US5358755A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Amorphous hydrogenated silicon-carbon alloys and solar cells and other semiconductor devices produced therefrom
Assignee: BP Corp North America Inc
•
Filing: 1993-08-13
•
Granted: 1994-10-25
•
Expires: 2013-08-13
Abstract
Abstract Amorphous hydrogenated silicon-carbon alloys having particular usefulness in the preparation of photovoltaic devices, such as solar cells, with improved properties, such as high open circuit voltage with high fill factor and improved blue response, and stability, are provided by the process of depositing the alloy on a substrate maintained at a relatively low temperature below about 260° C. in a vapor deposition chamber, and introducing a gaseous mixture comprising at least one compound having the formula (SiX 3 ) 3 CX 1 wherein each X and X 1 is selected from the group consisting of hydrogen and halogen, and a high proportion of hydrogen, in a ratio by volume of from about 50 parts to about 2000 parts hydrogen to 1 part of (SiX 3 ) 3 CX 1 compound, under deposition conditions of low excitation power density of less than about 50 mw/cm 2 , and high pressure of more than about 0.1 torr.
Inventors
- 👤 Yuan-Min Li
- 👤 Benjamin F. Fieselmann
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 21:17
CPC Classifications
H; H10; H10F; H10F10/00; H10F10/10; H10F10/17; C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/32; C23C16/325; H10F71/00; H10F71/10; H10F71/103; H10F71/1035; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/548; Y02P; Y02P70/00; Y02P70/50
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
152 words
A process for preparing an amorphous hydrogenated silicon-carbon alloy, comprising: a) preparing a vapor deposition chamber; b) placing a substrate in the chamber and maintaining the substrate at a temperature below about 260° C.; and c) subjecting the substrate to a vapor deposition step by introducing into the deposition chamber a gaseous mixture comprising (1) at least one compound having the formula: (SiX.sub.3).sub.3 CX.sup.1 wherein each X and X 1 is selected from the group consisting of hydrogen and halogen, and (2) hydrogen, in a ratio by volume of from about 50 parts to about 2000 parts hydrogen to 1 part (SiX 3 ) 3 CX 1 compound; d) under deposition conditions of excitation power density of less than about 50 mW/cm 2 at a surface of the substrate, and a pressure of more than about 0.1 torr whereby one or more hydrogenated amorphous silicon-carbon alloy regions are deposited onto the substrate.
Claim 2
Dependent Claim
152 words
A process for preparing an amorphous hydrogenated silicon-carbon alloy, comprising: a) preparing a vapor deposition chamber; b) placing a substrate in the chamber and maintaining the substrate at a temperature below about 260° C.; and c) subjecting the substrate to a vapor deposition step by introducing into the deposition chamber a gaseous mixture comprising (1) at least one compound having the formula: (SiX.sub.3).sub.3 CX.sup.1 wherein each X and X 1 is selected from the group consisting of hydrogen and halogen, and (2) hydrogen, in a ratio by volume of from about 50 parts to about 2000 parts hydrogen to 1 part (SiX 3 ) 3 CX 1 compound; d) under deposition conditions of excitation power density of less than about 50 mW/cm 2 at a surface of the substrate, and a pressure of more than about 0.1 torr whereby one or more hydrogenated amorphous silicon-carbon alloy regions are deposited onto the substrate.
Claim 3
Dependent Claim
42 words
The process of claim 1, wherein the gaseous mixture introduced into the deposition chamber further comprises silane in a ratio by volume of from about 10 parts to about 200 parts silane to 1 part (SiX 3 ) 3 CX 1 compound.
Claim 4
Dependent Claim
10 words
The process of claim 1, wherein X 1 is hydrogen.
Claim 5
Dependent Claim
42 words
The process of claim 3, wherein the gaseous mixture introduced into the deposition chamber further comprises silane in a ratio by volume of from about 10 parts to about 200 parts silane to 1 part (SiX 3 ) 3 CX 1 compound.
Claim 6
Dependent Claim
16 words
The process of claim 1 wherein the vapor deposition step is performed by chemical vapor deposition.
Claim 7
Dependent Claim
15 words
The process of claim 5, wherein the vapor deposition step is performed by glow discharge.
Claim 8
Dependent Claim
25 words
The process of claim 6 wherein the glow discharge is a.c. glow discharge performed at a frequency of between approximately 10 and approximately 200 megahertz.
Claim 9
Dependent Claim
16 words
The process of claim 4, wherein the vapor deposition step is performed by chemical vapor deposition.
Claim 10
Dependent Claim
145 words
A process for preparing a semiconductor device comprising: a) preparing a vapor deposition chamber; b) placing a substrate in the chamber and maintaining the substrate at a temperature above ambient temperature and below about 260° C., and; c) introducing into the deposition chamber a gaseous mixture comprising (1) at least one compound having the formula: (SiX.sub.3).sub.3 CX.sup.1 wherein each X and X 1 is selected from the group consisting of hydrogen and halogen, and (2) hydrogen, in a ratio by volume of from about 50 parts to about 2000 parts hydrogen to 1 part (SiX 3 ) 3 CX 1 compound, d) under deposition conditions of excitation power density of less than about 50 mW/cm 2 at a surface of the substrate, and a pressure of more than about 0.1 torr whereby one or more hydrogenated amorphous silicon-carbon alloy regions are deposited onto the substrate.
Claim 11
Dependent Claim
145 words
A process for preparing a semiconductor device comprising: a) preparing a vapor deposition chamber; b) placing a substrate in the chamber and maintaining the substrate at a temperature above ambient temperature and below about 260° C., and; c) introducing into the deposition chamber a gaseous mixture comprising (1) at least one compound having the formula: (SiX.sub.3).sub.3 CX.sup.1 wherein each X and X 1 is selected from the group consisting of hydrogen and halogen, and (2) hydrogen, in a ratio by volume of from about 50 parts to about 2000 parts hydrogen to 1 part (SiX 3 ) 3 CX 1 compound, d) under deposition conditions of excitation power density of less than about 50 mW/cm 2 at a surface of the substrate, and a pressure of more than about 0.1 torr whereby one or more hydrogenated amorphous silicon-carbon alloy regions are deposited onto the substrate.
Claim 12
Dependent Claim
42 words
The process of claim 9 wherein the gaseous mixture introduced into the deposition chamber further comprises silane in a ratio by volume of from about 10 parts to about 200 parts silane to 1 part (SiX 3 ) 3 CX 1 compound.
Claim 13
Dependent Claim
10 words
The process of claim 9, wherein X 1 is hydrogen.
Claim 14
Dependent Claim
160 words
A process for preparing a photovoltaic device comprising: a) preparing a vapor deposition chamber; b) placing a substrate in the chamber and maintaining the substrate at a temperature above ambient temperature and below about 260° C., and; c) introducing into the deposition chamber a gaseous mixture comprising (1) at least one compound having the formula: (SiX.sub.3).sub.3 CX.sup.1 wherein each X and X 1 is selected from the group consisting of hydrogen and halogen, and (2) hydrogen, in a ratio by volume of from about 50 parts to about 2000 parts hydrogen to 1 part (SiX 3 ) 3 CX 1 compound, d) under deposition conditions of excitation power density of less than about 50 mW/cm 2 at a surface of the substrate, and a pressure of more than about 0.1 torr whereby one or more hydrogenated amorphous silicon-carbon alloy regions are deposited onto the substrate; and front and back contacts are applied to the substrate thereby forming the photovoltaic device.
Claim 15
Dependent Claim
160 words
A process for preparing a photovoltaic device comprising: a) preparing a vapor deposition chamber; b) placing a substrate in the chamber and maintaining the substrate at a temperature above ambient temperature and below about 260° C., and; c) introducing into the deposition chamber a gaseous mixture comprising (1) at least one compound having the formula: (SiX.sub.3).sub.3 CX.sup.1 wherein each X and X 1 is selected from the group consisting of hydrogen and halogen, and (2) hydrogen, in a ratio by volume of from about 50 parts to about 2000 parts hydrogen to 1 part (SiX 3 ) 3 CX 1 compound, d) under deposition conditions of excitation power density of less than about 50 mW/cm 2 at a surface of the substrate, and a pressure of more than about 0.1 torr whereby one or more hydrogenated amorphous silicon-carbon alloy regions are deposited onto the substrate; and front and back contacts are applied to the substrate thereby forming the photovoltaic device.
Claim 16
Dependent Claim
42 words
The process of claim 12, wherein the gaseous mixture introduced into the deposition chamber further comprises silane in a ratio by volume of from about 10 parts to about 200 parts silane to 1 part (SiX 3 ) 3 CX 1 compound.
Claim 17
Dependent Claim
10 words
The process of claim 12, wherein X 1 is hydrogen.
References Cited (Backward Citations)
US4532150A
Cited
US4683145A
Cited
JPS6191360A
Cited
US4801468A
Cited
US4690830A
Cited
US4910153A
Cited
US4923716A
Cited
US5061322A
Cited
US5011706A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-10-24 | 1998-04-25 | 1998-10-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-10-24 | 2002-04-25 | 2002-10-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-10-24 | 2006-04-25 | 2006-10-25 | $7700.00 | Window Closed / Lapsed |