US5646050A
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US
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Increasing stabilized performance of amorphous silicon based devices produced by highly hydrogen diluted lower temperature plasma deposition
Assignee: BP Solar International LLC
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Filing: 1996-02-09
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Granted: 1997-07-08
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Expires: 2016-02-09
Abstract
Abstract High quality, stable photovoltaic and electronic amorphous silicon devices which effectively resist light-induced degradation and current-induced degradation, are produced by a special plasma deposition process. Powerful, efficient single and multi-junction solar cells with high open circuit voltages and fill factors and with wider bandgaps, can be economically fabricated by the special plasma deposition process. The preferred process includes relatively low temperature, high pressure, glow discharge of silane in the presence of a high concentration of hydrogen gas.
Inventors
- 👤 Yaun-Min Li
- 👤 Murray S. Bennett
- 👤 Liyou Yang
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 19:51
CPC Classifications
H; H10; H10F; H10F10/00; H10F10/10; H10F10/17; H10F10/172; H10F71/00; H10F71/10; H10F71/103; H10F71/1035; H10F77/00; H10F77/10; H10F77/16; H10F77/162; H10F77/166; H10F77/1662; H10F77/1668; Y; Y02; Y02B; Y02B10/00; Y02B10/10; Y02E; Y02E10/00; Y02E10/50; Y02E10/548; Y02P; Y02P70/00; Y02P70/50
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
159 words
A process comprising the steps of: fabricating semiconductor devices comprising a layer of amorphous silicon supported on a substrate, by plasma enhanced chemical vapor deposition of said amorphous silicon layer under the following conditions: a substrate temperature ranging from 80° C. to 220° C.; a pressure ranging from 2 to 50 Torr; a plasma discharge power density ranging from 20 to 150 mW/cm 2 ; a feedstock gas highly diluted with a diluent gas selected from the group consisting of hydrogen, deuterium, and combinations thereof; said feedstock gas comprising at least one member of the group consisting of: silane, disilane, tetramethyl silane, SiF 4 , SiHF 3 , SiH 2 Cl 4 , and other gases having the general formula Si N H 2N+2-M Y M wherein; Si=silicon H=hydrogen or deuterium Y=a halogen N=positive integer ≧1 M=positive integer; and 2N+2-M≧0; and the dilution ratio of said diluent gas to said feedstock gas ranging from about 20:1 to about 400:1.
Claim 2
Dependent Claim
159 words
A process comprising the steps of: fabricating semiconductor devices comprising a layer of amorphous silicon supported on a substrate, by plasma enhanced chemical vapor deposition of said amorphous silicon layer under the following conditions: a substrate temperature ranging from 80° C. to 220° C.; a pressure ranging from 2 to 50 Torr; a plasma discharge power density ranging from 20 to 150 mW/cm 2 ; a feedstock gas highly diluted with a diluent gas selected from the group consisting of hydrogen, deuterium, and combinations thereof; said feedstock gas comprising at least one member of the group consisting of: silane, disilane, tetramethyl silane, SiF 4 , SiHF 3 , SiH 2 Cl 4 , and other gases having the general formula Si N H 2N+2-M Y M wherein; Si=silicon H=hydrogen or deuterium Y=a halogen N=positive integer ≧1 M=positive integer; and 2N+2-M≧0; and the dilution ratio of said diluent gas to said feedstock gas ranging from about 20:1 to about 400:1.
Claim 3
Dependent Claim
61 words
A process in accordance with claim 1 wherein: said plasma enhanced chemical vapor deposition comprises radio frequency glow discharge, said pressure ranges from about 6 Torr to about 12 Torr, said substrate temperature ranges from 120° C. to 150° C., said discharge power density ranges from 40 to 80 mW/cm 2 ; and said dilution ratio ranges from 40:1 to 200:1.
Claim 4
Dependent Claim
61 words
A process in accordance with claim 1 wherein: said devices comprise single-junction solar cells having an I-layer comprising said amorphous silicon layer, having a fill factor greater than 0.64 and an open circuit voltage greater than 0.9V; said diluent gas comprises hydrogen; said feedstock gas comprises silane; and said substrate is selected from the group consisting of glass and stainless steel.
Claim 5
Dependent Claim
33 words
A process in accordance with claim 3 wherein: said substrate comprises glass; and said single junction solar devices have a fill factor greater than 0.7 and an open circuit voltage greater than 1.0V.
Claim 6
Dependent Claim
161 words
A process comprising the steps of: fabricating semiconductor devices comprising a layer of amorphous silicon supported on, a substrate, by plasma enhanced chemical vapor deposition of said amorphous silicon layer under the following conditions: a substrate temperature ranging from 20° C. to 300° C.; a plasma discharge current density ranging from 0.01 to 5 A/cm 2 ; a feedstock gas highly diluted with a diluent gas selected from the group consisting of hydrogen, deuterium, and combinations thereof; said feedstock gas comprising at least one member of the group consisting of: silane, disilane, tetramethyl silane, SiF 4 , SiHF 3 , SiH 2 Cl 4 , and other gases having the general formula Si N H 2N+2-M Y M wherein; Si=silicon H=hydrogen or deuterium Y=a halogen N=positive integer ≧1 M=positive integer; and 2N+2-M≧0 the dilution ratio of said diluent gas to said feedstock gas ranging from about 5:1 to about 200:1; and a pressure greater than 1.0 Torr to about 10 Torr.
Claim 7
Dependent Claim
161 words
A process comprising the steps of: fabricating semiconductor devices comprising a layer of amorphous silicon supported on, a substrate, by plasma enhanced chemical vapor deposition of said amorphous silicon layer under the following conditions: a substrate temperature ranging from 20° C. to 300° C.; a plasma discharge current density ranging from 0.01 to 5 A/cm 2 ; a feedstock gas highly diluted with a diluent gas selected from the group consisting of hydrogen, deuterium, and combinations thereof; said feedstock gas comprising at least one member of the group consisting of: silane, disilane, tetramethyl silane, SiF 4 , SiHF 3 , SiH 2 Cl 4 , and other gases having the general formula Si N H 2N+2-M Y M wherein; Si=silicon H=hydrogen or deuterium Y=a halogen N=positive integer ≧1 M=positive integer; and 2N+2-M≧0 the dilution ratio of said diluent gas to said feedstock gas ranging from about 5:1 to about 200:1; and a pressure greater than 1.0 Torr to about 10 Torr.
Claim 8
Dependent Claim
59 words
A process in accordance with claim 5 wherein: said devices comprise single-junction solar cells having an I-layer comprising said amorphous silicon, a fill factor greater than 0.64, and an open circuit voltage greater than 0.9; said diluent gas comprises hydrogen; said feedstock gas comprises silane; and said substrate is selected from the group consisting of glass and stainless steel.
Claim 9
Dependent Claim
66 words
A process in accordance with claim 6 wherein: said plasma enhanced chemical deposition occurs by DC glow discharge at a substrate temperature ranging from about 80°-210° C.; a pressure greater than about 5 Torr to about 10 Torr; a dilution ratio ranging from about 10:1 to about 50:1; a current density ranging from about 0.03 to about 0.5 A/cm 2 ; and said substrate comprises glass.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2000-07-07 | 2001-01-06 | 2001-07-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-07-07 | 2005-01-06 | 2005-07-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-07-07 | 2009-01-06 | 2009-07-08 | $7700.00 | Window Closed / Lapsed |