Patent US5622607A successfully refreshed from Google Patents.
US5622607A
Expired / Lapsed
US
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Method of forming an oxide insulating film
Assignee: Semiconductor Energy Laboratory Co Ltd
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Filing: 1991-11-15
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Granted: 1997-04-22
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Expires: 2011-11-15
Abstract
Abstract A process for fabricating films improved in interface characteristics, which comprises depositing an oxide insulating film by sputtering under an irradiation of a light in an atmosphere comprising an oxidative gas at an amount larger than that of an inactive gas is disclosed. Particularly, a light having a wavelength of 300 nm or shorter is used for the irradiation.
Inventors
- 👤 Shunpei Yamazaki
- 👤 Takashi Inushima
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 16:53
CPC Classifications
C; C23; C23C; C23C14/00; C23C14/0021; C23C14/0036; C23C14/22; C23C14/34; C23C14/35; C23C14/354
Claims Analysis
Total Claims: 20
Claim 1
Independent Claim
70 words
A method of forming an oxide insulating film comprising: sputtering a material in an atmosphere comprising an oxidizing gas at a first volume ratio in a chamber; emitting a light into said chamber to enhance the sputtering; and depositing the sputtered material on a substrate wherein said atmosphere further comprises an inactive gas at a second volume ratio wherein said second volume ratio is less than said first volume ratio.
Claim 2
Independent Claim
70 words
A method of forming an oxide insulating film comprising: sputtering a material in an atmosphere comprising an oxidizing gas at a first volume ratio in a chamber; emitting a light into said chamber to enhance the sputtering; and depositing the sputtered material on a substrate wherein said atmosphere further comprises an inactive gas at a second volume ratio wherein said second volume ratio is less than said first volume ratio.
Claim 3
Dependent Claim
30 words
The method of claim 1 wherein at least one of said substrate and the sputtered material on the way to said substrate is irradiated with a light during the deposition.
Claim 4
Dependent Claim
19 words
The method of claim 1 wherein said light comprises a light having wavelength of no more than 300 nm.
Claim 5
Dependent Claim
12 words
The method of claim 1 wherein said light comprises an ultraviolet ray.
Claim 6
Dependent Claim
23 words
The method of claim 1 wherein said oxidizing gas comprises a gas selected from the group consisting of oxygen, ozone and nitrous oxide.
Claim 7
Dependent Claim
30 words
The method of claim 1 wherein said atmosphere further comprises a gas selected from the group consisting of PH 3 , B 2 H 6 and a halogen containing gas.
Claim 8
Dependent Claim
22 words
The method of claim 1 wherein said sputtering is implemented by radio frequency sputtering, D.C. sputtering or a high frequency magnetron sputtering.
Claim 9
Independent Claim
132 words
A method of forming an insulated gate field effect transistor comprising: forming a semiconductor film to be a channel on a substrate; forming an oxide insulating film on said semiconductor film by sputtering a material in an atmosphere comprising an oxidizing gas at a first volume ratio with at least one of the sputtered material on the way to a surface to be coated therewith and said surface irradiated with a light; forming source and drain semiconductor regions on said substrate; and forming a gate electrode on said oxide insulating film in order to define a channel under said gate electrode between said source and drain regions wherein said atmosphere further comprises an inactive gas at a second volume ratio wherein said second volume ratio is less than said first volume ratio.
Claim 10
Independent Claim
132 words
A method of forming an insulated gate field effect transistor comprising: forming a semiconductor film to be a channel on a substrate; forming an oxide insulating film on said semiconductor film by sputtering a material in an atmosphere comprising an oxidizing gas at a first volume ratio with at least one of the sputtered material on the way to a surface to be coated therewith and said surface irradiated with a light; forming source and drain semiconductor regions on said substrate; and forming a gate electrode on said oxide insulating film in order to define a channel under said gate electrode between said source and drain regions wherein said atmosphere further comprises an inactive gas at a second volume ratio wherein said second volume ratio is less than said first volume ratio.
Claim 11
Dependent Claim
58 words
The method of claim 8 further comprising the step of forming on said substrate an oxide insulating film prior to the formation of said semiconductor film by sputtering a material in an atmosphere comprising an oxidizing gas with at least one of the sputtered material on the way to said substrate and said substrate irradiated with a light.
Claim 12
Dependent Claim
35 words
The method of claim 9 wherein both of said sputtered material and said substrate are irradiated with a light during the formation of the oxide insulating film prior to the formation of said semiconductor film.
Claim 13
Dependent Claim
27 words
The method of claim 8 wherein both of said sputtered material and said surface are irradiated with a light during the formation of said oxide insulating film.
Claim 14
Dependent Claim
19 words
The method of claim 8 wherein said light comprises a light having wavelength of no more than 300 nm.
Claim 15
Dependent Claim
12 words
The method of claim 8 wherein said light comprises an ultraviolet ray.
Claim 16
Independent Claim
99 words
A method of forming a capacitor comprising: forming an electrode layer on a substrate; forming an oxide insulating layer on said electrode layer by sputtering a material in an atmosphere comprising an oxidizing gas at a first volume ratio with at least one of the sputtered material on the way to a surface to be coated therewith and said surface irradiated with a light; and forming another electrode layer on said oxide insulating layer wherein said atmosphere further comprises an inactive gas at a second volume ratio wherein said second volume ratio is less than said first volume ratio.
Claim 17
Independent Claim
99 words
A method of forming a capacitor comprising: forming an electrode layer on a substrate; forming an oxide insulating layer on said electrode layer by sputtering a material in an atmosphere comprising an oxidizing gas at a first volume ratio with at least one of the sputtered material on the way to a surface to be coated therewith and said surface irradiated with a light; and forming another electrode layer on said oxide insulating layer wherein said atmosphere further comprises an inactive gas at a second volume ratio wherein said second volume ratio is less than said first volume ratio.
Claim 18
Dependent Claim
22 words
The method of claim 14 wherein both of said sputtered material and said surface are irradiated with a light during the sputtering.
Claim 19
Dependent Claim
19 words
The method of claim 14 wherein said light comprises a light having wavelength of no more than 300 nm.
Claim 20
Dependent Claim
12 words
The method of claim 14 wherein said light comprises an ultraviolet ray.
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