US5230753A
Expired / Lapsed
US
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Photostable amorphous silicon-germanium alloys
Assignee: Princeton University
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Filing: 1991-12-03
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Granted: 1993-07-27
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Expires: 2011-12-03
Abstract
Abstract Alloys of hydrogenated amorphous silicon and germanium are disclosed that exhibit unexpectedly low saturated defect densities, particularly relative to the initial defect densities of the alloys, so as to render them substantially resistant to Staebler-Wronski degradation. The alloys are producible using conventional equipment, but glow-discharge methods are preferred. The preferred amount of germanium in the alloy is about 15 at. % to about 50 at. %. The alloys are particularly useful for making photovoltaic cells. The alloys can be used as intrinsic semiconductors and doped for use as "n" or "p" materials. Methods for making the alloys are also disclosed.
Inventors
- 👤 Sigurd Wagner
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 09:53
CPC Classifications
H; H10; H10F; H10F77/00; H10F77/10; H10F77/16; H10F77/162; H10F77/166; H10F77/1662; H10F77/1668; H10F71/00; H10F71/10; H10F71/103; H10F71/1035; H10F77/1665; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/548; Y02P; Y02P70/00; Y02P70/50
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
52 words
A solid-state alloy suitable for use in photovoltaic cells, comprising hydrogenated amorphous silicon and germanium, wherein the germanium is present in the alloy at a concentration of greater than zero to about 50 at. %, the alloy exhibiting initial and saturated defect-density values of no greater than 10 17 /cm 3 .
Claim 2
Dependent Claim
52 words
A solid-state alloy suitable for use in photovoltaic cells, comprising hydrogenated amorphous silicon and germanium, wherein the germanium is present in the alloy at a concentration of greater than zero to about 50 at. %, the alloy exhibiting initial and saturated defect-density values of no greater than 10 17 /cm 3 .
Claim 3
Dependent Claim
21 words
An alloy as recited in claim 1 having an initial defect density of no greater than 5×10 16 /cm 3 .
Claim 4
Dependent Claim
11 words
An alloy as recited in claim 1 on a solid-state substrate.
Claim 5
Dependent Claim
57 words
A solid-state alloy, comprising hydrogenated amorphous silicon and germanium, wherein the germanium is present in the alloy at a concentration within a range of greater than zero to about 50 at. %, the alloy exhibiting an E Tauc value of 1.62 eV or less and a saturated defect density of less than 10 17 cm -3 .
Claim 6
Dependent Claim
57 words
A solid-state alloy, comprising hydrogenated amorphous silicon and germanium, wherein the germanium is present in the alloy at a concentration within a range of greater than zero to about 50 at. %, the alloy exhibiting an E Tauc value of 1.62 eV or less and a saturated defect density of less than 10 17 cm -3 .
Claim 7
Dependent Claim
25 words
An alloy as recited in claim 4 comprising hydrogen at a concentration within a range of about 1 at. % to about 20 at. %.
Claim 8
Dependent Claim
25 words
An alloy as recited in claim 5 comprising germanium at a concentration within a range of about 10 at. % to about 30 at. %.
Claim 9
Dependent Claim
20 words
An alloy as recited in claim 6 having an initial defect density of less than 2×10 16 cm -3 .
Claim 10
Dependent Claim
21 words
An alloy as recited in claim 4 having an initial defect density of no greater than 5×10 16 /cm 3 .
Claim 11
Dependent Claim
84 words
A solid-state alloy for use in photovoltaic cells, comprising amorphous silicon, germanium at a concentration in the alloy of about 10 at. % to about 30 at. %, and hydrogen at a concentration in the alloy of about 1 at. % to about 20 at. %, the alloy exhibiting an E Tauc value of 1.62 eV or less, a saturated defect density of less than 10 17 cm -3 , and an initial defect density of no greater than 5×10 16 /cm 3 .
Claim 12
Dependent Claim
84 words
A solid-state alloy for use in photovoltaic cells, comprising amorphous silicon, germanium at a concentration in the alloy of about 10 at. % to about 30 at. %, and hydrogen at a concentration in the alloy of about 1 at. % to about 20 at. %, the alloy exhibiting an E Tauc value of 1.62 eV or less, a saturated defect density of less than 10 17 cm -3 , and an initial defect density of no greater than 5×10 16 /cm 3 .
Claim 13
Dependent Claim
18 words
An alloy as recited in claim 9 having a germanium concentration of greater than about 13 at. %.
Claim 14
Dependent Claim
20 words
An alloy as recited in claim 10 having an initial defect density of less than 2×10 16 cm -3 .
Claim 15
Dependent Claim
13 words
A photovoltaic cell having a layer comprised of the alloy of claim 1.
Claim 16
Dependent Claim
13 words
A photovoltaic cell having a layer comprised of the alloy of claim 4.
Claim 17
Dependent Claim
13 words
A photovoltaic cell having a layer comprised of the alloy of claim 9.
References Cited (Backward Citations)
US4492810A
Cited
US4839240A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-07-26 | 1997-01-25 | 1997-07-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-07-26 | 2001-01-25 | 2001-07-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-07-26 | 2005-01-25 | 2005-07-27 | $7700.00 | Window Closed / Lapsed |