Patent US5620525A successfully refreshed from Google Patents.
US5620525A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Apparatus for supporting a substrate and introducing gas flow doximate to an edge of the substrate
Assignee: Novellus Systems Inc
•
Filing: 1994-08-23
•
Granted: 1997-04-15
•
Expires: 2014-08-23
Abstract
Abstract A platen supports a substrate on an interior platen region during the deposition of materials such as tungsten, metal nitrides, other metals, and silicides in a chemical vapor deposition ("CCVD") reactor. A deposition control gas composed of a suitable inert gas such as argon or a mixture of inert and reactive gases such as argon and hydrogen is introduced into the CVD reactor. Deposition control gas is preferably introduced through a restrictive opening in a gas orifice surrounding the platen interior region and exits near an edge of the substrate. The restrictive opening accommodates a uniform deposition control gas flow proximate to an edge of the substrate at a pressure greater than reactor pressure near the substrate edge. The deposition control gas substantially prevents process gas access to the substrate edge and backside. In one embodiment, the restrictive opening is formed by placing a restrictive insert within a gas groove surrounding the platen interior region. In another embodiment, the restrictive opening is formed by an exclusion guard substantially uniformly spaced from the edge of the substrate.
Inventors
- 👤 Everhardus P. van de Ven
- 👤 Eliot K. Broadbent
- 👤 Jeffrey C. Benzing
- 👤 Barry L. Chin
- 👤 Christopher W. Burkhart
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:51
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/44; C23C16/455; C23C16/45519; C23C16/45521; C23C16/04; C23C16/4401; C23C16/458; C23C16/4582; C23C16/4583; C23C16/4585; C23C16/4586; C23C16/54; H; H10; H10P; H10P72/00; H10P72/04; H10P72/0402; H10P72/0431; H10P72/0434; H10P72/70; H10P72/76; H10P72/7604; H10P72/7611; H10P72/7618; H10P72/7621; H10P72/7624; H10P72/78
Claims Analysis
Total Claims: 52
Claim 1
Independent Claim
139 words
An apparatus for supporting a substrate in a process chamber of a chemical vapor deposition reactor, the substrate having a thickness and a shape, comprising: a platen mounted in the process chamber, the platen having a gas orifice defining a periphery of an interior region, the interior region having a surface, the surface having a shape substantially coextensive with the shape of the substrate, and the platen further having an exterior region surrounding the interior region; and a projecting member having an inner surface surrounding a volume, the volume being peripherally coextensive with the interior region, the projecting member extending from the exterior region, the inner surface of the projecting member extending to at least the thickness of the substrate, and the inner surface of the projecting member being approximately uniformly spaced apart from a periphery of the volume.
Claim 2
Independent Claim
139 words
An apparatus for supporting a substrate in a process chamber of a chemical vapor deposition reactor, the substrate having a thickness and a shape, comprising: a platen mounted in the process chamber, the platen having a gas orifice defining a periphery of an interior region, the interior region having a surface, the surface having a shape substantially coextensive with the shape of the substrate, and the platen further having an exterior region surrounding the interior region; and a projecting member having an inner surface surrounding a volume, the volume being peripherally coextensive with the interior region, the projecting member extending from the exterior region, the inner surface of the projecting member extending to at least the thickness of the substrate, and the inner surface of the projecting member being approximately uniformly spaced apart from a periphery of the volume.
Claim 3
Dependent Claim
18 words
The apparatus as in claim 1 wherein the projecting member comprises a ring removably coupled to the platen.
Claim 4
Dependent Claim
11 words
The apparatus as in claim 2 wherein the ring is alumina.
Claim 5
Dependent Claim
22 words
The apparatus as in claim 2 wherein the ring includes at least two registration points, and the platen includes two registration points.
Claim 6
Dependent Claim
17 words
The apparatus as in claim 1 wherein the projecting member comprises a raised portion of the platen.
Claim 7
Dependent Claim
16 words
The apparatus as in claim 5 wherein the platen and the raised portion thereof are aluminum.
Claim 8
Dependent Claim
16 words
The apparatus as in claim 1 wherein the gas orifice is a continuous, annular gas groove.
Claim 9
Dependent Claim
17 words
The apparatus as in claim 7 wherein a gas flow restriction is formed in the gas groove.
Claim 10
Dependent Claim
17 words
The apparatus as in claim 8 wherein the restriction comprises a ring contained in the gas groove.
Claim 11
Dependent Claim
29 words
The apparatus as in claim 9 wherein a major surface of the ring is spaced apart from an inside surface of the gas groove to provide a restricted passage.
Claim 12
Dependent Claim
43 words
The apparatus as in claim 10 wherein the restricted passage has a thickness and wherein the ring lies in a plane and has a dimension normal to the plane that is at least ten times larger than the thickness of the restricted passage.
Claim 13
Dependent Claim
14 words
The apparatus as in claim 11 wherein the platen and the ring are aluminum.
Claim 14
Dependent Claim
27 words
The apparatus as in claim 1 further comprising an additional gas orifice extending from an upper surface of the projecting member and merging with the gas orifice.
Claim 15
Dependent Claim
27 words
The apparatus as in claim 13 wherein the gas orifice is a groove, and the additional gas orifice comprises a plurality of holes merging with the groove.
Claim 16
Dependent Claim
32 words
The apparatus as in claim 14 wherein the gas orifice is a groove, further comprising a plurality of uniformly spaced holes merging with the groove from the top of the projecting member.
Claim 17
Dependent Claim
13 words
The apparatus as in claim 1 wherein the platen includes a vacuum chuck.
Claim 18
Dependent Claim
19 words
The apparatus as in claim 1 wherein the inner surface is substantially vertical and extends from the exterior region.
Claim 19
Dependent Claim
16 words
The apparatus as in claim 1 wherein the gas orifice is a continuous, annular gas groove.
Claim 20
Dependent Claim
22 words
The apparatus as in claim 1 wherein a basal surface of the projecting member extends over a portion of the gas orifice.
Claim 21
Dependent Claim
33 words
The apparatus as in claim 1 wherein when the platen supports the substrate, a restriction to a gas flow is formed between an edge of the substrate and the projecting member inner surface.
Claim 22
Dependent Claim
26 words
The apparatus as in claim 20 wherein the inner surface of the projecting member is uniformly spaced approximately 0.50 mm from an edge of the substrate.
Claim 23
Dependent Claim
26 words
The apparatus as in claim 1 wherein the interior region supports the substrate, and a peripheral edge of the substrate extends partially over the gas orifice.
Claim 24
Dependent Claim
24 words
The apparatus as in claim 1 wherein the projecting member includes a second gas orifice extending through the projecting member into the gas orifice.
Claim 25
Dependent Claim
23 words
The apparatus as in claim 23 wherein the second gas orifice comprises a plurality of through holes directed away from the interior region.
Claim 26
Dependent Claim
17 words
The apparatus as in claim 1 wherein the projecting member is an integral feature of the platen.
Claim 27
Dependent Claim
28 words
The apparatus as in claim 1 wherein an approximately uniform restriction to a gas flow is formed between the projecting member and a perimeter of the interior region.
Claim 28
Independent Claim
90 words
An apparatus for supporting a substrate in a process chamber of a chemical vapor deposition reactor, the substrate having a thickness and a shape, comprising: a platen mounted in the process chamber, the platen having a continuous gas groove defining a periphery of an interior surface region having a shape substantially coextensive with the shape of the substrate, the platen further having a wafer chuck and an exterior region surrounding and separated from the interior surface region by the gas groove; and a flow restrictor disposed in the gas groove.
Claim 29
Independent Claim
90 words
An apparatus for supporting a substrate in a process chamber of a chemical vapor deposition reactor, the substrate having a thickness and a shape, comprising: a platen mounted in the process chamber, the platen having a continuous gas groove defining a periphery of an interior surface region having a shape substantially coextensive with the shape of the substrate, the platen further having a wafer chuck and an exterior region surrounding and separated from the interior surface region by the gas groove; and a flow restrictor disposed in the gas groove.
Claim 30
Dependent Claim
18 words
The apparatus as in claim 27 wherein the flow restrictor is a ring disposed in the gas groove.
Claim 31
Dependent Claim
14 words
The apparatus as in claim 27 wherein the wafer chuck is a vacuum chuck.
Claim 32
Dependent Claim
63 words
The apparatus as in claim 27 further comprising: a projecting member having an inner surface surrounding a volume, the volume being peripherally coextensive with the interior surface region, the projecting member extending from the exterior region to at least the thickness of the substrate, and the inner surface of the projecting member being approximately uniformly spaced apart from a periphery of the volume.
Claim 33
Dependent Claim
52 words
The apparatus as in claim 27 wherein the flow restrictor comprises an insert attached to a first side of the gas groove proximate to the interior surface region, and an approximately uniform space separates the insert from a second side of the gas groove, the first and second sides facing each other.
Claim 34
Independent Claim
115 words
An apparatus for supporting a substrate having a shape in a process chamber of a chemical vapor deposition reactor, comprising: a platen disposed in the process chamber, the platen having a surface of a shape substantially coextensive with the shape of the substrate for contacting a backside of the substrate; a member disposed in the process chamber such that an inner wall thereof surrounds a volume peripherally coextensive with the surface with an approximately uniform space between the inner wall and a periphery of the volume normal to the surface, wherein the space is in substantially uniform communication with a volume overlying the surface and member; and a gas source in communication with the space.
Claim 35
Independent Claim
115 words
An apparatus for supporting a substrate having a shape in a process chamber of a chemical vapor deposition reactor, comprising: a platen disposed in the process chamber, the platen having a surface of a shape substantially coextensive with the shape of the substrate for contacting a backside of the substrate; a member disposed in the process chamber such that an inner wall thereof surrounds a volume peripherally coextensive with the surface with an approximately uniform space between the inner wall and a periphery of the volume normal to the surface, wherein the space is in substantially uniform communication with a volume overlying the surface and member; and a gas source in communication with the space.
Claim 36
Dependent Claim
21 words
The apparatus as in claim 32 wherein the member includes a gas orifice extending through the member to the gas source.
Claim 37
Dependent Claim
15 words
The apparatus as in claim 32 wherein the inner surface is a substantially vertical surface.
Claim 38
Dependent Claim
113 words
A chemical vapor deposition system for processing a wafer comprising: a process chamber; a platen disposed in the process chamber, the platen having a gas orifice defining a periphery of an interior surface region, the interior surface region having a shape substantially coextensive with the shape of the wafer, and the platen further having an exterior region surrounding the interior surface region; and a projecting member having an inner surface surrounding a volume peripherally coextensive with the interior surface region, the projecting member extending from the exterior region, and the inner surface of the projecting member being approximately uniformly spaced apart from a periphery of the volume normal to the interior surface region.
Claim 39
Dependent Claim
113 words
A chemical vapor deposition system for processing a wafer comprising: a process chamber; a platen disposed in the process chamber, the platen having a gas orifice defining a periphery of an interior surface region, the interior surface region having a shape substantially coextensive with the shape of the wafer, and the platen further having an exterior region surrounding the interior surface region; and a projecting member having an inner surface surrounding a volume peripherally coextensive with the interior surface region, the projecting member extending from the exterior region, and the inner surface of the projecting member being approximately uniformly spaced apart from a periphery of the volume normal to the interior surface region.
Claim 40
Dependent Claim
33 words
The chemical vapor deposition system as in claim 35 wherein the projecting member comprises a raised portion of the platen and the projecting member extends to at least a thickness of the wafer.
Claim 41
Dependent Claim
18 words
The chemical vapor deposition system as in claim 35 wherein the gas orifice is an annular gas groove.
Claim 42
Dependent Claim
45 words
The chemical vapor deposition system as in claim 35 wherein the gas orifice is an annular groove, and an insert is fixed against a wall of the gas groove with an approximately uniform space separating the other wall of the gas groove from the insert.
Claim 43
Dependent Claim
38 words
The chemical vapor deposition system as in claim 38 wherein the insert has a thickness and the uniform space has a width such that the thickness of the insert is 10 times the width of the uniform space.
Claim 44
Dependent Claim
14 words
The chemical vapor deposition system as in claim 35 wherein the platen is alumina.
Claim 45
Dependent Claim
45 words
The chemical vapor deposition system as in claim 35, the platen further comprising: a vacuum chuck disposed in the interior region of the platen to secure the wafer to the platen, wherein a backside of the wafer is in substantially full contact with the platen.
Claim 46
Dependent Claim
130 words
A chemical vapor deposition apparatus for processing a wafer in a process chamber, the process chamber having an ambient, comprising: means for supporting the wafer, the wafer being supported on a region of the means for supporting, the region having a shape substantially coextensive with a shape of the wafer for substantially fully contacting a backside of the wafer; means for securing the wafer to the means for supporting; means for introducing deposition control gas into a space surrounding an edge of the wafer, the deposition control gas when introduced having a pressure; and means for surrounding the space to equalize the deposition control gas pressure in the space when the deposition control gas is introduced by the means for introducing, the means for surrounding being separated from the wafer.
Claim 47
Dependent Claim
130 words
A chemical vapor deposition apparatus for processing a wafer in a process chamber, the process chamber having an ambient, comprising: means for supporting the wafer, the wafer being supported on a region of the means for supporting, the region having a shape substantially coextensive with a shape of the wafer for substantially fully contacting a backside of the wafer; means for securing the wafer to the means for supporting; means for introducing deposition control gas into a space surrounding an edge of the wafer, the deposition control gas when introduced having a pressure; and means for surrounding the space to equalize the deposition control gas pressure in the space when the deposition control gas is introduced by the means for introducing, the means for surrounding being separated from the wafer.
Claim 48
Dependent Claim
16 words
The chemical vapor deposition apparatus as in claim 42 wherein the supporting means includes a platen.
Claim 49
Dependent Claim
28 words
The chemical vapor deposition apparatus as in claim 42 wherein the means for introducing deposition control gas includes a gas groove surrounding the region of the supporting means.
Claim 50
Dependent Claim
24 words
The chemical vapor deposition apparatus as in claim 42 wherein the means for surrounding is a ring removably coupled to the means for supporting.
Claim 51
Dependent Claim
21 words
The chemical vapor deposition apparatus as in claim 45 wherein the means for supporting and the means for surrounding are aluminum.
Claim 52
Dependent Claim
35 words
The chemical vapor deposition apparatus as in claim 42 wherein the means for surrounding includes a gas orifice extending through the means for surrounding from the means for introducing and directed away from the wafer.
References Cited (Backward Citations)
US3809050A
Cited
US4682566A
Cited
US4261762A
Cited
US4743570A
Cited
WO1982001482A1
Cited
JPS5785235A
Cited
US4512391A
Cited
US4457359A
Cited
US4508161A
Cited
US4523984A
Cited
JPS593945A
Cited
US4575408A
Cited
US4466872A
Cited
US4738748A
Cited
US4523985A
Cited
JPS60136314A
Cited
FR2559953A1
Cited
GB2154793A
Cited
US4603466A
Cited
US4535834A
Cited
US4567938A
Cited
US4527620A
Cited
FR2566682A1
Cited
US4709655A
Cited
NL8600059A
Cited
US4767641A
Cited
US4724621A
Cited
US4687682A
Cited
US4817558A
Cited
DE3633386A1
Cited
US5000113A
Cited
US4960488A
Cited
EP0291181A2
Cited
US4911103A
Cited
JPH01178122A
Cited
JPH01189122A
Cited
US5037262A
Cited
US4859304A
Cited
US4986215A
Cited
US4857142A
Cited
US5033407A
Cited
US5033538A
Cited
US4990374A
Cited
US5133284A
Cited
US5230741A
Cited
US5238499A
Cited
US5094885A
Cited
US5304248A
Cited
US5328722A
Cited
US5292554A
Cited
US5326725A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2000-04-14 | 2000-10-14 | 2001-04-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-04-14 | 2004-10-14 | 2005-04-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-04-14 | 2008-10-14 | 2009-04-15 | $7700.00 | Window Closed / Lapsed |