US4683145A
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Method for forming deposited film
Assignee: Canon Inc
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Filing: 1985-04-11
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Granted: 1987-07-28
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Expires: 2005-04-11
Abstract
Abstract A method of forming a deposited film comprises forming a gaseous atmosphere of at least one silicon compound selected from those having the formula (A), (B) or (C) as shown below in a deposition chamber in which a substrate is arranged, and exciting and decomposing said compound by utilization of light energy thereby to form a desired film containing silicon atoms on said substrate: <IMAGE> (A) wherein l represents 3, 4 or 5; and R represents H or SiH3; <IMAGE> (B) wherein R1 and R2 independently represent H or an alkyl group having 1 to 3 carbon atoms; m an integer of 3 to 7; and n an integer of 1 to 11; R1-(SixR2R3)p-R4 (c) wherein R1 and R4 independently represent a phenyl or naphthyl group which may be substituted with halogens, or an alkyl group having 1 to 11 carbon atoms; R2 and R3 independently represent H or CH3; and p represents an integer of 3 to 7.
Inventors
- 👤 Yukuo Nishimura
- 👤 Ken Eguchi
- 👤 Hiroshi Matsuda
- 👤 Masahiro Haruta
- 👤 Yutaka Hirai
- 👤 Takashi Nakagiri
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 08:39
CPC Classifications
B; B05; B05D; B05D1/00; B05D1/60; C; C23; C23C; C23C16/00; C23C16/22; C23C16/44; C23C16/48; C23C16/482; C23C16/483; C23C16/488; H; H10; H10P; H10P14/00; H10P14/20; H10P14/24; H10P14/29; H10P14/2901; H10P14/32; H10P14/3202; H10P14/3204; H10P14/3211; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/3438; H10P14/3441; H10P14/3442; H10P14/3444; B05D3/00; B05D3/06
Claims Analysis
Total Claims: 19
Claim 1
Independent Claim
201 words
A method for forming a deposited film, which comprises forming a gaseous atmosphere of at least one silicon compound moiety selected from the group consisting of: (i) a compound of formula A and a halogen gas; (ii) a compound of formula B; or (iii) a compound of formula C, in a deposition chamber in which a substrate is arranged, and exciting and decomposing said compound by utilization of light energy thereby to forma deposited film containing silicon atoms on said substrate, wherein (a) formula A is ##STR15## wherein l represents 3, 4 or 5; and R represents H or SiH 3 ; (b) formula B is ##STR16## wherein R 1 and R 2 independently represent H or an alkyl group having 1 to 3 carbon atoms; m an integer of 3 to 7; and n an integer of 1 to 11; and (c) formula C is R.sup.1 --(Si·R.sup.2 R.sup.3).sub.p --R.sup.4 (C) wherein R 1 and R 4 independently represent a phenyl or naphthyl group which may be substituted with halogens, or an alkyl group having 1 to 11 carbon atoms; R 2 and R 3 independently represent H or CH 3 ; and p represents an integer of 3 to 7.
Claim 2
Independent Claim
201 words
A method for forming a deposited film, which comprises forming a gaseous atmosphere of at least one silicon compound moiety selected from the group consisting of: (i) a compound of formula A and a halogen gas; (ii) a compound of formula B; or (iii) a compound of formula C, in a deposition chamber in which a substrate is arranged, and exciting and decomposing said compound by utilization of light energy thereby to forma deposited film containing silicon atoms on said substrate, wherein (a) formula A is ##STR15## wherein l represents 3, 4 or 5; and R represents H or SiH 3 ; (b) formula B is ##STR16## wherein R 1 and R 2 independently represent H or an alkyl group having 1 to 3 carbon atoms; m an integer of 3 to 7; and n an integer of 1 to 11; and (c) formula C is R.sup.1 --(Si·R.sup.2 R.sup.3).sub.p --R.sup.4 (C) wherein R 1 and R 4 independently represent a phenyl or naphthyl group which may be substituted with halogens, or an alkyl group having 1 to 11 carbon atoms; R 2 and R 3 independently represent H or CH 3 ; and p represents an integer of 3 to 7.
Claim 3
Dependent Claim
41 words
A method according to claim 1, wherein the silicon compound moiety employed is a cyclic silane compound represented by the formula A: ##STR17## wherein l represents 3, 4 or 5; and R represents H or SiH 3 and a halogen gas.
Claim 4
Dependent Claim
22 words
A method according to claim 1, wherein a halogen gas is introduced together with the compound of formula B or formula C.
Claim 5
Dependent Claim
28 words
A method according to claim 1, wherein also a compound containing an element belonging to the group III or the group V of the periodic table is introduced.
Claim 6
Dependent Claim
26 words
A method according to claim 4, wherein the atom of the group III of the periodic table is selected from B, Al, Ga, In and Tl.
Claim 7
Dependent Claim
26 words
A method according to claim 4, wherein the atom of the group V of the periodic table is selected from N, P, As, Sb and Bi.
Claim 8
Dependent Claim
21 words
A method according to claim 1, wherein the light energy utilized is selected from UV-ray, IR-ray, visible ray, X-ray and γ-ray.
Claim 9
Dependent Claim
25 words
A method according to claim 3 wherein the halogen gas is selected from F 2 , Cl 2 , Br 2 and I 2 .
Claim 10
Dependent Claim
29 words
A method according to claim 1, wherein the means for supplying light energy is selected from mercury lamp, xenon lamp, carbon dioxide laser, argon ion laser and excimer laser.
Claim 11
Dependent Claim
20 words
A method according to claim 1, wherein the cyclic compound employed is selected from the compounds No. 1-No. 5: ##STR18##
Claim 12
Dependent Claim
19 words
A method according to claim 1, wherein the silicon compound employed is selected from the compounds No. 6-25: ##STR19##
Claim 13
Dependent Claim
18 words
A method according to claim 1, wherein the silicon compound employed is selected from the compounds No.: ##STR20##
Claim 14
Independent Claim
90 words
A method for forming a depositied film, which comprises forming a gaseous atmosphere of at least one silicon compound having the formula: ##STR21## wherein R 1 and R 2 independently represent H or an alkyl group having 1 to 3 carbon atoms; m an integer of 3 to 7; and n an integer of 1 to 11, in a deposition chamber in which a substrate is arranged and exciting and decomposing said compound by utilization of light energy thereby to form a deposited film containing silicon atoms on said substrate.
Claim 15
Independent Claim
90 words
A method for forming a depositied film, which comprises forming a gaseous atmosphere of at least one silicon compound having the formula: ##STR21## wherein R 1 and R 2 independently represent H or an alkyl group having 1 to 3 carbon atoms; m an integer of 3 to 7; and n an integer of 1 to 11, in a deposition chamber in which a substrate is arranged and exciting and decomposing said compound by utilization of light energy thereby to form a deposited film containing silicon atoms on said substrate.
Claim 16
Independent Claim
108 words
A method for forming a deposited film, which comprises forming a gaseous atmosphere of at least one silicon compound having the formula: R.sup.1 --(Si·R.sup.2 R.sup.3).sub.p --R.sup.4 wherein R 1 and R 4 independently represent a phenyl or naphthyl group which may be substituted with halogens, or an alkyl group having 1 to 11 carbon atoms; R 2 and R 3 independently represent H or CH 3 ; p represents an integer of 3 to 7, in a deposition chamber in which a substrate is arranged and exciting and decomposing said compound by utilization of light energy thereby to form a deposited film containing silicon atoms on said substrate.
Claim 17
Independent Claim
108 words
A method for forming a deposited film, which comprises forming a gaseous atmosphere of at least one silicon compound having the formula: R.sup.1 --(Si·R.sup.2 R.sup.3).sub.p --R.sup.4 wherein R 1 and R 4 independently represent a phenyl or naphthyl group which may be substituted with halogens, or an alkyl group having 1 to 11 carbon atoms; R 2 and R 3 independently represent H or CH 3 ; p represents an integer of 3 to 7, in a deposition chamber in which a substrate is arranged and exciting and decomposing said compound by utilization of light energy thereby to form a deposited film containing silicon atoms on said substrate.
Claim 18
Dependent Claim
20 words
A method according to claim 1, including maintaining the substrate temperature of about 50° to 150° C. during film formation.
Claim 19
Dependent Claim
25 words
A method according to claim 1, wherein the halogen gas is selected from F 2 , Cl 2 , Br 2 and I 2 .
References Cited (Backward Citations)
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