Method of producing p-type amorphous silicon carbide and solar cell including same

Claim 3

A method according to claim 1, wherein said boron fluoride compound provides a boron fluoride series radical B m-x F n-y (m, n, x, and y being natural numbers, and x<m and y<n) produced by glow discharge decomposition of a boron fluoride compound having a formula of B m F n .

Claim 4

A method according to claim 2, wherein said boron fluoride compound is boron trifluoride.

Claim 5

A method according to claim 2, wherein said boron fluoride compound is diboron tetrafluoride.

Claim 6

A method according to claim 3, wherein a portion of the fluoride in said boron fluoride compound is substituted with hydrogen or an organic radical.

Claim 7

A method according to claim 5, wherein said organic radical is a methyl radical, an ethyl radical, or a vinyl radical.

Claim 8

A method according to claim 1, wherein said silicon compound is di-silane, silane tetrafluoride, or mono-silane.

Claim 9

A method according to claim 1, wherein said hydrocarbon is methane, ethane, or acetylene.

Claim 10

A method according to claim 1, wherein the dilution ratio of said silicon compound with said hydrogen is greater than 100.

Claim 11

A pin-type amorphous silicon solar battery comprising: a glass substrate; a tin oxide layer formed on said glass substrate; a boron-doped p-type hydrogenated amorphous silicon carbide thin film formed on said tin oxide layer, wherein said boron-doped p-type hydrogenated amorphous silicon carbide thin film is produced by a method comprising the steps of preparing a raw material gas mixture consisting of a silicon compound, a hydrocarbon, and a boron fluoride compound, diluting said raw material gas mixture with hydrogen gas such that the ratio of said hydrogen gas to said silicon compound is at least 100:l, and decomposing said raw material gas mixture by glow discharge to achieve a resultant amorphous silicon carbide thin film having a prescribed value of photoconductivity; an i-type amorphous silicon hydride layer formed on said boron-doped p-type hydrogenated amorphous silicon carbide thin film; an n-type amorphous silicon hydride layer formed on said i-type amorphous silicon hydride layer; and an aluminum electrode formed on said n-type amorphous silicon hydride layer.

Claim 12

A pin-type amorphous silicon solar battery comprising: a glass substrate; a tin oxide layer formed on said glass substrate; a boron-doped p-type hydrogenated amorphous silicon carbide thin film formed on said tin oxide layer, wherein said boron-doped p-type hydrogenated amorphous silicon carbide thin film is produced by a method comprising the steps of preparing a raw material gas mixture consisting of a silicon compound, a hydrocarbon, and a boron fluoride compound, diluting said raw material gas mixture with hydrogen gas such that the ratio of said hydrogen gas to said silicon compound is at least 100:l, and decomposing said raw material gas mixture by glow discharge to achieve a resultant amorphous silicon carbide thin film having a prescribed value of photoconductivity; an i-type amorphous silicon hydride layer formed on said boron-doped p-type hydrogenated amorphous silicon carbide thin film; an n-type amorphous silicon hydride layer formed on said i-type amorphous silicon hydride layer; and an aluminum electrode formed on said n-type amorphous silicon hydride layer.