US4690830A
Expired / Lapsed
US
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Activation by dehydrogenation or dehalogenation of deposition feedstock and dopant materials useful in the fabrication of hydrogenated amorphous silicon alloys for photovoltaic devices and other semiconductor devices
Assignee: BP Solar International LLC
•
Filing: 1986-02-18
•
Granted: 1987-09-01
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Expires: 2006-02-18
Abstract
Abstract Compounds having the formula (MX3)n M'X4-n wherein M and M' are different Group 4A atoms, at least one of M and M' is silicon, X is hydrogen, halogen or mixtures thereof, and n is an integer between 1 and 4, inclusive, can be activated by dehydrogenation or dehalogenation. These compounds are useful as deposition feedstock materials in the formation of hydrogenated amorphous silicon alloys useful in the fabrication of photovoltaic and other electronically active devices. Dopants having the formula (SiX3)m L X3-m wherein L is a Group 5A atom selected from the group of phosphorus, arsenic, antimony and bismuth, X is hydrogen, halogen or mixtures thereof and m is an integer between 1 and 3, inclusive, can be activated by dehydrogenation or dehalogenation. These compounds are useful in the fabrication of negatively-doped hydrogenated amorphous silicon alloys useful in the fabrication of photovoltaic and other electronically active devices. Dopants having the formula YJX2 wherein Y is halogen or carbonyl, J is a Group 3A atom and X is hydrogen, halogen or mixtures thereof, can be activated by dehydrogenation or dehalogenation. These compounds are useful in the formation of positively-doped hydrogenated amorphous silicon alloys useful in the fabrication of photovoltaic and other electronically active devices.
Inventors
- 👤 Charles R. Dickson
- 👤 David E. Carlson
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 04:21
CPC Classifications
H; H10; H10F; H10F10/00; H10F10/10; H10F10/17; H10D; H10D62/00; H10D62/40; H10D62/402; H10D62/80; H10D62/83; H10D62/832; H10D62/834; H10F71/00; H10F71/10; H10F71/103; H10F71/1035; H10P; H10P14/00; H10P14/20; H10P14/24; H10P14/32; H10P14/3202; H10P14/3204; H10P14/3211; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/3438; H10P14/3441; H10P14/3442; H10P14/3444; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/548; Y02P; Y02P70/00; Y02P70/50
Claims Analysis
Total Claims: 84
Claim 1
Independent Claim
107 words
A process for preparing hydrogenated amorphous silicon alloy by deposition of hydrogenated amorphous silicon alloy film onto a substrate in a deposition chamber comprising the steps of (a) introducing into the deposition chamber during deposition a deposition gas mixture which includes one or more compounds having the formula: (MX.sub.3).sub.n M' X.sub.4-n wherein M and M' are different Group 4A atoms selected from the group of silicon, germanium, tin and lead, at least one of M and M' is silicon, X is hydrogen, halogen or mixtures thereof, and n is an integer between 1 and 4, inclusive; and (b) activating said deposition gas mixture by dehydrogenation or dehalogenation.
Claim 2
Dependent Claim
107 words
A process for preparing hydrogenated amorphous silicon alloy by deposition of hydrogenated amorphous silicon alloy film onto a substrate in a deposition chamber comprising the steps of (a) introducing into the deposition chamber during deposition a deposition gas mixture which includes one or more compounds having the formula: (MX.sub.3).sub.n M' X.sub.4-n wherein M and M' are different Group 4A atoms selected from the group of silicon, germanium, tin and lead, at least one of M and M' is silicon, X is hydrogen, halogen or mixtures thereof, and n is an integer between 1 and 4, inclusive; and (b) activating said deposition gas mixture by dehydrogenation or dehalogenation.
Claim 3
Dependent Claim
15 words
The process of claim 1 wherein said activation step is accomplished by photochemical vapor deposition.
Claim 4
Dependent Claim
12 words
The process of claim 2 wherein said photochemical vapor deposition is mercury-sensitized.
Claim 5
Dependent Claim
20 words
The process of claim 1 wherein said activation step is accomplished by reacting said deposition gas mixture with atomic hydrogen.
Claim 6
Dependent Claim
22 words
The process of claim 1 wherein said activation step is accomplished by the catalytic dehydrogenation or dehalogenation of said deposition gas mixture.
Claim 7
Dependent Claim
23 words
The process of claim 1 wherein said activation step is accomplished by dehydrogenating said deposition gas mixture with molecular fluorine or atomic fluorine.
Claim 8
Dependent Claim
20 words
The process of claim 1 wherein said activation step is accomplished by injecting energetic electrons into said deposition gas mixture.
Claim 9
Dependent Claim
20 words
The process of claim 1 wherein M is silicon, M' is germanium, and X is hydrogen, fluorine or mixtures thereof.
Claim 10
Dependent Claim
13 words
The process of claim 1 wherein said deposition gas mixture also includes silane.
Claim 11
Dependent Claim
110 words
A process for manufacturing a semiconductor device comprising the step of depositing on a substrate one or more hydrogenated amorphous silicon alloy regions, at least one of said regions being made by (a) introducing into a deposition chamber during deposition gas mixture which includes one or more compounds having the formula: (MX.sub.3).sub.n M' X.sub.4-n wherein M and M' are different Group 4A atoms selected from the group of silicon, germanium, tin and lead, at least one of M and M' is silicon, X is hydrogen, halogen or mixtures thereof, and n is an integer between 1 and 4, inclusive; and (b) activating said deposition gas mixture by dehydrogenation or dehalogenation.
Claim 12
Dependent Claim
110 words
A process for manufacturing a semiconductor device comprising the step of depositing on a substrate one or more hydrogenated amorphous silicon alloy regions, at least one of said regions being made by (a) introducing into a deposition chamber during deposition gas mixture which includes one or more compounds having the formula: (MX.sub.3).sub.n M' X.sub.4-n wherein M and M' are different Group 4A atoms selected from the group of silicon, germanium, tin and lead, at least one of M and M' is silicon, X is hydrogen, halogen or mixtures thereof, and n is an integer between 1 and 4, inclusive; and (b) activating said deposition gas mixture by dehydrogenation or dehalogenation.
Claim 13
Dependent Claim
13 words
The process of claim 10 wherein said semiconductor device is a photovolatic device.
Claim 14
Dependent Claim
80 words
A process for manufacturing a semiconductor device comprising depositing on a substrate by photochemical vapor deposition one or more hydrogenated amorphous silicon alloy regions from one or more compounds having the formula: (MX.sub.3).sub.n M' X.sub.4-n wherein M and M' are different Group 4A atoms selected from the group of silicon, germanium, tin and lead, at least one of M and M' is silicon, X is hydrogen, halogen or mixtures thereof, and n is an integer between 1 and 4, inclusive.
Claim 15
Dependent Claim
80 words
A process for manufacturing a semiconductor device comprising depositing on a substrate by photochemical vapor deposition one or more hydrogenated amorphous silicon alloy regions from one or more compounds having the formula: (MX.sub.3).sub.n M' X.sub.4-n wherein M and M' are different Group 4A atoms selected from the group of silicon, germanium, tin and lead, at least one of M and M' is silicon, X is hydrogen, halogen or mixtures thereof, and n is an integer between 1 and 4, inclusive.
Claim 16
Dependent Claim
13 words
The process of claim 12 wherein said semiconductor device is a photovoltaic device.
Claim 17
Dependent Claim
126 words
A process for manufacturing a photovoltaic device comprising depositing one or more hydrogenated amorphous silicon alloy regions between a front contact and a back contact, wherein at least one of the regions is a hydrogenated amorphous silicon alloy made by deposition in a deposition chamber by (a) introducing into the deposition chamber during deposition a deposition gas mixture which includes one or more compounds having the formula: (MX.sub.3).sub.n M' X.sub.4-n wherein M and M' are different Group 4A atoms selected from the group of silicon, germanium, tin and lead, at least one of M and M' is silicon, X is hydrogen, halogen or mixtures thereof, and n is an integer between 1 and 4, inclusive; and (b) activating said deposition gas mixture by dehydrogenation or dehalogenation.
Claim 18
Dependent Claim
126 words
A process for manufacturing a photovoltaic device comprising depositing one or more hydrogenated amorphous silicon alloy regions between a front contact and a back contact, wherein at least one of the regions is a hydrogenated amorphous silicon alloy made by deposition in a deposition chamber by (a) introducing into the deposition chamber during deposition a deposition gas mixture which includes one or more compounds having the formula: (MX.sub.3).sub.n M' X.sub.4-n wherein M and M' are different Group 4A atoms selected from the group of silicon, germanium, tin and lead, at least one of M and M' is silicon, X is hydrogen, halogen or mixtures thereof, and n is an integer between 1 and 4, inclusive; and (b) activating said deposition gas mixture by dehydrogenation or dehalogenation.
Claim 19
Dependent Claim
130 words
A process for manufacturing a photovoltaic device comprising one or more hydrogenated amorphous silicon alloy regions between a front contact and back contact wherein at least one of the regions is a hydrogenated amorphous silicon alloy made by (a) providing a deposition gas mixture which includes one or more compounds having the formula: (MX.sub.3).sub.n M' X.sub.4-n wherein M and M' are different Group 4A atoms selected from the group of silicon, germanium, tin and lead, at least one of M and M' is silicon, X is hydrogen, halogen or mixtures thereof, and n is an integer between 1 and 4, inclusive; and (b) mixing said deposition gas mixture with mercury vapor; (c) introducing the resulting mixture into a deposition chamber; and (d) irradiating said resulting mixture with a mercury lamp.
Claim 20
Dependent Claim
130 words
A process for manufacturing a photovoltaic device comprising one or more hydrogenated amorphous silicon alloy regions between a front contact and back contact wherein at least one of the regions is a hydrogenated amorphous silicon alloy made by (a) providing a deposition gas mixture which includes one or more compounds having the formula: (MX.sub.3).sub.n M' X.sub.4-n wherein M and M' are different Group 4A atoms selected from the group of silicon, germanium, tin and lead, at least one of M and M' is silicon, X is hydrogen, halogen or mixtures thereof, and n is an integer between 1 and 4, inclusive; and (b) mixing said deposition gas mixture with mercury vapor; (c) introducing the resulting mixture into a deposition chamber; and (d) irradiating said resulting mixture with a mercury lamp.
Claim 21
Dependent Claim
100 words
A process for preparing a negatively-doped hydrogenated amorphous silicon alloy by deposition of a negatively-doped hydrogenated amorphous silicon alloy film onto a substrate in a deposition chamber comprising the steps of (a) introducing into the deposition chamber during deposition a deposition gas mixture which includes one or more dopants having the formula: (SiX.sub.3).sub.m L X.sub.3-m wherein L is a Group 5A atom selected from the group of phosphorus, arsenic, antimony and bismuth, X is hydrogen, halogen or mixtures thereof, and m is an integer between 1 and 3, inclusive, and (b) activating said deposition gas mixture by dehydrogenation or dehalogenation.
Claim 22
Dependent Claim
100 words
A process for preparing a negatively-doped hydrogenated amorphous silicon alloy by deposition of a negatively-doped hydrogenated amorphous silicon alloy film onto a substrate in a deposition chamber comprising the steps of (a) introducing into the deposition chamber during deposition a deposition gas mixture which includes one or more dopants having the formula: (SiX.sub.3).sub.m L X.sub.3-m wherein L is a Group 5A atom selected from the group of phosphorus, arsenic, antimony and bismuth, X is hydrogen, halogen or mixtures thereof, and m is an integer between 1 and 3, inclusive, and (b) activating said deposition gas mixture by dehydrogenation or dehalogenation.
Claim 23
Dependent Claim
15 words
The process of claim 16 wherein said activation step is accomplished by photochemical vapor deposition.
Claim 24
Dependent Claim
12 words
The process of claim 17 wherein said photochemical vapor deposition is mercury-sensitized.
Claim 25
Dependent Claim
20 words
The process of claim 16 wherein said activation step is accomplished by reacting said deposition gas mixture with atomic hydrogen.
Claim 26
Dependent Claim
22 words
The process of claim 16 wherein said activation step is accomplished by the catalytic dehydrogenation or dehalogenation of said deposition gas mixture.
Claim 27
Dependent Claim
23 words
The process of claim 16 wherein said activation step is accomplished by dehydrogenating said deposition gas mixture with molecular fluorine or atomic fluorine.
Claim 28
Dependent Claim
20 words
The process of claim 16 wherein said activation step is accomplished by injecting energetic electrons into said deposition gas mixture.
Claim 29
Dependent Claim
19 words
The process of claim 16 wherein Y is phosphorus or arsenic and X is hydrogen, fluorine or mixtures thereof.
Claim 30
Dependent Claim
13 words
The process of claim 16 wherein said deposition gas mixture also includes silane.
Claim 31
Dependent Claim
102 words
A process for manufacturing a semiconductor device comprising the step of depositing on a substrate one or more negatively-doped hydrogenated amorphous silicon alloy regions, at least one of said regions being made by (a) introducing into a deposition chamber during deposition a deposition gas mixture which includes one or more dopants having the formula: (SiX.sub.3).sub.m L X.sub.3-m wherein L is a Group 5A atom selected from the group of phosphorus, arsenic, antimony and bismuth, X is hydrogen, halogen or mixtures thereof, and m is an integer between 1 and 3, inclusive, and (b) activating said deposition gas mixture by dehydrogenation or dehalogenation.
Claim 32
Dependent Claim
102 words
A process for manufacturing a semiconductor device comprising the step of depositing on a substrate one or more negatively-doped hydrogenated amorphous silicon alloy regions, at least one of said regions being made by (a) introducing into a deposition chamber during deposition a deposition gas mixture which includes one or more dopants having the formula: (SiX.sub.3).sub.m L X.sub.3-m wherein L is a Group 5A atom selected from the group of phosphorus, arsenic, antimony and bismuth, X is hydrogen, halogen or mixtures thereof, and m is an integer between 1 and 3, inclusive, and (b) activating said deposition gas mixture by dehydrogenation or dehalogenation.
Claim 33
Dependent Claim
13 words
The process of claim 25 wherein said semiconductor device is a photovoltaic device.
Claim 34
Dependent Claim
69 words
A process for manufacturing a semiconductor device comprising depositing on a substrate by photochemical vapor deposition one or more negatively-doped hydrogenated amorphous silicon regions from one or more dopants having the formula: (SiX.sub.3).sub.m L X.sub.3-m wherein L is a Group 5A atom selected from the group of phosphorus, arsenic, antimony and bismuth, X is hydrogen, halogen or mixtures thereof, and m is an integer between 1 and 3, inclusive.
Claim 35
Dependent Claim
69 words
A process for manufacturing a semiconductor device comprising depositing on a substrate by photochemical vapor deposition one or more negatively-doped hydrogenated amorphous silicon regions from one or more dopants having the formula: (SiX.sub.3).sub.m L X.sub.3-m wherein L is a Group 5A atom selected from the group of phosphorus, arsenic, antimony and bismuth, X is hydrogen, halogen or mixtures thereof, and m is an integer between 1 and 3, inclusive.
Claim 36
Dependent Claim
13 words
The process of claim 27 wherein said semiconductor device is a photovoltaic device.
Claim 37
Dependent Claim
112 words
A process for manufacturing a photovoltaic device comprising depositing one or more hydrogenated amorphous silicon alloy regions between a front and back contact, wherein at least one of said regions is a negatively-doped hydrogenated amorphous silicon alloy made by deposition in a deposition chamber by (a) introducing into the deposition chamber a deposition gas mixture which includes one or more dopants having the formula: (SiX.sub.3).sub.m L X.sub.3-m wherein L is a Group 5A atom selected from the group of phosphorus, arsenic, antimony and bismuth, X is hydrogen, halogen or mixtures thereof, and m is an integer between 1 and 3, inclusive, and (b) activating said deposition gas mixture by dehydrogenation or dehalogenation.
Claim 38
Dependent Claim
112 words
A process for manufacturing a photovoltaic device comprising depositing one or more hydrogenated amorphous silicon alloy regions between a front and back contact, wherein at least one of said regions is a negatively-doped hydrogenated amorphous silicon alloy made by deposition in a deposition chamber by (a) introducing into the deposition chamber a deposition gas mixture which includes one or more dopants having the formula: (SiX.sub.3).sub.m L X.sub.3-m wherein L is a Group 5A atom selected from the group of phosphorus, arsenic, antimony and bismuth, X is hydrogen, halogen or mixtures thereof, and m is an integer between 1 and 3, inclusive, and (b) activating said deposition gas mixture by dehydrogenation or dehalogenation.
Claim 39
Dependent Claim
120 words
A process for manufacturing a photovoltaic device comprising one or more hydrogenated amorphous silicon alloy regions between a front contact and a back contact wherein at least one of said regions is a negatively-doped hydrogenated amorphous silicon alloy made by (a) providing a deposition gas mixture which includes one or more dopants having the formula: (SiX.sub.3).sub.m L X.sub.3-m wherein L is a Group 5A atom selected from the group of phosphorus, arsenic, antimony and bismuth, X is hydrogen, halogen or mixtures thereof, and m is an integer between 1 and 3, inclusive, (b) mixing said deposition gas mixture with mercury vapor, (c) introducing the resulting mixture into a deposition chamber, and (d) irradiating said resulting mixture with a mercury lamp.
Claim 40
Dependent Claim
120 words
A process for manufacturing a photovoltaic device comprising one or more hydrogenated amorphous silicon alloy regions between a front contact and a back contact wherein at least one of said regions is a negatively-doped hydrogenated amorphous silicon alloy made by (a) providing a deposition gas mixture which includes one or more dopants having the formula: (SiX.sub.3).sub.m L X.sub.3-m wherein L is a Group 5A atom selected from the group of phosphorus, arsenic, antimony and bismuth, X is hydrogen, halogen or mixtures thereof, and m is an integer between 1 and 3, inclusive, (b) mixing said deposition gas mixture with mercury vapor, (c) introducing the resulting mixture into a deposition chamber, and (d) irradiating said resulting mixture with a mercury lamp.
Claim 41
Dependent Claim
106 words
A process for preparing a positively-doped hydrogenated amorphous silicon alloy by deposition of a positively-doped hydrogenated amorphous silicon alloy film onto a substrate in a deposition chamber comprising the steps of (a) introducing into the deposition chamber during deposition a deposition gas mixture which includes one or more dopants having the formula: Y.sub.n JX.sub.3 wherein Y is carbonyl, n is 0 or 1, J is a Group 3A atom, and X is hydrogen, halogen, or mixtures thereof, provided that when J is boron and n is 0 at least one X is other than fluorine, and (b) activating said deposition gas mixture by dehydrogenation of dehalogenation.
Claim 42
Dependent Claim
106 words
A process for preparing a positively-doped hydrogenated amorphous silicon alloy by deposition of a positively-doped hydrogenated amorphous silicon alloy film onto a substrate in a deposition chamber comprising the steps of (a) introducing into the deposition chamber during deposition a deposition gas mixture which includes one or more dopants having the formula: Y.sub.n JX.sub.3 wherein Y is carbonyl, n is 0 or 1, J is a Group 3A atom, and X is hydrogen, halogen, or mixtures thereof, provided that when J is boron and n is 0 at least one X is other than fluorine, and (b) activating said deposition gas mixture by dehydrogenation of dehalogenation.
Claim 43
Dependent Claim
15 words
The process of claim 31 wherein said activation step is accomplished by photochemical vapor deposition.
Claim 44
Dependent Claim
12 words
The process of claim 32 wherein said photochemical vapor deposition is mercury-sensitized.
Claim 45
Dependent Claim
20 words
The process of claim 31 wherein said activation step is accomplished by reacting said deposition gas mixture with atomic hydrogen.
Claim 46
Dependent Claim
22 words
The process of claim 31 wherein said activation step is accomplished by the catalytic dehydrogenation or dehalogenation of said deposition gas mixture.
Claim 47
Dependent Claim
23 words
The process of claim 31 wherein said activation step is accomplished by dehydrogenating said deposition gas mixture with molecular fluorine or atomic fluorine.
Claim 48
Dependent Claim
20 words
The process of claim 31 wherein said activation step is accomplished by injecting energetic electrons into said deposition gas mixture.
Claim 49
Dependent Claim
20 words
The process of claim 1 wherein J is boron, aluminum or gallium and X is hydrogen, fluorine or mixtures thereof.
Claim 50
Dependent Claim
13 words
The process of claim 31 wherein said deposition gas mixture also includes silane.
Claim 51
Dependent Claim
106 words
A process for preparing a positively-doped hydrogenated amorphous silicon alloy by deposition of a postively-doped hydrogenated amorphous silicon alloy film onto a substrate in a deposition chamber comprising the steps of (a) introducing into the deposition chamber during deposition a deposition gas mixture which includes one or more dopants having the formula: Y.sub.n JX.sub.3 wherein Y is carbonyl, n is 0 or 1, J is a Group 3A atom, and X is hydrogen, halogen, or mixtures thereof, provided that when J is boron and n is 0 at least one X is other than fluorine, and (b) activating said deposition gas mixture by dehydrogenating or dehalogenation.
Claim 52
Dependent Claim
106 words
A process for preparing a positively-doped hydrogenated amorphous silicon alloy by deposition of a postively-doped hydrogenated amorphous silicon alloy film onto a substrate in a deposition chamber comprising the steps of (a) introducing into the deposition chamber during deposition a deposition gas mixture which includes one or more dopants having the formula: Y.sub.n JX.sub.3 wherein Y is carbonyl, n is 0 or 1, J is a Group 3A atom, and X is hydrogen, halogen, or mixtures thereof, provided that when J is boron and n is 0 at least one X is other than fluorine, and (b) activating said deposition gas mixture by dehydrogenating or dehalogenation.
Claim 53
Dependent Claim
13 words
The process of claim 40 wherein said semiconductor device is a photovoltaic device.
Claim 54
Dependent Claim
76 words
A process for manufacturing a semiconductor device comprising depositing on a substrate by photochemical vapor deposition one or more positively-doped hydrogenated amorphous silicon alloy regions from one or more dopants having the formula: Y.sub.n JX.sub.3 wherein Y is carbonyl, n is 0 or 1, J is a Group 3A atom, and X is hydrogen, halogen, or mixtures thereof, provided that when J is boron and n is 0 at least one S is other than fluorine.
Claim 55
Dependent Claim
76 words
A process for manufacturing a semiconductor device comprising depositing on a substrate by photochemical vapor deposition one or more positively-doped hydrogenated amorphous silicon alloy regions from one or more dopants having the formula: Y.sub.n JX.sub.3 wherein Y is carbonyl, n is 0 or 1, J is a Group 3A atom, and X is hydrogen, halogen, or mixtures thereof, provided that when J is boron and n is 0 at least one S is other than fluorine.
Claim 56
Dependent Claim
13 words
The process of claim 42 wherein said semiconductor device is a photovoltaic device.
Claim 57
Dependent Claim
120 words
A process for manufacturing a photovoltaic devince comprising depositing one or more hydrogenated amorphous silicon alloy regions between a front contact and a back contact, wherein at least one of said regions is a positively-doped hydrogenated amorphous silicon alloy made by deposition in a deposition chamber by (a) introducing into the deposition chamber a deposition gas mixture which includes one or more dopants having the formula: Y.sub.n JX.sub.3 wherein Y is carbonyl, n is 0 or 1, J is a Group 3A atom, and X is hydrogen, halogen, or mixtures thereof, provided that when J is boron and n is 0 at least one X is other than fluorine, and (b) activating said deposition gas mixture by dehydrogenation or dehalogenation.
Claim 58
Dependent Claim
120 words
A process for manufacturing a photovoltaic devince comprising depositing one or more hydrogenated amorphous silicon alloy regions between a front contact and a back contact, wherein at least one of said regions is a positively-doped hydrogenated amorphous silicon alloy made by deposition in a deposition chamber by (a) introducing into the deposition chamber a deposition gas mixture which includes one or more dopants having the formula: Y.sub.n JX.sub.3 wherein Y is carbonyl, n is 0 or 1, J is a Group 3A atom, and X is hydrogen, halogen, or mixtures thereof, provided that when J is boron and n is 0 at least one X is other than fluorine, and (b) activating said deposition gas mixture by dehydrogenation or dehalogenation.
Claim 59
Dependent Claim
125 words
A process for manufacturing a photovoltaic device comprising one or more hydrogenated amorphous silicon alloy regions between a front contact and back contact, wherein at least one of the regions is a positively-doped hydrogenated amorphous silicon alloy made by (a) providing a deposition gas mixture which includes one or more dopants having the formula: Y.sub.n JX.sub.3 wherein Y is carbonyl, n is 0 or 1, J is a Group 3A atom, and X is hydrogen, halogen, or mixtures thereof, provided that when J is boron and n is 0 at least one X is other than fluorine, (b) mixing said deposition gas mixture with mercury vapor; (c) introducing the resulting mixture into a deposition chamber; and (d) irradiating said resulting mixture with a mercury lamp.
Claim 60
Dependent Claim
125 words
A process for manufacturing a photovoltaic device comprising one or more hydrogenated amorphous silicon alloy regions between a front contact and back contact, wherein at least one of the regions is a positively-doped hydrogenated amorphous silicon alloy made by (a) providing a deposition gas mixture which includes one or more dopants having the formula: Y.sub.n JX.sub.3 wherein Y is carbonyl, n is 0 or 1, J is a Group 3A atom, and X is hydrogen, halogen, or mixtures thereof, provided that when J is boron and n is 0 at least one X is other than fluorine, (b) mixing said deposition gas mixture with mercury vapor; (c) introducing the resulting mixture into a deposition chamber; and (d) irradiating said resulting mixture with a mercury lamp.
Claim 61
Dependent Claim
79 words
A process for preparing hydrogenated amorphous silicon alloy by deposition of hydrogenated amorphous silicon alloy film onto a substrate in a deposition chamber comprising the steps of (a) introducing into the deposition chamber during deposition a deposition gas mixture which includes one or more compounds having the formula: (SiX.sub.3).sub.n CX.sub.4-n wherein X is hydrogen, halogen or mixtures thereof, and n is an integer between 2 and 4, inclusive; and (b) activating said deposition gas mixture by dehydrogenation of dehalogenation.
Claim 62
Dependent Claim
79 words
A process for preparing hydrogenated amorphous silicon alloy by deposition of hydrogenated amorphous silicon alloy film onto a substrate in a deposition chamber comprising the steps of (a) introducing into the deposition chamber during deposition a deposition gas mixture which includes one or more compounds having the formula: (SiX.sub.3).sub.n CX.sub.4-n wherein X is hydrogen, halogen or mixtures thereof, and n is an integer between 2 and 4, inclusive; and (b) activating said deposition gas mixture by dehydrogenation of dehalogenation.
Claim 63
Dependent Claim
15 words
The process of claim 46 wherein said activation step is accomplished by photochemical vapor deposition.
Claim 64
Dependent Claim
12 words
The process of claim 47 wherein said photochemical vapor deposition is mercury-sensitized.
Claim 65
Dependent Claim
20 words
The process of claim 46 wherein said activation step is accomplished by reacting said deposition gas mixture with atomic hydrogen.
Claim 66
Dependent Claim
22 words
The process of claim 46 wherein said activation step is accomplished by the catalytic dehydrogenation or dehalogenation of said deposition gas mixture.
Claim 67
Dependent Claim
23 words
The process of claim 46 wherein said activation step is accomplished by dehydrogenation said deposition gas mixture with molecular fluorine or atomic fluorine.
Claim 68
Dependent Claim
20 words
The process of claim 46 wherein said activation step is accomplished by injecting energetic electrons into said deposition gas mixture.
Claim 69
Dependent Claim
13 words
The process of claim 46 wherein X is hydrogen, fluorine or mixtures thereof.
Claim 70
Dependent Claim
13 words
The process of claim 46 wherein said deposition gas mixture also includes silane.
Claim 71
Dependent Claim
84 words
A process for manufacturing a semiconductor device comprising the step of depositing on a substrate one or more hydrogenated amorphous silicon alloy regions, at least one of said regions being made by (a) introducing into a deposition chamber during deposition a deposition gas mixture which includes one or more compounds having the formula: (SiX.sub.3).sub.n CX.sub.4-n wherein X is hydrogen, halogen or mixtures thereof, and n is an integer between 2 and 4, inclusive; and (b) activating said deposition gas mixture by dehydrogenation or dehalogenation.
Claim 72
Dependent Claim
84 words
A process for manufacturing a semiconductor device comprising the step of depositing on a substrate one or more hydrogenated amorphous silicon alloy regions, at least one of said regions being made by (a) introducing into a deposition chamber during deposition a deposition gas mixture which includes one or more compounds having the formula: (SiX.sub.3).sub.n CX.sub.4-n wherein X is hydrogen, halogen or mixtures thereof, and n is an integer between 2 and 4, inclusive; and (b) activating said deposition gas mixture by dehydrogenation or dehalogenation.
Claim 73
Dependent Claim
13 words
The process of claim 55 wherein said semiconductor device is a photovoltaic device.
Claim 74
Dependent Claim
51 words
A process for manufacturing a semiconductor device comprising depositing on a substrate by photochemical vapor deposition one or more hydrogenated amorphous silicon alloy regions from one or more compounds having the formula: (SiX.sub.3).sub.n CX.sub.4-n wherein X hydrogen, halogen or mixtures thereof, and n is an integer between 2 and 4, inclusive.
Claim 75
Dependent Claim
51 words
A process for manufacturing a semiconductor device comprising depositing on a substrate by photochemical vapor deposition one or more hydrogenated amorphous silicon alloy regions from one or more compounds having the formula: (SiX.sub.3).sub.n CX.sub.4-n wherein X hydrogen, halogen or mixtures thereof, and n is an integer between 2 and 4, inclusive.
Claim 76
Dependent Claim
13 words
The process of claim 57 wherein said semiconductor device is a photovoltaic device.
Claim 77
Dependent Claim
97 words
A process for manufacturing a photovoltaic device comprising depositing one or more hydrogenated amorphous silicon alloy regions between a front contact and back contact, wherein at least one of the regions is a hydrogenated amorphous silicon alloy made by deposition in a deposition chamber by (a) introducing into a deposition chamber during deposition a deposition gas mixture which includes one or more compounds having the formula: (SiX.sub.3).sub.n CX.sub.4-n wherein X is hydrogen, halogen or mixtures thereof, and n is an integer between 2 and 4, inclusive; and (b) activating said deposition gas mixture by dehydrogenation or dehalogenation.
Claim 78
Dependent Claim
97 words
A process for manufacturing a photovoltaic device comprising depositing one or more hydrogenated amorphous silicon alloy regions between a front contact and back contact, wherein at least one of the regions is a hydrogenated amorphous silicon alloy made by deposition in a deposition chamber by (a) introducing into a deposition chamber during deposition a deposition gas mixture which includes one or more compounds having the formula: (SiX.sub.3).sub.n CX.sub.4-n wherein X is hydrogen, halogen or mixtures thereof, and n is an integer between 2 and 4, inclusive; and (b) activating said deposition gas mixture by dehydrogenation or dehalogenation.
Claim 79
Dependent Claim
102 words
A process for manufacturing a photovoltaic device comprising one or more hydrogenated amorphous silicon alloy regions between a front contact and back contact wherein at least one of the regions is a hydrogenated amorphous silicon alloy made by (a) providing a deposition gas mixture which includes one or more compounds having the formula: (SiX.sub.3).sub.n CX.sub.4-n wherein X is hydrogen, halogen or mixtures thereof, and n is an integer between 2 and 4, inclusive; and (b) mixing said deposition gas mixture with mercury vapor; (c) introducing the resulting mixture into a deposition chamber; and (d) irradiating said resulting mixture with a mercury lamp.
Claim 80
Dependent Claim
102 words
A process for manufacturing a photovoltaic device comprising one or more hydrogenated amorphous silicon alloy regions between a front contact and back contact wherein at least one of the regions is a hydrogenated amorphous silicon alloy made by (a) providing a deposition gas mixture which includes one or more compounds having the formula: (SiX.sub.3).sub.n CX.sub.4-n wherein X is hydrogen, halogen or mixtures thereof, and n is an integer between 2 and 4, inclusive; and (b) mixing said deposition gas mixture with mercury vapor; (c) introducing the resulting mixture into a deposition chamber; and (d) irradiating said resulting mixture with a mercury lamp.
Claim 81
Dependent Claim
16 words
The process of claim 31 wherein said deposition gas mixture includes borane carbonyl (BH 3 CO).
Claim 82
Dependent Claim
16 words
The process of claim 31 wherein said deposition gas mixture includes gallium trichloride (GaCl 3 ).
Claim 83
Dependent Claim
16 words
The process of claim 31 wherein said deposition gas mixture includes aluminum trichloride (AlCl 3 ).
Claim 84
Dependent Claim
16 words
The process of claim 31 wherein said deposition gas mixture includes boron difluoride (BHF 2 ).
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1990-08-31 | 1991-03-02 | 1991-09-01 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1994-08-31 | 1995-03-02 | 1995-09-01 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1998-08-31 | 1999-03-02 | 1999-09-01 | $7700.00 | Window Closed / Lapsed |