Abstract A suitable inert thermal gas such as argon is introduced onto the backside of wafers being processed in a CVD reactor during the deposition of tungsten or other metals and silicides, to avoid deposition of material on the backside of the wafers being processed. Each process station includes a gas dispersion head disposed over a platen. The platen has a circular depresssion for receiving a wafer, and an annular groove provided in the floor of the depression, near the wall thereof. Heated and pressurized backside gas is introduced into the groove so that the wafer is maintained in a position above the floor of the depression but still within it. In this manner, backside gas vents from beneath the edge of the wafer on the platen and prevents the process gases from contacting the wafer in a transfer region above the platen, so that the wafer can be transported to or from the platen with a suitable wafer transfer mechanism. One suitable transfer mechanism is a multi-armed spindle, the arms being respective pairs of tines. Another suitable transfer mechanism is a removable structure in which the platens are provided with respective heaters, and the platen-heater assemblies are supported by respective tubes from a central support block. Gas and electrical power are furnished to the platen-heater assemblies from the central support block.
An apparatus for supporting and transporting a substrate in a process chamber, comprising: a base; a platen mounted on said base, said platen having a substrate retainer for retaining said substrate over a surface portion of said platen, said substrate retainer being ineffective for sealing an edge of a substrate to be processed against said platen surface portion; a wafer transport mechanism having an arm, said arm being selectively movable into a transfer region above said platen surface portion and into a space remote from said platen; a gas disperser provided in said platen surface portion; and a gas line integral with said gas disperser and extending through said platen; wherein said gas disperser functions to levitate a substrate in said transfer region upon the introduction of a gas into said gas line.
Claim 2
Independent Claim
133 words
An apparatus for supporting and transporting a substrate in a process chamber, comprising: a base; a platen mounted on said base, said platen having a substrate retainer for retaining said substrate over a surface portion of said platen, said substrate retainer being ineffective for sealing an edge of a substrate to be processed against said platen surface portion; a wafer transport mechanism having an arm, said arm being selectively movable into a transfer region above said platen surface portion and into a space remote from said platen; a gas disperser provided in said platen surface portion; and a gas line integral with said gas disperser and extending through said platen; wherein said gas disperser functions to levitate a substrate in said transfer region upon the introduction of a gas into said gas line.
Claim 3
Dependent Claim
16 words
An apparatus as in claim 1 further comprising a gas source connected to said gas line.
Claim 4
Dependent Claim
20 words
An apparatus as in claim 1, wherein the arm of said substrate transfer mechanism terminates in at least one tine.
Claim 5
Dependent Claim
28 words
An apparatus as in claim 1, wherein the arm of said substrate transfer mechanism terminates in two narrow tines, and tines being spaced apart for supporting a substrate.
Claim 6
Dependent Claim
11 words
An apparatus as in claim 4, wherein said tines are perforated.