US4532150A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for providing a coating layer of silicon carbide on the surface of a substrate
Assignee: Shin-Etsu Chemical Co Ltd
•
Filing: 1983-12-22
•
Granted: 1985-07-30
•
Expires: 2003-12-22
Abstract
Abstract The invention provides a novel method for providing the surface of various kinds of substrate articles, e.g. sapphire, quartz, alumina, metals, glass, plastics and the like with a coating layer of an amorphous silicon carbide of the formula SixC1-x, in which x is a positive number of 0.2 to 0.9, by exposing the surface of the substrate article to an atmosphere of plasma generated in a gaseous atmosphere of an organosilicon compound having no halogen or oxygen atom directly bonded to the silicon atom, such as hexamethyl disilane, optionally admixed with a vapor or gas of a hydrocarbon compound, e.g. methane, benzene and the like.
Inventors
- 👤 Morinobu Endo
- 👤 Minoru Takamizawa
- 👤 Tatsuhiko Hongu
- 👤 Susumu Ueno
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 07:22
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/6336; C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/32; C23C16/325; H10P14/69; H10P14/6903; H10P14/6905
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
87 words
A method for providing a coating layer of an amorphous silicon carbide of the composition expressed by the formula Si x C 1-x , in which x is a positive number in the range from 0.2 to 0.9, on to the surface of a substrate which comprises subjecting the surface of the substrate to an atmosphere of plasma generated in a gaseous atmosphere containing a vapor or gas of an organosilicon compound having no halogen or oxygen atom directly bonded to the silicon atom in the molecule.
Claim 2
Independent Claim
87 words
A method for providing a coating layer of an amorphous silicon carbide of the composition expressed by the formula Si x C 1-x , in which x is a positive number in the range from 0.2 to 0.9, on to the surface of a substrate which comprises subjecting the surface of the substrate to an atmosphere of plasma generated in a gaseous atmosphere containing a vapor or gas of an organosilicon compound having no halogen or oxygen atom directly bonded to the silicon atom in the molecule.
Claim 3
Dependent Claim
104 words
The method as claimed in claim 1 wherein the organosilicon compound is selected from the class consisting of organosilane or organopolysilane compounds represented by the general formula R 2n+2 Si n , in which R is a hydrogen atom or a monovalent hydrocarbon group and n is a positive integer of 1 to 4, and organosilhydrocarbylene compounds represented by the general formula R 3 Si--(--R 1 --SiR 2 --) m --R, in which R has the same meaning as defined above, R 1 is a hydrocarbylene group selected from the class consisting of methylene, ethylene and phenylene groups, and m is 1 or 2.
Claim 4
Dependent Claim
27 words
The method as claimed in claim 1 wherein the vapor or gas of the organosilicon compound is admixed with a vapor or gas of a hydrocarbon compound.
Claim 5
Dependent Claim
26 words
The method as claimed in claim 3 wherein the hydrocarbon compound is selected from the class consisting of methane, ethane, propane, ethylene, acetylene, benzene and toluene.
Claim 6
Dependent Claim
23 words
The method as claimed in claim 1 wherein the pressure of the gaseous atmosphere is in the range from 0.05 to 1 Torr.
Claim 7
Dependent Claim
26 words
The method as claimed in claim 1 wherein the organosilicon compound has at least one hydrogen atom directly bonded to the silicon atom in a molecule.
Claim 8
Dependent Claim
20 words
The method as claimed in claim 1 wherein the organosilicon compound has at least two silicon atoms in a molecule.
Claim 9
Dependent Claim
23 words
The method as claimed in claim 1 wherein the substrate is kept at a temperature in the range from 50° to 500° C.
Claim 10
Dependent Claim
27 words
The method as claimed in claim 7 wherein the organosilicon compound is selected from the class consisting of 1,1,2,2-tetramethyl disilane, hexamethyl disilane, 1,1,2,2,3,3-hexamethyl trisilane and 1,1,2,3,3-pentamethyl trisilane.
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1988-07-29 | 1989-01-28 | 1989-07-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1992-07-29 | 1993-01-28 | 1993-07-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1996-07-29 | 1997-01-28 | 1997-07-30 | $7700.00 | Window Closed / Lapsed |