Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
70 words
A photosensitive member which comprises an electrically-conductive substrate, an amorphous silicon-germanium photoconductive layer overlying said electrically-conductive substrate, said amorphous silicon-germanium photoconductive layer having a thickness of about 0.1 to 3 microns and a molar ratio of silicon to germanium of about 1:1 to 19:1, and an amorphous silicon photoconductive layer overlying said amorphous silicon-germanium photoconductive layer, said amorphous silicon photoconductive layer having a thickness of about 5 to 30 microns.
Claim 2
Dependent Claim
70 words
A photosensitive member which comprises an electrically-conductive substrate, an amorphous silicon-germanium photoconductive layer overlying said electrically-conductive substrate, said amorphous silicon-germanium photoconductive layer having a thickness of about 0.1 to 3 microns and a molar ratio of silicon to germanium of about 1:1 to 19:1, and an amorphous silicon photoconductive layer overlying said amorphous silicon-germanium photoconductive layer, said amorphous silicon photoconductive layer having a thickness of about 5 to 30 microns.
Claim 3
Dependent Claim
36 words
A photosensitive member as claimed in claim 1 wherein said amorphous silicon-germanium photoconductive layer includes about 10 to 40 atomic of hydrogen and 10 to 20000 ppm of a Group IIIA impurity of the Periodic Table.
Claim 4
Dependent Claim
46 words
A photosensitive member as claimed in claim 2 wherein said amorphous silicon photoconductive layer includes about 10 to 40 atomic % of hydrogen, 10 to 20000 ppm of a Group IIIA impurity of the Periodic Table and 10 -5 to 5×10 -2 atomic % of oxygen.
Claim 5
Dependent Claim
23 words
A photosensitive member as claimed in claim 3 wherein the thickness of said amorphous silicon photoconductive layer is about 10 to 20 microns.
Claim 6
Dependent Claim
92 words
A photosensitive member which comprises an electrically-conductive substrate, an amorphous silicon semiconductor layer having a thickness of about 5 to 100 microns, and an amorphous silicon-germanium photoconductive layer formed on said amorphous silicon semiconductor layer and having a thickness of about 0.1 to 2 microns an a molar ratio of silicon to germanium of about 1:1 to 19:1 and further containing about 10 to 40 atomic % of hydrogen, 10 to 20000 ppm of a Group IIIA impurity of the Periodic Table and 10 -3 to 5×10 -2 atomic % of oxygen.
Claim 7
Dependent Claim
92 words
A photosensitive member which comprises an electrically-conductive substrate, an amorphous silicon semiconductor layer having a thickness of about 5 to 100 microns, and an amorphous silicon-germanium photoconductive layer formed on said amorphous silicon semiconductor layer and having a thickness of about 0.1 to 2 microns an a molar ratio of silicon to germanium of about 1:1 to 19:1 and further containing about 10 to 40 atomic % of hydrogen, 10 to 20000 ppm of a Group IIIA impurity of the Periodic Table and 10 -3 to 5×10 -2 atomic % of oxygen.
Claim 8
Dependent Claim
114 words
A photosensitive member which comprises an electrically-conductive substrate, an amorphous silicon photoconductive layer having a thickness of about 5 to 100 micron and containing about 10 to 40 atomic % of hydrogen, 10 to 20000 ppm of a Group IIIA impurity of the Periodic Table and 10 -5 to 5×10 -2 atomic % of oxygen, and an amorphous silicon-germanium photoconductive layer formed on said amorphous silicon photoconductive layer and having a thickness of less 1 micron and more than 0.1 micron and containing about 10 to 40 atomic % of hydrogen, 10 to 20000 ppm of a Group IIIA impurity of the Periodic Table and 10 -3 to 5×10 -2 atomic % of oxygen.
Claim 9
Dependent Claim
114 words
A photosensitive member which comprises an electrically-conductive substrate, an amorphous silicon photoconductive layer having a thickness of about 5 to 100 micron and containing about 10 to 40 atomic % of hydrogen, 10 to 20000 ppm of a Group IIIA impurity of the Periodic Table and 10 -5 to 5×10 -2 atomic % of oxygen, and an amorphous silicon-germanium photoconductive layer formed on said amorphous silicon photoconductive layer and having a thickness of less 1 micron and more than 0.1 micron and containing about 10 to 40 atomic % of hydrogen, 10 to 20000 ppm of a Group IIIA impurity of the Periodic Table and 10 -3 to 5×10 -2 atomic % of oxygen.
Claim 10
Dependent Claim
24 words
A photosensitive member as claimed in claim 6 wherein the thickness of said amorphous silicon-germanium photoconductive layer is preferably about 0.1 to 0.5 microns.