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EP0190051A2 Expired / Lapsed EP ⏱️ 0.0 years remaining

Method and apparatus for forming films

Assignee: Toshiba Corp
•
Filing: 1986-01-30
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Granted: —
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Expires: 2006-01-30
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Abstract

Abstract In a method and apparatus for forming a film wherein ions formed by electric discharge are caused to sputter a target electrode (7), and atoms emitted by the target electrode (7) as a result of sputtering are deposited on the surface of a substrate (9) to form the film, light is projected upon the surface of the substrate (9) to activate the same.

Inventors

  • 👤 Tetsuo Matsuda
  • 👤 Hitoshi Ito

Bibliographic Details

Application Number —
Jurisdiction EP
Data Source google_patents
Last Synchronized 2026-11-02 06:34
CPC Classifications
C; C23; C23C; C23C14/00; C23C14/22; C23C14/34; C23C14/3435

Claims Analysis

Total Claims: 7
Claim 1
Independent Claim 55 words
A method of forming a film of the type wherein a target electrode is sputtered by ions formed by electric discharge for depositing material of the target electrode on the surface of a substrate to form the film, characterized by the step of depositing said material on said surface while activating the same with light.
Claim 2
Independent Claim 55 words
A method of forming a film of the type wherein a target electrode is sputtered by ions formed by electric discharge for depositing material of the target electrode on the surface of a substrate to form the film, characterized by the step of depositing said material on said surface while activating the same with light.
Claim 3
Dependent Claim 22 words
The method according to claim 1 wherein said substrate contains non-refractory metal and said light has a wavelength shorter than 1000 nm.
Claim 4
Dependent Claim 24 words
The method according to claim 1 wherein said film is made of silicon dioxide and said light has a wavelength longer than 5000 nm.
Claim 5
Dependent Claim 29 words
The method according to claim 1 wherein said film is made of a member selected from the group consisting of refractory metals, silicide of refractory metal, and polycrystalline silicon.
Claim 6
Dependent Claim 60 words
Film forming apparatus of the type wherein ions formed by electric discharge are caused to collide upon a target electrode and atoms emitted from the target electrode as a result of sputtering of the ions are deposited on the surface of a substrate characterized in that there. is provided means for projecting light of a predetermined wavelength upon the substrate.
Claim 7
Dependent Claim 60 words
Film forming apparatus of the type wherein ions formed by electric discharge are caused to collide upon a target electrode and atoms emitted from the target electrode as a result of sputtering of the ions are deposited on the surface of a substrate characterized in that there. is provided means for projecting light of a predetermined wavelength upon the substrate.

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