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US4491626A Expired / Lapsed US ⏱️ 0.0 years remaining

Photosensitive member

Assignee: Kyocera Corp
•
Filing: 1983-03-07
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Granted: 1985-01-01
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Expires: 2003-03-07
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Abstract

Abstract The invention disclosed relates to a photosensitive member having excellent photosensitivity characteristics in the visible light region as well as in the near infrared region. According to first embodiment of the invention, the photosensitive member comprises an electrically conductive substrate, an amorphous silicon-germanium photoconductive layer having a thickness of about 0.1 to 3 microns, and an amorphous silicon photoconductive layer of 5 to 30 micron thick formed on the amorphous silicon-germanium photoconductive layer. Second embodiment of the photosensitive member comprises a substrate, an amorphous silicon semiconductor layer of 5 to 100 micron thick and an amorphous silicon-germanium photoconductive layer formed on the amorphous silicon semiconductor layer.

Inventors

  • 👤 Takao Kawamura
  • 👤 Masazumi Yoshida

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-31 06:37
CPC Classifications
G; G03; G03G; G03G5/00; G03G5/02; G03G5/04; G03G5/08; G03G5/082; G03G5/08214; G03G5/08221

Claims Analysis

Total Claims: 10
Claim 1
Independent Claim 70 words
A photosensitive member which comprises an electrically-conductive substrate, an amorphous silicon-germanium photoconductive layer overlying said electrically-conductive substrate, said amorphous silicon-germanium photoconductive layer having a thickness of about 0.1 to 3 microns and a molar ratio of silicon to germanium of about 1:1 to 19:1, and an amorphous silicon photoconductive layer overlying said amorphous silicon-germanium photoconductive layer, said amorphous silicon photoconductive layer having a thickness of about 5 to 30 microns.
Claim 2
Dependent Claim 70 words
A photosensitive member which comprises an electrically-conductive substrate, an amorphous silicon-germanium photoconductive layer overlying said electrically-conductive substrate, said amorphous silicon-germanium photoconductive layer having a thickness of about 0.1 to 3 microns and a molar ratio of silicon to germanium of about 1:1 to 19:1, and an amorphous silicon photoconductive layer overlying said amorphous silicon-germanium photoconductive layer, said amorphous silicon photoconductive layer having a thickness of about 5 to 30 microns.
Claim 3
Dependent Claim 36 words
A photosensitive member as claimed in claim 1 wherein said amorphous silicon-germanium photoconductive layer includes about 10 to 40 atomic of hydrogen and 10 to 20000 ppm of a Group IIIA impurity of the Periodic Table.
Claim 4
Dependent Claim 46 words
A photosensitive member as claimed in claim 2 wherein said amorphous silicon photoconductive layer includes about 10 to 40 atomic % of hydrogen, 10 to 20000 ppm of a Group IIIA impurity of the Periodic Table and 10 -5 to 5×10 -2 atomic % of oxygen.
Claim 5
Dependent Claim 23 words
A photosensitive member as claimed in claim 3 wherein the thickness of said amorphous silicon photoconductive layer is about 10 to 20 microns.
Claim 6
Dependent Claim 92 words
A photosensitive member which comprises an electrically-conductive substrate, an amorphous silicon semiconductor layer having a thickness of about 5 to 100 microns, and an amorphous silicon-germanium photoconductive layer formed on said amorphous silicon semiconductor layer and having a thickness of about 0.1 to 2 microns an a molar ratio of silicon to germanium of about 1:1 to 19:1 and further containing about 10 to 40 atomic % of hydrogen, 10 to 20000 ppm of a Group IIIA impurity of the Periodic Table and 10 -3 to 5×10 -2 atomic % of oxygen.
Claim 7
Dependent Claim 92 words
A photosensitive member which comprises an electrically-conductive substrate, an amorphous silicon semiconductor layer having a thickness of about 5 to 100 microns, and an amorphous silicon-germanium photoconductive layer formed on said amorphous silicon semiconductor layer and having a thickness of about 0.1 to 2 microns an a molar ratio of silicon to germanium of about 1:1 to 19:1 and further containing about 10 to 40 atomic % of hydrogen, 10 to 20000 ppm of a Group IIIA impurity of the Periodic Table and 10 -3 to 5×10 -2 atomic % of oxygen.
Claim 8
Dependent Claim 114 words
A photosensitive member which comprises an electrically-conductive substrate, an amorphous silicon photoconductive layer having a thickness of about 5 to 100 micron and containing about 10 to 40 atomic % of hydrogen, 10 to 20000 ppm of a Group IIIA impurity of the Periodic Table and 10 -5 to 5×10 -2 atomic % of oxygen, and an amorphous silicon-germanium photoconductive layer formed on said amorphous silicon photoconductive layer and having a thickness of less 1 micron and more than 0.1 micron and containing about 10 to 40 atomic % of hydrogen, 10 to 20000 ppm of a Group IIIA impurity of the Periodic Table and 10 -3 to 5×10 -2 atomic % of oxygen.
Claim 9
Dependent Claim 114 words
A photosensitive member which comprises an electrically-conductive substrate, an amorphous silicon photoconductive layer having a thickness of about 5 to 100 micron and containing about 10 to 40 atomic % of hydrogen, 10 to 20000 ppm of a Group IIIA impurity of the Periodic Table and 10 -5 to 5×10 -2 atomic % of oxygen, and an amorphous silicon-germanium photoconductive layer formed on said amorphous silicon photoconductive layer and having a thickness of less 1 micron and more than 0.1 micron and containing about 10 to 40 atomic % of hydrogen, 10 to 20000 ppm of a Group IIIA impurity of the Periodic Table and 10 -3 to 5×10 -2 atomic % of oxygen.
Claim 10
Dependent Claim 24 words
A photosensitive member as claimed in claim 6 wherein the thickness of said amorphous silicon-germanium photoconductive layer is preferably about 0.1 to 0.5 microns.

References Cited (Backward Citations)

US3719486A Cited
US3647427A Cited
US3696262A Cited
US4147667A Cited
JPS5562781A Cited
JPS5611603A Cited
JPS56150753A Cited
US4451546A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1988-01-01 1988-07-02 1989-01-01 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1992-01-01 1992-07-02 1993-01-01 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1996-01-01 1996-07-02 1997-01-01 $7700.00 Window Closed / Lapsed

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