mixture with ammonia vapor in the vicinity of a heated substrate; and d) depositing the titanium nitride or the titanium-nitride-containing material on said substrate.
Claim 4
Dependent Claim
67 words
A process for the chemical vapor deposition of titanium nitride or a titanium nitride-containing material comprising the steps of: a) forming a liquid solution of titanium tetrabromide dissolved in bromine; b) vaporizing said solution to form a vapor mixture; c) mixing said vapor mixture with ammonia vapor in the vicinity of a heated substrate; and d) depositing the titanium nitride or the titanium-nitride-containing material on said substrate.
Claim 5
Dependent Claim
16 words
The process of claims 1 or 2 in which said solution is liquid at room temperature.
Claim 6
Dependent Claim
23 words
The process of claims 1 or 2 in which the titanium tetrabromide content of the solution is not more than 88 weight percent.
Claim 7
Dependent Claim
23 words
The process of claims 1 or 2 in which the titanium tetrabromide content of the solution is not more than 85 weight percent.
Claim 8
Dependent Claim
23 words
The process of claims 1 or 2 in which the titanium tetrabromide content of the solution is not more than 80 weight percent.
Claim 9
Dependent Claim
98 words
A process for the chemical vapor deposition of titanium metal or a titanium-containing material, said process comprising the steps of: a) forming a liquid solution of titanium tetrabromide dissolved in bromine; b) transferring some or all of said liquid solution into a container; c) removing all or most of the bromine out of said container by distillation; d) flowing titanium tetrabromide vapor out of said container into a chamber for chemical vapor deposition; e) contacting said titanium tetrabromide vapor with a plasma; and f) depositing the titanium metal or the titanium-containing material on a substrate in said chamber.
Claim 10
Dependent Claim
98 words
A process for the chemical vapor deposition of titanium metal or a titanium-containing material, said process comprising the steps of: a) forming a liquid solution of titanium tetrabromide dissolved in bromine; b) transferring some or all of said liquid solution into a container; c) removing all or most of the bromine out of said container by distillation; d) flowing titanium tetrabromide vapor out of said container into a chamber for chemical vapor deposition; e) contacting said titanium tetrabromide vapor with a plasma; and f) depositing the titanium metal or the titanium-containing material on a substrate in said chamber.
Claim 11
Dependent Claim
109 words
A process for the chemical vapor deposition of titanium nitride or a titanium nitride-containing material, said process comprising the steps of; a) forming a liquid solution of titanium tetrabromide dissolved in bromine; b) transferring some or all of said liquid solution into a container; c) removing all or most of the bromine out of said container by distillation; d) flowing titanium tetrabromide vapor out of said container into a chamber for chemical vapor deposition; e) mixing said titanium tetrabromide vapor with ammonia vapor in the vicinity of a heated substrate in said chamber; and f) depositing the titanium nitride or the titanium-nitride-containing material on a substrate in said chamber.
Claim 12
Dependent Claim
109 words
A process for the chemical vapor deposition of titanium nitride or a titanium nitride-containing material, said process comprising the steps of; a) forming a liquid solution of titanium tetrabromide dissolved in bromine; b) transferring some or all of said liquid solution into a container; c) removing all or most of the bromine out of said container by distillation; d) flowing titanium tetrabromide vapor out of said container into a chamber for chemical vapor deposition; e) mixing said titanium tetrabromide vapor with ammonia vapor in the vicinity of a heated substrate in said chamber; and f) depositing the titanium nitride or the titanium-nitride-containing material on a substrate in said chamber.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2000-08-11 | 2001-02-10 | 2001-08-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-08-11 | 2005-02-10 | 2005-08-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-08-11 | 2009-02-10 | 2009-08-12 | $7700.00 | Window Closed / Lapsed |