Patent US5598031A successfully refreshed from Google Patents.
US5598031A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Electrically and thermally enhanced package using a separate silicon substrate
Assignee: Adeia Semiconductor Technologies LLC
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Filing: 1994-10-25
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Granted: 1997-01-28
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Expires: 2014-10-25
Abstract
Abstract An integrated-circuit package assembly includes a separate silicon substrate to which an integrated-circuit die is fixed. The separate silicon substrate serves as a heat spreader for the integrated-circuit die. The separate silicon substrate to which the integrated-circuit die is fixed is packaged in either a molded package body or a cavity-type package body. For the molded package body, the package body is molded around a leadframe, the integrated-circuit die, and the separate silicon substrate to which the integrated-circuit die is fixed. For a molded package body, the leadframe has bonding fingers formed at the inward ends thereof which are attached to the separate silicon substrate or the lead frame may have a die-attach pad to which is fixed the separate silicon substrate. For the cavity-type package, the package body includes a mounting surface formed adjacent to a cavity formed therein and the mounting surface has the separate silicon substrate fixed to the top surface thereof. The cavity-type body is formed of a ceramic material or as a multi-layer printed-circuit board. One or more interposer areas are formed on the top surface of the silicon substrate for attachment of connection wires from the integrated-circuit die or the leadframe. A portion of the interposer can extend between the integrated circuit die and the top surface of the silicon substrate to accommodate integrated-circuit dies of various sizes. The interposer includes a layer of oxide formed on the surface of the silicon substrate, which layer of oxide is covered with a layer of conductive material.
Inventors
- 👤 Richard L. Groover
- 👤 William K. Shu
- 👤 Sang S. Lee
- 👤 George Fujimoto
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 13:31
CPC Classifications
H; H10; H10W; H10W40/00; H10W40/70; H10W40/77; H10W40/778; H10W70/00; H10W70/40; H10W70/464; H10W70/468; H10W76/00; H10W76/10; H10W76/12; H10W76/15; H10W76/157; H10W76/40; H10W70/60; H10W70/67; H10W70/68; H10W70/682; H10W70/685; H10W72/00; H10W72/071; H10W72/073; H10W72/07351; H10W72/07353; H10W72/075; H10W72/07551; H10W72/07554; H10W72/30; H10W72/331; H10W72/334; H10W72/50; H10W72/541; H10W72/547; H10W72/5473; H10W72/851; H10W72/874; H10W72/884; H10W72/90; H10W72/931; H10W90/00; H10W90/701; H10W90/731; H10W90/734; H10W90/751; H10W90/754; H10W90/756
Claims Analysis
Total Claims: 44
Claim 1
Independent Claim
172 words
An integrated-circuit package assembly, comprising: an integrated-circuit die; a separate silicon substrate, of silicon wafer material from a silicon wafer, having a top surface and a bottom surface, said integrated-circuit die being fixed to the top surface of the separate silicon substrate, said separate silicon substrate serving as a heat spreader for the integrated-circuit die; a package body containing the separate silicon substrate with the integrated-circuit die fixed to the separate silicon substrate, said package body being a molded package body which is formed around a leadframe, said integrated-circuit die and said separate silicon substrate to which the integrated-circuit die is fixed; said leadframe having leads extending inwardly towards a central region of said leadframe, said leads having bonding fingers formed at the inward ends thereof wherein said separate silicon substrate has lateral dimensions greater than the lateral dimensions of said integrated-circuit die and wherein at least one interposer area is formed on said top surface of said silicon substrate for attachment of connection wires from said integrated-circuit die or said leadframe.
Claim 2
Dependent Claim
172 words
An integrated-circuit package assembly, comprising: an integrated-circuit die; a separate silicon substrate, of silicon wafer material from a silicon wafer, having a top surface and a bottom surface, said integrated-circuit die being fixed to the top surface of the separate silicon substrate, said separate silicon substrate serving as a heat spreader for the integrated-circuit die; a package body containing the separate silicon substrate with the integrated-circuit die fixed to the separate silicon substrate, said package body being a molded package body which is formed around a leadframe, said integrated-circuit die and said separate silicon substrate to which the integrated-circuit die is fixed; said leadframe having leads extending inwardly towards a central region of said leadframe, said leads having bonding fingers formed at the inward ends thereof wherein said separate silicon substrate has lateral dimensions greater than the lateral dimensions of said integrated-circuit die and wherein at least one interposer area is formed on said top surface of said silicon substrate for attachment of connection wires from said integrated-circuit die or said leadframe.
Claim 3
Dependent Claim
19 words
The integrated-circuit package assembly of claim 1 further comprising said bonding fingers being attached to said separate silicon substrate.
Claim 4
Dependent Claim
24 words
The integrated-circuit package assembly of claim 2, wherein said lead frame has a die-attach pad portion to which is fixed said separate silicon substrate.
Claim 5
Dependent Claim
41 words
The integrated-circuit package assembly of claim 1 wherein a portion of said at least one interposer is formed on said top surface of said separate silicon substrate extends between said integrated circuit die and the top surface of said silicon substrate.
Claim 6
Dependent Claim
52 words
The integrated-circuit package assembly of claim 1 wherein a portion of the at least one interposer which is formed on the top surface of the silicon substrate extends between the bottom surface of the integrated circuit die and the top surface of the silicon substrate to accommodate integrated-circuit dies of various sizes.
Claim 7
Dependent Claim
41 words
The integrated-circuit package assembly of claim 1, wherein said at least one interposer is formed as a layer of oxide formed on said top surface of said silicon substrate, which layer of oxide is covered with a layer of conductive material.
Claim 8
Dependent Claim
40 words
The integrated-circuit package assembly of claim 6, wherein said at least one interposer is formed as a layer of oxide formed on said top surface of said silicon substrate, over which another layer of oxide and conductive material is formed.
Claim 9
Dependent Claim
46 words
The integrated-circuit package assembly of claim 1 wherein said package body is a cavity-type package body having a cavity formed therein, wherein said package body includes a mounting surface formed adjacent to said cavity, and wherein said mounting surface has said separate silicon substrate fixed thereto.
Claim 10
Dependent Claim
36 words
The integrated-circuit package assembly of claim 8 wherein at least one interposer is formed on said top surface of said separate silicon substrate for connection of wires from said integrated-circuit die or said cavity-type package body.
Claim 11
Dependent Claim
47 words
The integrated-circuit package assembly of claim 9 wherein a portion of said at least one interposer is formed on said top surface of said silicon substrate extends between said integrated circuit die and said top surface of said silicon substrate to accommodate integrated-circuit dies of various sizes.
Claim 12
Dependent Claim
13 words
The integrated-circuit package assembly of claim 9 wherein said connections are wire-bonded wires.
Claim 13
Dependent Claim
40 words
The integrated-circuit package assembly of claim 9 wherein said at least one interposer is formed as a layer of oxide formed on said surface of said silicon substrate, which layer of oxide is covered with a layer of conductive material.
Claim 14
Dependent Claim
40 words
The integrated-circuit package assembly of claim 12, wherein said at least one interposer is formed as a layer of oxide formed on said top surface of said silicon substrate, over which alternate layers of oxide and conductive material are formed.
Claim 15
Dependent Claim
17 words
The integrated-circuit package assembly of claim 12, wherein said package body is formed of a ceramic material.
Claim 16
Dependent Claim
18 words
The integrated-circuit package assembly of claim 12, wherein said package body is formed as a printed-circuit board structure.
Claim 17
Dependent Claim
156 words
An integrated-circuit package assembly, comprising: an integrated-circuit die; a leadframe having leads extending inwardly towards a central region of the leadframe, said leads having bonding fingers formed at the inward ends thereof; a separate silicon substrate, of silicon wafer material from a silicon wafer, having a top surface and a bottom surface, said integrated-circuit die being mounted on the top surface of the separate silicon substrate, said separate silicon substrate serving as a heat spreader for the integrated-circuit die; a molded package body which contains the separate silicon substrate with the integrated-circuit die mounted thereto and which is formed around a leadframe, the integrated-circuit die and the separate silicon substrate; wherein said separate silicon substrate has lateral dimensions greater than the lateral dimensions of said integrated-circuit die and wherein at least one interposer area is formed on said top surface of said silicon substrate for attachment of connection wires from said integrated-circuit die or said leadframe.
Claim 18
Dependent Claim
156 words
An integrated-circuit package assembly, comprising: an integrated-circuit die; a leadframe having leads extending inwardly towards a central region of the leadframe, said leads having bonding fingers formed at the inward ends thereof; a separate silicon substrate, of silicon wafer material from a silicon wafer, having a top surface and a bottom surface, said integrated-circuit die being mounted on the top surface of the separate silicon substrate, said separate silicon substrate serving as a heat spreader for the integrated-circuit die; a molded package body which contains the separate silicon substrate with the integrated-circuit die mounted thereto and which is formed around a leadframe, the integrated-circuit die and the separate silicon substrate; wherein said separate silicon substrate has lateral dimensions greater than the lateral dimensions of said integrated-circuit die and wherein at least one interposer area is formed on said top surface of said silicon substrate for attachment of connection wires from said integrated-circuit die or said leadframe.
Claim 19
Dependent Claim
41 words
The integrated-circuit package assembly of claim 16 wherein a portion of said at least one interposer is formed on said top surface of said separate silicon substrate extends between said integrated circuit die and said top surface of said silicon substrate.
Claim 20
Dependent Claim
40 words
The integrated-circuit package assembly of claim 16, wherein said at least one interposer is formed as a layer of oxide formed on said surface of said silicon substrate, which layer of oxide is covered with a layer of conductive material.
Claim 21
Dependent Claim
115 words
An integrated-circuit package assembly, comprising: an integrated-circuit die; a separate silicon substrate, of silicon wafer material from a silicon wafer, having a top surface and a bottom surface, said integrated-circuit die being mounted on the top surface of the separate silicon substrate, said separate silicon substrate serving as a heat spreader for the integrated-circuit die; a package body having a cavity formed therein with a mounting surface formed in the package body adjacent to the cavity, wherein the mounting surface has the separate silicon substrate mounted thereto wherein at least one interposer is formed on said top surface of said silicon substrate for connections of wires from said integrated-circuit die or said cavity-type package body.
Claim 22
Dependent Claim
115 words
An integrated-circuit package assembly, comprising: an integrated-circuit die; a separate silicon substrate, of silicon wafer material from a silicon wafer, having a top surface and a bottom surface, said integrated-circuit die being mounted on the top surface of the separate silicon substrate, said separate silicon substrate serving as a heat spreader for the integrated-circuit die; a package body having a cavity formed therein with a mounting surface formed in the package body adjacent to the cavity, wherein the mounting surface has the separate silicon substrate mounted thereto wherein at least one interposer is formed on said top surface of said silicon substrate for connections of wires from said integrated-circuit die or said cavity-type package body.
Claim 23
Dependent Claim
40 words
The integrated-circuit package assembly of claim 19 wherein a portion of said at least one interposer is formed on said top surface of said silicon substrate extends between said integrated circuit die and said top surface of said silicon substrate.
Claim 24
Dependent Claim
41 words
The integrated-circuit package assembly of claim 19 wherein said at least one interposer is formed as a layer of oxide formed on said top surface of said silicon substrate, which layer of oxide is covered with a layer of conductive material.
Claim 25
Dependent Claim
17 words
The integrated-circuit package assembly of claim 19, wherein said package body is formed of a ceramic material.
Claim 26
Dependent Claim
18 words
The integrated-circuit package assembly of claim 19, wherein said package body is formed as a printed-circuit board structure.
Claim 27
Dependent Claim
100 words
An integrated-circuit package assembly, comprising: an integrated-circuit die; a separate silicon substrate, of silicon wafer material from a silicon wafer, having a top surface and a bottom surface, said integrated-circuit die being fixed to the top surface of the separate silicon substrate, said separate silicon substrate serving as a heat spreader for the integrated-circuit die; a package body containing the separate silicon substrate with the integrated-circuit die fixed to the separate silicon substrate; and at least one conductive interposer area formed on the top surface of the separate silicon substrate for attachment of connection wires from the integrated circuit die.
Claim 28
Dependent Claim
100 words
An integrated-circuit package assembly, comprising: an integrated-circuit die; a separate silicon substrate, of silicon wafer material from a silicon wafer, having a top surface and a bottom surface, said integrated-circuit die being fixed to the top surface of the separate silicon substrate, said separate silicon substrate serving as a heat spreader for the integrated-circuit die; a package body containing the separate silicon substrate with the integrated-circuit die fixed to the separate silicon substrate; and at least one conductive interposer area formed on the top surface of the separate silicon substrate for attachment of connection wires from the integrated circuit die.
Claim 29
Dependent Claim
62 words
The integrated-circuit package assembly of claim 24 further comprising: the package body being a molded package body which is formed around a leadframe, the integrated-circuit die and the separate silicon substrate to which the integrated-circuit die is fixed; said leadframe having leads extending inwardly towards a central region of the leadframe, said leads having bonding fingers formed at the inward ends thereof.
Claim 30
Dependent Claim
19 words
The integrated-circuit package assembly of claim 25 further comprising the bonding fingers being attached to the separate silicon substrate.
Claim 31
Dependent Claim
24 words
The integrated-circuit package assembly of claim 26, wherein the lead frame has a die-attach pad portion to which is fixed the separate silicon substrate.
Claim 32
Dependent Claim
24 words
The integrated-circuit package assembly of claim 25, wherein the separate silicon substrate has lateral dimensions greater than the lateral dimensions of the integrated-circuit die.
Claim 33
Dependent Claim
40 words
The integrated-circuit package assembly of claim 28 wherein a portion of the at least one interposer formed on the top surface of the separate silicon substrate extends between the integrated circuit die and the top surface of the silicon substrate.
Claim 34
Dependent Claim
52 words
The integrated-circuit package assembly of claim 28 wherein a portion of the at least one interposer which is formed on the top surface of the silicon substrate extends between the bottom surface of the integrated circuit die and the top surface of the silicon substrate to accommodate integrated-circuit dies of various sizes.
Claim 35
Dependent Claim
40 words
The integrated-circuit package assembly of claim 24, wherein the at least one interposer is formed as a layer of oxide formed on the surface of the silicon substrate, which layer of oxide is covered with a layer of conductive material.
Claim 36
Dependent Claim
39 words
The integrated-circuit package assembly of claim 31, wherein the at least one interposer is formed as a layer of oxide formed on the surface of the silicon substrate, over which another layer of oxide and conductive material is formed.
Claim 37
Dependent Claim
50 words
The integrated-circuit package assembly of claim 24 wherein the package body is a cavity-type package body having a cavity formed therein, wherein the package body includes a mounting surface formed adjacent to the cavity, and wherein the mounting surface has the separate silicon substrate fixed to the top surface thereof.
Claim 38
Dependent Claim
36 words
The integrated-circuit package assembly of claim 33 wherein at least one interposer is formed on the top surface of the separate silicon substrate for connection of wires from the integrated-circuit die or the cavity-type package body.
Claim 39
Dependent Claim
47 words
The integrated-circuit package assembly of claim 34 wherein a portion of the at least one interposer is formed on the top surface of the silicon substrate extends between the integrated circuit die and the top surface of the silicon substrate to accommodate integrated-circuit dies of various sizes.
Claim 40
Dependent Claim
13 words
The integrated-circuit package assembly of claim 34 wherein the connections are wire-bonded wires.
Claim 41
Dependent Claim
40 words
The integrated-circuit package assembly of claim 34 wherein the at least one interposer is formed as a layer of oxide formed on the surface of the silicon substrate, which layer of oxide is covered with a layer of conductive material.
Claim 42
Dependent Claim
39 words
The integrated-circuit package assembly of claim 37, wherein the at least one interposer is formed as a layer of oxide formed on the surface of the silicon substrate, over which alternate layers of oxide and conductive material are formed.
Claim 43
Dependent Claim
17 words
The integrated-circuit package assembly of claim 37, wherein the package body is formed of a ceramic material.
Claim 44
Dependent Claim
18 words
The integrated-circuit package assembly of claim 37, wherein the package body is formed as a printed-circuit board structure.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2000-01-28 | 2000-07-29 | 2001-01-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-01-28 | 2004-07-29 | 2005-01-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-01-28 | 2008-07-29 | 2009-01-28 | $7700.00 | Window Closed / Lapsed |